Datasheet STRH100N10 Datasheet (ST)

Rad-Hard 100 V, 48 A N-channel Power MOSFET

Features

V

BDSS

100 V 48 A 30 mOhm 135 nC

■ Fast switching

■ 100% avalanche tested

■ Hermetic package

■ 70 krad TID

■ SEE radiation hardened

I

D

R

DS(on)

STRH100N10

Q

g

3

2

TO-254AA

1

Applications

■ Satellite

■ High reliability

Figure 1. Internal schematic diagram

Description

This N-channel Power MOSFET is developed with
STMicroelectronics unique STripFET™ process.
It has specifically been designed to sustain high
TID and provide immunity to heavy ion effects.
This Power MOSFET is fully ESCC qualified.

Table 1. Device summary

Part number

ESCC part

number

STRH100N10HY1 -

STRH100N10HY01 5205/021/01 ESCC flight Yes

Quality

level

Engineering

model

Package

Lead

finish

Mass (g) Temp. range EPPL

TO-254AA Gold 10 -55 to 150°C

-

Note: Contact ST sales office for information about the specific conditions for product in die form

and for other packages.

November 2011 Doc ID 17486 Rev 6 1/17

www.st.com

17

Contents STRH100N10

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

7 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2/17 Doc ID 17486 Rev 6

STRH100N10 Electrical ratings

1 Electrical ratings

(TC= 25 °C unless otherwise specified)

Table 2. Absolute maximum ratings (pre-irradiation)

Symbol Parameter Value Unit

(1)

V

DS

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt

T

T

Drain-source voltage (VGS = 0)

(2)

Gate-source voltage ±20 V

(3)

Drain current (continuous) 48 A

(3)

Drain current (continuous) at TC= 100 °C 30 A

(4)

Drain current (pulsed) 192 A

(3)

Total dissipation 170 W

(5)

Peak diode recovery voltage slope 2.6 V/ns

Storage temperature

stg

Operating junction temperature °C

J

1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BV

2. This value is guaranteed over the full range of temperature.

3. Rated according to the Rthj-case + Rthc-s.

4. Pulse width limited by safe operating area.

5. ISD ≤ 48 A, di/dt ≤ 100 A/µs, VDD = 80% V

(BR)DSS.

DSS

100 V

°C

- 55 to 150

vs temperature).

Table 3. Thermal data

Symbol Parameter Value Unit

R

thj-case

R

thc-s

Thermal resistance junction-case 0.52 °C/W

Case-to-sink typ 0.21 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

I

E

AS

E

E

Avalanche current, repetitive or not-repetitive

AR

(pulse width limited by T

Single pulse avalanche energy

(1)

(starting T

=25 °C, ID= IAR, VDD=50 V)

J

max)

J

Single pulse avalanche energy

AS

(starting T

=110 °C, ID= IAR, VDD=50 V)

J

Repetitive avalanche

AR

dd

= 50 V, IAR = 24 A, f = 10 KHz, TJ = 25 °C,

(V
duty cycle = 50%)

24 A

954 mJ

280 mJ

60 mJ

Doc ID 17486 Rev 6 3/17

Electrical ratings STRH100N10

Table 4. Avalanche characteristics (continued)

Symbol Parameter Value Unit

Repetitive avalanche

= 50 V, IAR = 24 A, f = 100 KHz, TJ = 25 °C,

(V

dd

duty cycle = 10%)

E

AR

Repetitive avalanche

= 50 V, IAR = 24 A, f = 100 KHz, TJ = 110

(V

dd

°C, duty cycle = 10%)

1. Maximum rating value.

24

mJ

7.7

4/17 Doc ID 17486 Rev 6

STRH100N10 Electrical characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified).

