ST STRH40N6 User Manual

STRH40N6

Rad-Hard P-channel 60 V, 30 A Power MOSFET

Features

VBDSS	ID	RDS(on)	Qg
60 V	30 A	36 mOhm	43 nC

■Fast switching

■100% avalanche tested

■Hermetic package

■70 krad TID

■SEE radiation hardened

Applications

■Satellite

■High reliability

Description

This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects.

Datasheet — production data

SMD.5

Figure 1. Internal schematic diagram

	Table 1.	Device summary
	Part numbers		ESCC part	Quality	Package	Lead	Mass (g)	Temp. range	EPPL
			number	level		finish
	STRH40N6S1		-	Engineering					-
				model	SMD.5	Gold	2	-55 to 150°C
	STRH40N6SG		TBD	ESCC flight					Target
	Note:	Contact ST sales office for information about the specific conditions for tape and reel,
		product in die form and other packages.

March 2012

Doc ID 18351 Rev 4

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This is information on a product in full production.

www.st.com

Contents	STRH40N6

Contents

1	Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. 3
2	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	5
3	Radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	7
4	Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	10
5	Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	12
6	Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	13
7	Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	14
8	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	15

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STRH40N6	Electrical ratings

1 Electrical ratings

(TC= 25 °C unless otherwise specified)
Table 2.		Absolute maximum ratings (pre-irradiation)
Symbol		Parameter				Value	Unit
	(1)	Drain-source voltage (VGS = 0)				60	V
VDS
	(2)	Gate-source voltage				±20	V
VGS
I	(3)	Drain current (continuous) at T	C	= 25°C		30	A
	D
I	(3)	Drain current (continuous) at T	C	= 100°C		19	A
	D
	(4)	Drain current (pulsed)				120	A
IDM
	(5)	Total dissipation at TC= 25°C				75	W
PTOT
	(3)	Total dissipation at TC= 25°C				66	W
PTOT
dv/dt (6)		Peak diode recovery voltage slope				2.5	V/ns
Tstg		Storage temperature				-55 to 150	°C
	Tj	Max. operating junction temperature				150	°C

1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature).

2.This value is guaranteed over the full range of temperature.

3.Rated according to the Rthj-case + Rthc-s

4.Pulse width limited by safe operating area

5.Rated according to the Rthj-case

6.ISD ≤ 40 A, di/dt ≤ 1060 A/µs, VDD = 80 %V(BR)DSS

Table 3.	Thermal data
Symbol	Parameter	Value	Unit
Rthj-case	Thermal resistance junction-case	1.67	°C/W
Rthc-s	Case-to-sink	0.21	°C/W
Rthj-amb(1)	Thermal resistance junction -amb	50	°C/W
1. When mounted on heat sink of 300 mm², t < 10 sec

	Table 4.	Avalanche characteristics
	Symbol	Parameter	Value	Unit
	IAR	Avalanche current, repetitive or not-repetitive	15	A
		(pulse width limited by Tj max)
	EAS(1)	Single pulse avalanche energy	354
		(starting Tj= 25°C, Id= 20 A, Vdd= 40 V)
				mJ
	EAS	Single pulse avalanche energy	105
		(starting Tj= 110 °C, Id= 20 A, Vdd= 40 V)

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Electrical ratings				STRH40N6
	Table 4.	Avalanche characteristics (continued)
	Symbol	Parameter	Value		Unit
		Repetitive avalanche
		(Vdd = 50 V, IAR = 17.5 A, f = 10 KHz,	20
		TJ = 25 °C, duty cycle = 50%)
		Repetitive avalanche
	EAR	(Vdd = 40 V, IAR = 15 A, f = 100 KHz,	1.3		mJ
		TJ = 25 °C, duty cycle = 10%)
		Repetitive avalanche
		(Vdd = 40 V, IAR = 15 A, f = 100 KHz,	0.4
		TJ = 110 °C, duty cycle = 10%)

1. Maximum rating value.

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STRH40N6	Electrical characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified).

Pre-irradiation

Table 5.	Pre-irradiation on/off states
Symbol	Parameter	Test conditions	Min.	Typ.		Max.	Unit
IDSS	Zero gate voltage drain	80% BVDss				10	µA
	current (VGS = 0)
IGSS	Gate body leakage current	VGS = 20 V				100	nA
	(VDS = 0)	VGS = -20 V	-100
(1)	Drain-to-source breakdown	VGS = 0, ID = 1 mA
BVDSS	voltage		60				V
VGS(th)	Gate threshold voltage	VDS = VGS, ID = 1 mA	2			4.5	V
RDS(on)	Static drain-source on	VGS = 12 V		0.036		0.045	Ω
	resistance	ID = 15 A
1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature).

	Table 6.	Pre-irradiation dynamic
	Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
	Ciss	Input capacitance		1312	1640	1968	pF
		Output capacitance	VGS = 0, VDS = 25 V,
	(1)			281	351	421	pF
	Coss	Reverse transfer	f=1MHz
	Crss			111	139	167	pF
		capacitance
	Qg	Total gate charge		35	43	52	nC
		Gate-to-source charge	VDD = 30 V, ID = 40 A,
	Qgs			9	11	13	nC
		Gate-to-drain (“Miller”)	VGS=12 V
	Qgd			12	15	18	nC
		charge
			f=1MHz Gate DC Bias=0
	R (2)	Gate input resistance	Test signal level=20 mV	1.04	1.3	1.56	Ω
	G
			open drain

1.This value is guaranteed over the full range of temperature.

2.Not tested, guaranteed by process.

Table 7.	Pre-irradiation switching times
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on delay time		13	17	21	ns
tr	Rise time	VDD = 30 V, ID = 20 A,	26	59	92	ns
td(off)	Turn-off-delay time	RG = 4.7 Ω, VGS = 12 V	18	33	48	ns
tf	Fall time		7	11.5	16	ns

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