ST STRH8N10 User Manual

Features

V

DSS

100 V 6 A 0.30 Ω 22 nC

■ Fast switching

■ 100% avalanche tested

■ Hermetic package

■ 70 krad TID

■ SEE radiation hardened

I

D

R

DS(on)

Applications

■ Satellite

■ High reliability

STRH8N10

Rad-Hard N-channel 100 V, 6 A

Power MOSFET

Q

g

TO-39

Figure 1. Internal schematic diagram

Description

This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET has specifically been designed to sustain high TID and provide immunity to heavy ion effects.

Table 1. Device summary

Order code

STRH8N10N1 -

STRH8N10NG TBD ESCC flight Target

ESCC part

number

Note: Contact ST sales office for information about the specific conditions for product in die form

and for other packages.

™

process. It

Quality

level

Engineering

model

Package

TO-39 Gold 1.2 -55 to 150°C

Lead

finish

Mass

(g)

Temp. range EPPL

-

November 2011 Doc ID 010029 Rev 2 1/18

www.st.com

18

Contents STRH8N10

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

7 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2/18 Doc ID 010029 Rev 2

STRH8N10 Electrical ratings

1 Electrical ratings

(TC = 25°C unless otherwise specified)

Table 2. Absolute maximum ratings (pre-irradiation)

Symbol Parameter Value Unit

(1)

V

DS

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt

T

1. This rating is guaranteed @ TJ > 25 °C (see Figure 10: Normalized BV

2. This value is guaranteed over the full range of temperature.

3. Rated according to the Rthj-case + Rthc-s.

4. Pulse width limited by safe operating area.

5. ISD ≤ 6 A, di/dt ≤ 1060 A/µs, VDD = 80% V

Drain-source voltage (VGS = 0)

(2)

Gate-source voltage ±20 V

(3)

Drain current (continuous) at TC= 25°C 6 A

(1)

Drain current (continuous) at TC= 100°C 4.1 A

(4)

Drain current (pulsed) 24 A

(1)

Total dissipation at TC= 25°C 25 W

(5)

Peak diode recovery voltage slope 6.4 V/ns

Storage temperature -55 to 150 °C

stg

T

Max. operating junction temperature 150 °C

j

(BR)DSS

DSS

100 V

vs temperature).

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 5.0 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

I

E

AS

E

Avalanche current, repetitive or not-repetitive

AR

(pulse width limited by Tj Max)

Single pulse avalanche energy

(1)

(starting Tj=25°C, Id=Iar, Vdd=50V)

Single pulse avalanche energy

AS

(starting Tj=110°C, Id=Iar, Vdd=50V)

4A

457 mJ

134 mJ

Doc ID 010029 Rev 2 3/18

Electrical ratings STRH8N10

Table 4. Avalanche characteristics (continued)

Symbol Parameter Value Unit

Repetitive avalanche

E

AR

(Vdd = 50 V, I duty cycle = 10%)

Repetitive avalanche

E

(Vdd = 50 V, IAR = 4 A, f = 100 KHz, TJ = 110 °C,

AR

duty cycle = 10%)

1. Maximum rating value.

= 4 A, f = 100 KHz, TJ = 25 °C,

AR

4.3 mJ

1.4 mJ

4/18 Doc ID 010029 Rev 2

STRH8N10 Electrical characteristics

2 Electrical characteristics

(T

= 25°C unless otherwise specified).

CASE

2.1 Pre-irradiation

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

V

GS(th)

R

DS(on)

DSS

GSS

Zero gate voltage drain current (V

Gate body leakage current

= 0)

(V

DS

Gate threshold voltage

Static drain-source on resistance

GS

= 0)

100% BV

80% BV 80% BV

V

GS

V

GS

V

GS

V

GS

V

DS

V

DS

Dss

Dss, TC

= 20 V = -20 V = 20 V, TC = 125 °C = -20 V, TC = 125 °C

=VGS, ID = 1mA =VGS, ID = 1mA

TC = 125 °C

=VGS, ID = 1mA

V

DS

TC = -55 °C

V

= 12 V, ID = 4 A

GS

= 12 V, ID = 4 A,

V

GS

TC = 125 °C

= 125 °C

,

-100

-200

2

1.5

2.1

1mA

10

100

µA

100

200

nA

4.5

3.7 V

5.5

0.30

0.72

Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

oss

C

oss eq.

Q Q Q

R

1. This value is guaranteed over the full range of temperature.

2. This value is defined as the ratio between the Q

3. Not tested, guaranteed by process.

Input capacitance

iss

Output capacitance

(1)

Reverse transfer

rss

capacitance

Equivalent output

(1)

capacitance

Total gate charge

g

Gate-to-source charge

gs

Gate-to-drain (“Miller”)

gd

charge

(3)

Gate input resistance

G

(2)

= 25 V, f=1 MHz,

V

DS

=0V

V

GS

527

76 31

659

95 39

791 114

47

VDD = 80 V, VGS=0V 162 pF

= 50 V, ID = 4 A,

V

DD

= 12 V

V

GS

18.5 3 4

5.5

22

4

5 7

15

f=1MHz gate DC bias=0 test signal level=20mV

1.6 Ω

open drain

and the voltage value applied.

oss

Doc ID 010029 Rev 2 5/18

pF pF pF

nC nC nC

Electrical characteristics STRH8N10

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time

r

Turn-off-delay time

t

Fall time

f

Table 8. Source drain diode

= 50 V, ID = 4 A,

V

DD

RG = 4.7 Ω, VGS = 12 V

(1)

6 4

13

3

10.5

21.5

5.5

15 17 30

8

Symbol Parameter Test conditions Min. Typ. Max Unit

I

SDM

V

SD

t

rr

Q

I

RRM

t

rr

Q

I

RRM

1. Refer to the Figure 16: Source drain diode.

2. Pulse width limited by safe operating area.

3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

4. Not tested in production, guaranteed by process.

Source-drain current

SD

(2)

Source-drain current (pulsed)

(3)

Forward on voltage

(4)

Reverse recovery time

(4)

Reverse recovery charge

rr

(4)

Reverse recovery current

(4)

Reverse recovery time

(4)

Reverse recovery charge

rr

(4)

Reverse recovery current

= 8 A, VGS = 0

I

SD

= 8 A, VGS = 0,

I

SD

TC = 125 °C

= 8 A, di/dt = 100

I

SD

A/µs

= 17 V, Tj = 25 °C

V

DD

= 8 A,

I

SD

di/dt = 100 A/µs, VDD= 17 V, Tj = 150 °C

196 245

1.2 10

282 352

1.7

10.5

6

24

1.5

1.275

294 ns

422 ns

ns ns ns ns

A A

V

µC

A

µC

A

6/18 Doc ID 010029 Rev 2