ST STPSC606 User Manual

STPSC606

600 V power Schottky silicon carbide diode

Features

■No or negligible reverse recovery

■Switching behavior independent of temperature

■Dedicated to PFC boost diode

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

K

A

K

TO-220AC

STPSC606D

K

A

NC

D2PAK

STPSC606G

Table 1.	Device summary
	IF(AV)		6 A
	VRRM		600 V
	Tj (max)		175 °C
	QC (typ)		6 nC

September 2009

Doc ID 16284 Rev 1

1/8

www.st.com

Characteristics

STPSC606

1

Characteristics

Table 2.

Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

V

IF(RMS)

Forward rms current

18

A

IF(AV)

Average forward current

Tc = 125 °C, δ = 0.5

6

A

Surge non repetitive forward

tp = 10 ms sinusoidal, Tc = 25 °C

27

IFSM

tp = 10 ms sinusoidal, Tc = 125 °C

22

A

current

tp = 10 µs square, Tc = 25 °C

110

IFRM

Repetitive peak forward current

δ = 0.1, Tc = 110 °C, Tj = 150 °C

27

A

Tstg

Storage temperature range

-55 to +175

°C

Tj

Operating junction temperature range

-40 to +175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

2.8

°C/W

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

I

(1)

Reverse leakage

Tj

= 25 °C

V

R

= V

RRM

-

15

75

µA

current

R

Tj

= 150 °C

-

100

750

V

(2)

Forward voltage drop

Tj

= 25 °C

I

= 6 A

-

1.4

1.7

V

F

Tj

= 150 °C

F

-

1.6

2.1

1. tp = 10 ms, δ < 2%

2. tp = 500 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 1.20x I

F(AV)

+ 0.15 x I

2

F (RMS)

Table 5.

Other parameters

Symbol

Parameter

Test conditions

Typ.

Unit

Qc

Total capacitive charge

Vr = 400 V, IF = 6 A

dIF/dt = -200 A/µs

6

nC

Tj = 150 °C

C

Total capacitance

Vr = 0 V, Tc = 25 °C, F = 1 Mhz

375

pF

Vr = 400 V, Tc = 25 °C, F = 1 Mhz

30

2/8	Doc ID 16284 Rev 1

STPSC606	Characteristics
Figure 1. Forward voltage drop versus	Figure 2. Reverse leakage current versus
forward current (typical values)	reverse voltage applied
	(maximum values)

I	(A)
FM
12
10
		Tj=25 °C
8					Tj=150 °C
6					Tj=175 °C
4
2					VFM(V)
0
0.0	0.5	1.0	1.5	2.0	2.5	3.0

I	(µA)
R
1.E+04
					Tj=175 °C
1.E+03
		Tj=150 °C
1.E+02
1.E+01
1.E+00							Tj=25 °C
										VR(V)
1.E-01
0	50	100	150	200	250	300	350	400	450	500	550	600

Figure 3. Peak forward current versus case Figure 4.	Junction capacitance versus
temperature	reverse voltage applied
	(typical values)

I	(A)
M

70

C(pF)

T

300

60	δ=0.1			F=1 MHz
			250	VOSC=30 mVRMS
	δ=tp/T	tp		Tj=25 °C

	50
									200
	40
		δ=0.3							150
	30	δ=0.5
									100
	20
	10	δd=1							50
			δd=0.7								VR(V)
				TC(°C)
									0
	0
									1	10	100	1000
	0	25	50	75	100	125	150	175

Doc ID 16284 Rev 1

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