ST STPSC6H065 User Manual

Features

STPSC6H065

650 V power Schottky silicon carbide diode

Datasheet − production data

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Dedicated to PFC applications

■ High forward surge capability

Description

The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.

Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures more margin during transient
phases.

K

A

K

TO-220AC

STPSC6H065D

K

A

NC

DPAK

STPSC6H065B

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

(max) 175 °C

j

Q

C (typ)

K

A

NC

2

PAK

D

STPSC6H065G

6 A

650 V

10 nC

June 2012 Doc ID 023247 Rev 1 1/9

This is information on a product in full production.

www.st.com

9

Characteristics STPSC6H065

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

FSM

T

Table 3. Thermal resistance (typical values)

Repetitive peak reverse voltage 650

RRM

Forward rms current 21

DPAK, T

Average forward current

Surge non repetitive forward
current

Storage temperature range -55 to +175 °C

stg

Operating junction temperature -40 to +175 °C

T

j

TO-220AC, Tc = 122 °C, δ = 0.5

2

D

= 10 ms sinusoidal, Tc = 25 °C

t

p

= 10 ms sinusoidal, Tc = 125 °C

t

p

= 10 µs square, Tc = 25 °C

t

p

= TBD °C, δ = 0.5

c

PAK, Tc = TBD °C, δ = 0.5

6

60
52

400

Symbol Parameter Value Unit

V

A

A

A

DPAK

R

th(j-c)

Table 4. Static electrical characteristics

Junction to case

1.6 °C/WTO-220AC

2

PA K

D

Symbol Parameter Tests conditions Min. Typ. Max. Unit

R

V

1. tp = 10 ms, δ < 2%

2. tp = 500 µs, δ < 2%

current

(2)

Forward voltage drop

F

Reverse leakage

(1)

I

= 25 °C

T

j

= 150 °C - 50 250

T

j

T

= 25 °C

j

= 150 °C - 1.98 2.5

T

j

VR = V

= 6 A

I

F

RRM

-560
µA

- 1.56 1.75

To evaluate the conduction losses use the following equation:
P = 1.35 x I

Table 5. Other parameters

Symbol Parameter Test conditions Typ. Unit

Q

c

C Total capacitance

+ 0.192 x I

F(AV)

F2(RMS)

Total capacitive charge

= 400 V, IF = 6 A dIF/dt = -500 A/µs

V

r

= 150 °C

T

j

= 0 V, Tc = 25 °C, F = 1 Mhz 300

V

r

= 400 V, Tc = 25 °C, F = 1 Mhz 30

V

r

10 nC

V

pF

2/9 Doc ID 023247 Rev 1

STPSC6H065 Characteristics

(A)

Figure 1. Forward voltage drop versus

forward current (typical values, low
level)

I

FM

12

Puse test : tp=380µs

10

8

6

4

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Ta=25 °C

Ta=150 °C

Ta=175 °C

VFM(V)

Figure 3. Reverse leakage current versus

reverse voltage applied
(typical values)

IR(µA)

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

0 50 100 150 200 250 300 350 400 450 500 550 600 650

Tj=150 °C

Tj=175 °C

Tj=25 °C

VR(V)

Figure 2. Forward voltage drop versus

forward current (typical values,
high level)

IFM(A)

60

Puse test : tp=380µs

50

40

30

20

10

0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

Ta=150 °C

Ta=25 °C

Ta=175 °C

VFM(V)

Figure 4. Peak forward current versus case

temperature

IM(A)

70

δ 0.1=

60

50

40

δ3= 0.

30

δ5= 0.

δ7= 0.

20

δ1=

10

0

0 25 50 75 100 125 150 175

TC(°C)

T

tp

= tp/T

δ

Figure 5. Relative variation of thermal

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

impedance junction to case
versus pulse duration

Z

th(j c)/Rth(j c)

Single pulse

tp(s)

Figure 6. Non-repetitive peak surge forward

current versus pulse duration
(sinusoidal waveform)

1.E+03

Ta=25 °C

1.E+02

1.E+01

1.E-05 1.E-04 1.E-03 1.E-02

Ta=125 °C

tp(s)

Doc ID 023247 Rev 1 3/9