Pre-irradiation

Table 5. Pre-irradiation on/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

DSS

I

GSS

BV

DSS

V

GS(th)

R

DS(on)

1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BV

Table 6. Pre-irradiation dynamic

Zero gate voltage drain
current (V

GS

= 0)

Gate body leakage current

= 0)

(V

DS

Drain-to-source breakdown

(1)

voltage

80% BV

V
V

V

Dss

= 20 V

GS

= -20 V -100

GS

= 0, ID = 1 mA 100 V

GS

100 nA

Gate threshold voltage VDS = VGS, ID = 1 mA 2 4.5 V

Static drain-source on
resistance

= 12 V; ID = 24 A 0.030 0.035 Ω

V

GS

vs temperature).

DSS

10 µA

nA

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

C

oss

C

C

oss eq.

Q
Q
Q

R

L

L

L

1. This value is guaranteed over the full range of temperature.

2. This value is defined as the ratio between the Q

3. Not tested, guaranteed by process.

Input capacitance

iss

Output capacitance

(1)

Reverse transfer

rss

capacitance

Equivalent output

(1)

capacitance

Total gate charge

g

Gate-to-source charge

gs

Gate-to-drain (“Miller”)

gd

charge

(3)

Gate input resistance

G

Gate inductance 4.5 nH

G

Source inductance 7.5 nH

S

Drain inductance 7.5 nH

D

(2)

= 0, VDS = 25 V,

V

GS

f=1 MHz

VGS = 0, VDD = 80 V 480 pF

= 50 V, ID = 48 A,

V

DD

=12 V

V

GS

f=1MHz gate DC bias=0
test signal level=20mV
open drain

and the voltage value applied.

oss

3940

543
190

108

21
36

4925

679
237

135

27
45

5910

814
284

162

33
54

1.2 1.7 2 Ω

pF
pF
pF

nC
nC
nC

Doc ID 17486 Rev 6 5/17

Electrical characteristics STRH100N10

Table 7. Switching times (pre-irradiation)

Symbol Parameter Test conditions Min. Typ. Max Unit

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time

r

Turn-off-delay time

t

Fall time

f

= 50 V, ID = 24 A,

V

DD

= 4.7 Ω, VGS = 12 V

R

G

Table 8. Source drain diode (pre-irradiation)

(1)

23
29
79
33

29.5
40
99
64

36
52

119

95

Symbol Parameter Test conditions Min. Typ. Max Unit

I

I

SDM

V

SD

t

rr

Q

I

RRM

t

rr

Q

I

RRM

1. Refer to the Figure 16.

2. Pulse width limited by safe operating area.

3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

4. Not tested in production, guaranteed by process.

Source-drain current

SD

Source-drain current

(2)

(pulsed)

(3)

Forward on voltage I

(4)

Reverse recovery time

(4)

Reverse recovery charge

rr

(4)

Reverse recovery current

(4)

Reverse recovery time

(4)

Reverse recovery charge

rr

(4)

Reverse recovery current

48

192

= 48 A, VGS = 0 1.5 V

SD

= 48 A,

I

SD

di/dt = 100 A/µs

= 50 V, TJ = 25 °C

V

DD

= 48 A,

I

SD

di/dt = 100 A/µs

= 50 V, TJ = 150 °C

V

DD

328 413

400 500

498 ns

5

24

600 ns

7

28

ns
ns
ns
ns

A
A

µC

A

µC

A

6/17 Doc ID 17486 Rev 6

STRH100N10 Radiation characteristics

3 Radiation characteristics

The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant
to radiative environments. Every manufacturing lot is tested for total ionizing dose
(irradiation done according to the ESCC 22900 specification, window 1) using the TO-3
package. Both pre-irradiation and post-irradiation performances are tested and specified
using the same circuitry and test conditions in order to provide a direct comparison.

