ST STPSC806 User Manual

STPSC806

600 V power Schottky silicon carbide diode

Features

■No or negligible reverse recovery

■Switching behavior independent of temperature

■Particularly suitable in PFC boost diode function

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

A

K

	TO-220AC
	STPSC806D
	K
		A
		NC
	D2PAK
	STPSC806G
Table 1.	Device summary
	IF(AV)		8 A
	VRRM		600 V
	Tj (max)		175 °C
	QC (typ)		10 nC

November 2010

Doc ID 16286 Rev 3

1/8

www.st.com

Characteristics

STPSC806

1

Characteristics

Table 2.

Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

V

IF(RMS)

Forward rms current

18

A

IF(AV)

Average forward current

Tc = 115 °C, δ = 0.5

8

A

Surge non repetitive forward

tp = 10 ms sinusoidal, Tc = 25 °C

30

IFSM

tp = 10 ms sinusoidal, Tc = 125 °C

24

A

current

tp = 10 µs square, Tc = 25 °C

120

IFRM

Repetitive peak forward current

Tc = 115 °C, Tj = 150 °C, δ = 0.1,

30

A

Tstg

Storage temperature range

-55 to +175

°C

Tj

Operating junction temperature

-40 to +175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Maximum value

Unit

Rth(j-c)

Junction to case

2.4

°C/W

Table 4.

Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

I

(1)

Reverse leakage

Tj = 25 °C

V

R

= V

RRM

-

20

100

µA

current

R

Tj = 150 °C

-

150

1000

V

(2)

Forward voltage drop

Tj = 25 °C

I

= 8 A

-

1.4

1.7

V

F

F

Tj = 150 °C

-

1.6

2.1

1. tp = 10 ms, δ < 2%

2. tp = 500 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 1.2 x I

F(AV)

+ 0.113 x I

2

F (RMS)

Table 5.

Other parameters

Symbol

Parameter

Test conditions

Typ.

Unit

Qc

Total capacitive charge

Vr = 400 V, IF = 8 A

dIF/dt = -200 A/µs

10

nC

Tj = 150 °C

C

Total capacitance

Vr = 0 V, Tc = 25 °C, F = 1 Mhz

450

pF

Vr = 400 V, Tc = 25 °C, F = 1 Mhz

35

2/8	Doc ID 16286 Rev 3

STPSC806	Characteristics
Figure 1. Forward voltage drop versus	Figure 2. Reverse leakage current versus
forward current (typical values)	reverse voltage applied
	(maximum values)

I	(A)
FM								I	(µA)
16
							1.E+04	R
14
							1.E+03						Tj=175 °C
12		Tj=25 °C
10					Tj=150 °C					Tj=150 °C
							1.E+02
8					Tj=175 °C
6							1.E+01
4							1.E+00
2															Tj=25 °C			VR(V)
					VFM(V)
0							1.E-01
								0	50	100	150	200	250	300	350	400	450	500	550	600
0.0	0.5	1.0	1.5	2.0	2.5	3.0

Figure 3. Peak forward current versus case Figure 4.	Junction capacitance versus
temperature	reverse voltage applied
	(typical values)

I	(A)
M

70

C(pF)

T	350

60	δ=0.1			F=1 MHz
			300	VOSC=30 mVRMS
	δ=tp/T	tp		Tj=25 °C

50									250
40	δ=0.3								200
30	δ=0.5								150
20									100
10	δ=1		δ=0.7						50
											VR(V)
				TC(°C)
									0
0
									1	10	100	1000
	0	25	50	75	100	125	150	175

Doc ID 16286 Rev 3

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