ST STTH102 User Manual
Main product characteristics
STTH102
High efficiency ultrafast diode
I
F(AV)
V
RRM
T
(max) 175° C
j
(max) 0.78 V
V
F
(max) 20 ns
t
rr
1 A
200 V
Features and benefits
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
Description
The STTH102, which is using ST’s new 200 V
planar technology, is specially suited for switching
mode base drive and transistor circuits. The
device is also intended for use as a free wheeling
diode in power supplies and other power
switching applications.
A
K
SMA
(JEDEC DO-214AC)
STTH102A
Order codes
Part Number Marking
STTH102A U12
STTH102 STTH102
STTH102RL STTH102
A
K
DO-41
STTH102
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
T
T
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
November 2006 Rev 5 1/7
Repetitive peak reverse voltage 200 V
Average forward current
Surge non repetitive forward
current
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature 175 °C
j
SMA TL = 148° C δ = 0.5
DO-41 T
SMA
DO-41 50
= 130° C δ = 0.5
L
tp = 10 ms Sinusoidal
1A
40
A
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7
Characteristics STTH102
1 Characteristics
Table 2. Thermal resistance
Symbol Parameter Value Unit
SMA 30
R
th(j-l)
Table 3. Static Electrical Characteristics
Junction to lead
Lead length = 10 mm DO-41 50
Symbol Parameter Tests conditions Min. Typ Max. Unit
T
= 25° C
(1)
I
R
V
F
Reverse leakage current
(2)
Forward voltage drop
j
= 125° C 1 25
T
j
T
= 25° C
j
= 125° C IF = 1 A 0.68 0.78
T
j
= V
V
R
RRM
= 700 mA
I
F
(SMA)
I
= 1 A 0.97
F
1
0.90
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: t
= 380 µs, δ < 2%
p
To evaluate the conduction losses use the following equation:
P = 0.65 x I
Table 4. Dynamic electrical characteristics
F(AV)
+ 0.130 I
F2(RMS)
°C/W
µA
V
Symbol Parameter Tests conditions Min Typ Max Unit
= 0.5 A Irr = 0.25 A
I
t
t
V
Reverse recovery time Tj = 25° C
rr
Forward recovery time Tj = 25° C
fr
Forward recovery voltage Tj = 25° C IF = 1 A dIF/dt = 50 A/ms 1.8 V
FP
Figure 1. Average forward power dissipation
versus average forward current
(SMA)
P (W)
F(AV)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
δ = 1
T
=tp/T
F
= 1 A
I
R
= 1 A dIF/dt = 50 A/ms
I
F
VFR = 1.1 x VFmax
12 20 ns
50 ns
Figure 2. Average forward power dissipation
versus average forward current
(DO-41)
P (W)
F(AV)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
tp
0.1
0.0
0.00 0.25 0.50 0.75 1.00 1.25
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
2/7
STTH102 Characteristics
Figure 3. Average forward current versus
ambient temperature (δ = 0.5) (SMA)
I (A)
F(AV)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
T (°C)
R =120°C/W
th(j-a)
amb
R=R
th(j-a) th(j-I)
Figure 5. Relative variation of thermal
impedance junction to ambient
versus pulse duration (epoxy
printed circuit board, e
(Cu)
= 35 µm,
recommended pad layout) (SMA)
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.2
0.1
Single pulse
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t (s)
p
δ
=tp/T
T
tp
Figure 7. Forward voltage drop versus
forward current
I (A)
FM
100.0
T=125°C
j
(maximum values)
10.0
1.0
T=125°C
j
(typical values)
T=25°C
j
(maximum values)
Figure 4. Average forward current versus
ambient temperature (δ = 0.5)
(DO-41)
I (A)
F(AV)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
T (°C)
R =110°C/W
th(j-a)
amb
R=R
th(j-a) th(j-I)
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration (DO-41)
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
δ
= 0.5
0.5
0.4
0.3
δ
= 0.2
0.2
δ
= 0.1
0.1
Single pulse
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t (s)
p
δ
=tp/T
T
tp
Figure 8. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
100
10
F=1MHz
V =30mV
OSC RMS
T=25°C
j
V (V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
FM
V (V)
1
1 10 100 1000
R
3/7
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