(T

= 22 ± 3 °C unless otherwise specified).

amb

Total dose radiation (TID) testing

One bias conditions using the TO-3 package:

–V

The following parameters are measured (see Table 9, Table 10 and Table 11):

● before irradiation

● after irradiation

● after 24 hrs @ room temperature

● after 240 hrs @ 100 °C anneal

bias: + 15 V applied and VDS= 0 V during irradiation

GS

Table 9. Post-irradiation on/off states @ T

= 25 °C, (Co60 γ rays 70 K Rad(Si))

J

Symbol Parameter Test conditions Drift values ∆ Unit

I

I

BV

V

GS(th)

R

DS(on)

DSS

GSS

DSS

Zero gate voltage drain current
(VGS = 0)

Gate body leakage current
(VDS = 0)

Drain-to-source breakdown
voltage

80% BV

V
V

V

Dss

= 20 V

GS

= -20 V

GS

= 0, ID = 1 mA -25% V

GS

+4 µA

15

-15

Gate threshold voltage VDS = VGS, ID = 1 mA -50% / + 5% V

Static drain-source on resistance VGS = 10 V; ID = 36 A ±10% Ω

Table 10. Dynamic post-irradiation @ TJ= 25 °C, (Co60 γ rays 70 K Rad(Si))

Symbol Parameter Test conditions Drift values ∆ Unit

Q

Q

gs

Q

gd

1. Post irradiation data guaranteed at 25°C per ESCC 22900 specification.

Total gate charge

g

= 1 mA, VGS = 12 V,

I

Gate-source charge ±35%

G

VDS = 50 V, IDS = 40 A

Gate-drain charge -5% / +130%

-5% / +50%

nA

(1)

nC

Doc ID 17486 Rev 6 7/17

Radiation characteristics STRH100N10

Table 11. Source drain diode post-irradiation @ T

Rad(Si))

(1)

= 25 °C, (Co60 γ rays 70 K

J

Symbol Parameter Test conditions Drift values ∆.Unit

(2)

V

SD

Forward on voltage I

= 50 A, VGS = 0 ±10% V

SD

1. Refer to Figure 16.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Single event effect, SOA

The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant
to heavy ion environment for single event effect (irradiation per MIL-STD-750E, method
1080, bias circuit in Figure 3: Single event effect, bias circuit) SEB and SEGR tests have
been performed with a fluence of 3e+5 ions/cm².

The accept/reject criteria are:

● SEB test: drain voltage checked, trigger level is set to V

soon as a SEB occurs or if the fluence reaches 3e+5 ions/cm².

● SEGR test: the gate current is monitored every 100 ms. A gate stress is performed

before and after irradiation. Stop condition: as soon as the gate current reaches 100 nA
(during irradiation or during PIGS test) or if the fluence reaches 3e+5 ions/cm².

The results are:

– no SEB

– SEGR test produces the following SOA (see Table 12: Single event effect (SEE),

safe operating area (SOA) and Figure 2: Single event effect, SOA)

= - 5 V. Stop condition: as

ds

Table 12. Single event effect (SEE), safe operating area (SOA)

Energy

Ion

Let (Mev/(mg/cm

2

)

(MeV)

Kr 32 768 94 100 80 60 30 10

Range

(µm)

@V

=0 @VGS= -2 V @VGS= -5 V @VGS= -10 V @VGS= -20 V

GS

V

(V)

DS

8/17 Doc ID 17486 Rev 6

STRH100N10 Radiation characteristics

Figure 2. Single event effect, SOA

100

Kr (32 MeV .cm²/mg)

-20 -15 -10 -5 0

Vgs (V)

Figure 3. Single event effect, bias circuit

(a)

90

80

70

60

50

40

30

20

10

0

Vds (% Vdsmax)

a. Bias condition during radiation refer to Table 12: Single event effect (SEE), safe operating area (SOA) .

