ST STPSC6H065 User Manual

STPSC6H065

650 V power Schottky silicon carbide diode

Features

■No or negligible reverse recovery

■Switching behavior independent of temperature

■Dedicated to PFC applications

■High forward surge capability

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures more margin during transient phases.

Datasheet − production data

K

	K
A	A
	NC
K
TO-220AC	D2PAK
STPSC6H065D	STPSC6H065G
	K
	A
	NC
	DPAK

STPSC6H065B

Table 1.	Device summary
	Symbol		Value
	IF(AV)		6 A
	VRRM		650 V
	Tj (max)		175 °C
	QC (typ)		10 nC

June 2012

Doc ID 023247 Rev 1

1/9

This is information on a product in full production.

www.st.com

Characteristics

STPSC6H065

1

Characteristics

Table 2.

Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

V

IF(RMS)

Forward rms current

21

A

DPAK, Tc = TBD °C, δ = 0.5

IF(AV)

Average forward current

TO-220AC, Tc = 122 °C, δ = 0.5

6

A

D2PAK, T = TBD °C, δ = 0.5

c

Surge non repetitive forward

tp = 10 ms sinusoidal, Tc = 25 °C

60

IFSM

tp

= 10 ms sinusoidal, Tc = 125 °C

52

A

current

tp = 10 µs square, Tc = 25 °C

400

Tstg

Storage temperature range

-55 to +175

°C

Tj

Operating junction temperature

-40 to +175

°C

Table 3.

Thermal resistance (typical values)

Symbol

Parameter

Value

Unit

DPAK

Rth(j-c)

Junction to case

TO-220AC

1.6

°C/W

D2PAK

Table 4.

Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

I

(1)

Reverse leakage

Tj = 25 °C

V

R

= V

RRM

-

5

60

µA

current

R

Tj = 150 °C

-

50

250

V

(2)

Forward voltage drop

Tj = 25 °C

I

= 6 A

-

1.56

1.75

V

F

Tj = 150 °C

F

-

1.98

2.5

1. tp = 10 ms, δ < 2%

2. tp = 500 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 1.35 x IF(AV) + 0.192 x IF2(RMS)

Table 5.

Other parameters

Symbol

Parameter

Test conditions

Typ.

Unit

Qc

Total capacitive charge

Vr = 400 V, IF = 6 A dIF/dt = -500 A/µs

10

nC

Tj = 150 °C

C

Total capacitance

Vr = 0 V, Tc = 25 °C, F = 1 Mhz

300

pF

Vr = 400 V, Tc = 25 °C, F = 1 Mhz

30

2/9	Doc ID 023247 Rev 1

STPSC6H065	Characteristics

Figure 1. Forward voltage drop versus forward current (typical values, low level)

Figure 2. Forward voltage drop versus forward current (typical values, high level)

I	(A)							I	(A)
FM								FM
12								60
	Puse test : tp=380µs								Puse test : tp=380µs
10								50
		Ta=25 °C
8						Ta=150 °C		40
										Ta=25 °C
6						Ta=175 °C		30
4								20	Ta=150 °C
2								10							VFM(V)
						VFM(V)							Ta=175 °C
0								0
0.0	0.5	1.0	1.5	2.0	2.5	3.0	3.5	0.0	1.0	2.0	3.0	4.0	5.0	6.0	7.0	8.0

Figure 3. Reverse leakage current versus															Figure 4. Peak forward current versus case
			reverse voltage applied															temperature
			(typical values)
	I	(µA)													70	I	M	(A)
1.E+02	R
						Tj=175 °C									60		δ	= 0.1	T
1.E+01															50			δ = tp/T	tp
			Tj=150 °C
															40
1.E+00																δ = 0.3
															30		δ = 0.5
1.E-01															20		δ = 0.7
									Tj=25 °C
												VR(V)			10		δ = 1
1.E-02															0			TC(°C)
	0	50	100	150	200	250	300	350	400	450	500	550	600	650

0 25 50 75 100 125 150 175

Figure 5. Relative variation of thermal	Figure 6. Non-repetitive peak surge forward
impedance junction to case	current versus pulse duration
versus pulse duration	(sinusoidal waveform)

Z	/R
th(j c)	th(j c)

1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1	Single pulse				tp(s)
0.0
1.E-05		1.E-04	1.E-03	1.E-02	1.E-01	1.E+00

1.E+03
		Ta=25 °C
1.E+02		Ta=125 °C
			tp(s)
1.E+01
1.E-05	1.E-04	1.E-03	1.E-02

Doc ID 023247 Rev 1

3/9