ST STS8DNH3LL User Manual
STS8DNH3LL
DUAL N-CHANNEL 30V - 0.018 Ω - 8A SO-8
LOW GATE CHARGE STripFET™ III POWER MOSFET
TYPE
V
DSS
R
DS(on)
I
D
STS8DNH3LL 30 V <0.022 Ω 8 A
■ TYPICAL R
■ OPTIMAL R
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
(on) = 0.018Ω
DS
(on) x Qg TRADE-OFF @ 4.5V
DS
DESCRIPTION
This application specific MOSFET is the Third generation
of STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor shows the
best trade-off between on-resistance and gate charge.
When used as high and low side in buck regulators, it
gives the best performance in terms of both conduction
and switching losses. This is extremely important for
motherboards where fast switching and high efficiency
are of paramount importance.
APPLICATIONS
■ SPECIFICALLY DESI GNED AND OPTIMI SED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PC
S
SO-8
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
STS8DNH3LL S8DNH3LL SO-8 TAPE & REEL
SALES TYPE MARKING PACKAGE PACKAGING
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
(•)
DM
P
tot
(•) Pulse width limited by safe operating area.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
30 V
30 V
Gate- source Voltage ± 16 V
Drain Current (conti nuo us ) at TC = 25°C
Drain Current (conti nuo us ) at TC = 100°C
8A
5A
Drain Current (pulse d) 32 A
Total Dissipation at TC = 25°C
2W
Rev.0.2
1/9June 2004
STS8DNH3LL
TAB.1 THERMAL DATA
Rthj-amb
T
T
stg
(*)
When mounted on 1 inch2 FR-4 board, 2 oz of Cu, t ≤ 10s
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
TAB.2 OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
(*)
Thermal Resistance Junction-ambient
Maximum Operating Junction Temperature
j
Storage Temperature
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
= 250 µA, VGS = 0
D
= Max Rating
V
DS
= Max Rating TC = 125°C
V
DS
= ± 16 V
V
GS
Max 62.5
150
-55 to 150
30 V
1
10
±100 nA
°C/W
°C
°C
µA
µA
TAB.3 ON
(*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= VGS ID = 250 µA
DS
V
= 10 V ID = 4 A
GS
= 4.5 V ID = 4 A
V
GS
1V
0.018
0.020
0.022
0.025
TAB.4 DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
=15 V ID=4 A
DS
V
= 25V, f = 1 MHz, VGS = 0
DS
8.5 S
857
147
20
Ω
Ω
pF
pF
pF
2/9
STS8DNH3LL
ELECTRICAL CHARACTERISTICS (continued)
TAB.5 SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 4 A
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
To tal Ga te Char ge
Gate-Source Charg e
Gate-Drain Charge
TAB.6 SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
TAB.7 SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Source-drain Curre nt
(•)
Source-drain Curre nt (pu lse d)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V
DD
=4.7 Ω VGS = 10 V
R
G
(Resistive Load, Figu re 1)
V
= 15 V ID= 8 A VGS= 4.5 V
DD
(see test circuit, Figure 2)
V
= 15 V ID = 4 A
DD
=4.7Ω, V
R
G
GS
(Resistive Load, Figu re 1)
I
= 4 A VGS = 0
SD
I
= 8 A di/dt = 100A/µs
SD
= 15 V Tj = 150°C
V
DD
(see test circuit, Figure 3)
= 10 V
12
14.5
7.0
2.5
2.3
23
8
15
5.7
0.76
10 nC
8
32
1.5 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Safe Operating Area Thermal Impedance
3/9
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