Doc ID 17486 Rev 6 9/17

Electrical characteristics (curves) STRH100N10

Tj=150°C
Tc=25°C

Single pulse

100µs

1ms

10ms

DC

Operation in this area is

Limited by max R

DS(on)

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Figure 4. Safe operating area Figure 5. Thermal impedance

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δ=0.5

HG0K

10

10

10

10

-1

-2

-3

-5

0.2

0.1

0.01

Single pulse

-4

10

0.07

0.05

0.02

10

Zth=k(Rthj-c+Rthc-s)

δ=tp/τ

tp

τ

-2

-3

10

10

100

Operation in this area is

10

1

Id [A]

Figure 6. Output characteristics Figure 7. Transfer characteristics

Limited by max R

1

0

0.1 1 10 100 1000

I

D

(A)

200

Tj=150°C
Tc=25°C

Single pulse

GS

=12V

V

DS(on)

100µs

1ms

10ms

DC

Vds [V]

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150

100

6V

-1

(s)

t

p

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

10/17 Doc ID 17486 Rev 6

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1

0.1

DS

=25V, VGS=0

V
f=1MHz, T

J

=25°C

1

10

Crss

V

DS

(V)

STRH100N10 Electrical characteristics (curves)

Figure 10. Normalized BV

vs temperature Figure 11. Static drain-source on resistance

DSS

Figure 12. Normalized gate threshold voltage

vs temperature

Figure 13. Normalized on resistance vs

temperature

Figure 14. Source drain-diode forward

characteristics

Doc ID 17486 Rev 6 11/17

Test circuits STRH100N10

5 Test circuits

Figure 15. Switching times test circuit for resistive load

1. Max driver V

Figure 16. Source drain diode

slope = 1V/ns (no DUT)

GS

(1)

Figure 17. Unclamped inductive load test circuit (single pulse and repetitive)

12/17 Doc ID 17486 Rev 6

STRH100N10 Package mechanical data

6 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

Table 13. TO-254AA mechanical data

mm Inch

Dim.

Min. Typ. Max. Min. Typ. Max.

A 13.59 13.84 0.535 0.545

B 13.59 13.84 0.535 0.545

C 20.07 20.32 0.790 0.800

D 6.32 6.60 0.249 0.260

E 1.02 1.27 0.040 0.050

F 3.56 3.81 0.140 0.150

G 16.89 17.40 0.665 0.685

H 6.86 0.270

I 0.89 1.02 1.14 0.035 0.040 0.045

J 3.81 0.150

K 3.81 0.150

L 12.95 14.50 0.510 0.571

M 2.92 3.18

N0.71

R1 1.00 0.039

R2 1.52 1.65 1.78 0.060 0.065 0.070

Doc ID 17486 Rev 6 13/17

Package mechanical data STRH100N10

Figure 18. TO-254AA mechanical drawing

14/17 Doc ID 17486 Rev 6

STRH100N10 Order codes

7 Order codes

Table 14. Ordering information

Order code

ESCC part

number

STRH100N10HY1 -

Quality

level

Engineering

model

EPPL Package

­TO-254AA Gold

Lead

finish

Marking Packing

STRH100N10HY1+

BeO

Strip
pack

STRH100N10HY01 5205/021/01 ESCC flight Yes 520502101

Contact ST sales office for information about the specific conditions for products in die form and for other
packages.

Doc ID 17486 Rev 6 15/17

Revision history STRH100N10

8 Revision history

Table 15. Document revision history

Date Revision Changes

13-May-2010 1 First release.

14-Jun-2010 2 Updated Table 1: Device summary.

18-Oct-2010 3 Updated Table 1, 5, 9 and 14.

23-Dec-2010 4

25-Jul-2011 5

09-Nov-2011 6

Updated Figure 2: Single event effect, SOA. and TO-254AA
mechanical data.

Updated part numbers in Table 1: Device summary and Table 14:

Ordering information.

Minor text changes to improve readability.

Updated dynamic values on Table 6: Pre-irradiation dynamic,

Table 7: Switching times (pre-irradiation) and Table 8: Source drain
diode (pre-irradiation).

16/17 Doc ID 17486 Rev 6

STRH100N10

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Doc ID 17486 Rev 6 17/17