ST STTH1002C-Y User Manual
STTH1002C-Y
Automotive high efficiency ultrafast diode
Features
■ Suited for SMPS
■ Low losses
■ Low forward and reverse recovery times
■ High junction temperature
■ Low leakage current
■ AEC-Q101 qualified
Description
Dual center tap rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in DPAK and D
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection for
automotive applications.
2
PAK, this device is
A1
A2
K
A2
K
A1
DPAK
STTH1002CBY
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
(max) 175 °C
T
j
V
(typ) 0.78 V
F
(typ) 20 ns
t
rr
K
K
K
A2
A1
D2PAK
STTH1002CGY
Up to 2 x 8 A
200 V
November 2011 Doc ID 17536 Rev 2 1/9
www.st.com
9
Characteristics STTH1002C-Y
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
T
Table 3. Thermal parameters
Repetitive peak reverse voltage 200 V
RRM
2
PA K
Forward rms current
D
DPAK 10
= 155 °C Per diode 5
T
c
T
= 150 °C Per device 10
Avarage forward current δ = 0.5
Surge non repetitive forward current tp = 10 ms sinusoidal 50 A
FSM
Storage temperature range -65 to + 175 °C
stg
Operating junction temperature range -40 to + 175 °C
T
j
c
T
= 135 °C Per diode 8
c
= 125 °C Per device 16
T
c
20
Symbol Parameter Value (max) Unit
Per diode 4.0
R
R
Junction to case
th(j-c)
Coupling 1.0
th(j-c)
°C/WPer device 2.5
A
A
When the diodes 1 and 2 are used simultaneously:
Δ T
(diode1) = P(diode1) x R
j
Table 4. Static electrical characteristics (per diode)
(per diode) + P(diode2) x R
th(j-c)
th(c)
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
Reverse leakage current
R
(2)
Forward voltage drop
F
Tj = 25 °C
VR = V
= 125 °C 3 40
T
j
T
= 25 °C IF = 5 A 1.1
j
T
= 25 °C IF = 10 A 1.25
j
= 150 °C IF = 5 A 0.78 0.89
T
j
T
= 150 °C IF = 10 A 1.05
j
RRM
5
To evaluate the conduction losses use the following equation:
P = 0.73 x I
F(AV)
+ 0.032 I
F2(RMS)
µA
V
2/9 Doc ID 17536 Rev 2
STTH1002C-Y Characteristics
Table 5. Dynamic electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 1 A VR = 30 V
I
Reverse recovery time Tj = 25 °C
t
rr
F
dIF/dt = 100 A/µs
20 25 ns
Reverse recovery
I
RM
current
t
Forward recovery time Tj = 25 °C
fr
V
Forward recovery
FP
voltage
= 125 °C
T
j
T
= 25 °C IF = 5 A dIF/dt = 100 A/µs 2.4 V
j
I
= 5 A VR = 160 V
F
dIF/dt = 200 A/µs
= 5 A dIF/dt = 100 A/µs
I
F
= 1.1 x V
V
FR
Fmax
5.9 7.6 A
110 ns
Doc ID 17536 Rev 2 3/9
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