ST STRH100N10 User Manual

Rad-Hard 100 V, 48 A N-channel Power MOSFET

Features

V

BDSS

100 V 48 A 30 mOhm 135 nC

■ Fast switching

■ 100% avalanche tested

■ Hermetic package

■ 70 krad TID

■ SEE radiation hardened

I

D

R

DS(on)

STRH100N10

Q

g

3

2

TO-254AA

1

Applications

■ Satellite

■ High reliability

Figure 1. Internal schematic diagram

Description

This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects. This Power MOSFET is fully ESCC qualified.

Table 1. Device summary

Part number

ESCC part

number

STRH100N10HY1 -

STRH100N10HY01 5205/021/01 ESCC flight Yes

Quality

level

Engineering

model

Package

Lead

finish

Mass (g) Temp. range EPPL

TO-254AA Gold 10 -55 to 150°C

-

Note: Contact ST sales office for information about the specific conditions for product in die form

and for other packages.

November 2011 Doc ID 17486 Rev 6 1/17

www.st.com

17

Contents STRH100N10

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

7 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2/17 Doc ID 17486 Rev 6

STRH100N10 Electrical ratings

1 Electrical ratings

(TC= 25 °C unless otherwise specified)

Table 2. Absolute maximum ratings (pre-irradiation)

Symbol Parameter Value Unit

(1)

V

DS

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt

T

Drain-source voltage (VGS = 0)

(2)

Gate-source voltage ±20 V

(3)

Drain current (continuous) 48 A

(3)

Drain current (continuous) at TC= 100 °C 30 A

(4)

Drain current (pulsed) 192 A

(3)

Total dissipation 170 W

(5)

Peak diode recovery voltage slope 2.6 V/ns

Storage temperature

stg

Operating junction temperature °C

J

1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BV

2. This value is guaranteed over the full range of temperature.

3. Rated according to the Rthj-case + Rthc-s.

4. Pulse width limited by safe operating area.

5. ISD ≤ 48 A, di/dt ≤ 100 A/µs, VDD = 80% V

(BR)DSS.

DSS

100 V

°C

- 55 to 150

vs temperature).

Table 3. Thermal data

Symbol Parameter Value Unit

R

thj-case

R

thc-s

Thermal resistance junction-case 0.52 °C/W

Case-to-sink typ 0.21 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

I

E

AS

E

Avalanche current, repetitive or not-repetitive

AR

(pulse width limited by T

Single pulse avalanche energy

(1)

(starting T

=25 °C, ID= IAR, VDD=50 V)

J

max)

J

Single pulse avalanche energy

AS

(starting T

=110 °C, ID= IAR, VDD=50 V)

J

Repetitive avalanche

AR

dd

= 50 V, IAR = 24 A, f = 10 KHz, TJ = 25 °C,

(V duty cycle = 50%)

24 A

954 mJ

280 mJ

60 mJ

Doc ID 17486 Rev 6 3/17

Electrical ratings STRH100N10

Table 4. Avalanche characteristics (continued)

Symbol Parameter Value Unit

Repetitive avalanche

= 50 V, IAR = 24 A, f = 100 KHz, TJ = 25 °C,

(V

dd

duty cycle = 10%)

E

AR

Repetitive avalanche

= 50 V, IAR = 24 A, f = 100 KHz, TJ = 110

(V

dd

°C, duty cycle = 10%)

1. Maximum rating value.

24

mJ

7.7

4/17 Doc ID 17486 Rev 6

STRH100N10 Electrical characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified).

Pre-irradiation

Table 5. Pre-irradiation on/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

DSS

I

GSS

BV

DSS

V

GS(th)

R

DS(on)

1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BV

Table 6. Pre-irradiation dynamic

Zero gate voltage drain current (V

GS

= 0)

Gate body leakage current

= 0)

(V

DS

Drain-to-source breakdown

(1)

voltage

80% BV

V V

V

Dss

= 20 V

GS

= -20 V -100

GS

= 0, ID = 1 mA 100 V

GS

100 nA

Gate threshold voltage VDS = VGS, ID = 1 mA 2 4.5 V

Static drain-source on resistance

= 12 V; ID = 24 A 0.030 0.035 Ω

V

GS

vs temperature).

DSS

10 µA

nA

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

oss

C

oss eq.

Q Q Q

R

L

1. This value is guaranteed over the full range of temperature.

2. This value is defined as the ratio between the Q

3. Not tested, guaranteed by process.

Input capacitance

iss

Output capacitance

(1)

Reverse transfer

rss

capacitance

Equivalent output

(1)

capacitance

Total gate charge

g

Gate-to-source charge

gs

Gate-to-drain (“Miller”)

gd

charge

(3)

Gate input resistance

G

Gate inductance 4.5 nH

G

Source inductance 7.5 nH

S

Drain inductance 7.5 nH

D

(2)

= 0, VDS = 25 V,

V

GS

f=1 MHz

VGS = 0, VDD = 80 V 480 pF

= 50 V, ID = 48 A,

V

DD

=12 V

V

GS

f=1MHz gate DC bias=0 test signal level=20mV open drain

and the voltage value applied.

oss

3940

543 190

108

21 36

4925

679 237

135

27 45

5910

814 284

162

33 54

1.2 1.7 2 Ω

pF pF pF

nC nC nC

Doc ID 17486 Rev 6 5/17

Electrical characteristics STRH100N10

Table 7. Switching times (pre-irradiation)

Symbol Parameter Test conditions Min. Typ. Max Unit

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time

r

Turn-off-delay time

t

Fall time

f

= 50 V, ID = 24 A,

V

DD

= 4.7 Ω, VGS = 12 V

R

G

Table 8. Source drain diode (pre-irradiation)

(1)

23 29 79 33

29.5 40 99 64

36 52

119

95

Symbol Parameter Test conditions Min. Typ. Max Unit

I

SDM

V

SD

t

rr

Q

I

RRM

t

rr

Q

I

RRM

1. Refer to the Figure 16.

2. Pulse width limited by safe operating area.

3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

4. Not tested in production, guaranteed by process.

Source-drain current

SD

Source-drain current

(2)

(pulsed)

(3)

Forward on voltage I

(4)

Reverse recovery time

(4)

Reverse recovery charge

rr

(4)

Reverse recovery current

(4)

Reverse recovery time

(4)

Reverse recovery charge

rr

(4)

Reverse recovery current

48

192

= 48 A, VGS = 0 1.5 V

SD

= 48 A,

I

SD

di/dt = 100 A/µs

= 50 V, TJ = 25 °C

V

DD

= 48 A,

I

SD

di/dt = 100 A/µs

= 50 V, TJ = 150 °C

V

DD

328 413

400 500

498 ns

5

24

600 ns

7

28

ns ns ns ns

A A

µC

A

µC

A

6/17 Doc ID 17486 Rev 6