The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
K
TO-220AC
STPSC406D
K
A
NC
DPAK
STPSC406B
Table 1.Device summary
I
F(AV)
V
RRM
T
j (max)
Q
C (typ)
A
K
4 A
600 V
175 °C
3 nC
September 2009Doc ID 16283 Rev 11/8
www.st.com
8
CharacteristicsSTPSC406
1 Characteristics
Table 2.Absolute ratings (limiting values at 25 °C unless otherwise specified)
SymbolParameterValueUnit
V
I
F(RMS)
I
F(AV)
I
I
T
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3.Thermal resistance
Repetitive peak reverse voltage600
RRM
Forward rms current11
Average forward
current
Surge non repetitive
FSM
forward current
Repetitive peak forward
FRM
current
Storage temperature range-55 to +175 °C
stg
Operating junction temperature
T
j
dPtot
dTj
<
Rth(j-a)
1
DPAK, T
TO-220AC, Tc = 95 °C, δ = 0.5
= 10 ms sinusoidal, Tc = 25 °C
t
p
= 10 ms sinusoidal, Tc = 125 °C
t
p
= 10 µs square, Tc = 25 °C
t
p
DPAK, Tc = 115 °C, Tj = 150 °C, δ = 0.1
TO-220AC, Tc = 105 °C, Tj = 150 °C, δ = 0.1
= 110 °C, δ = 0.5
c
(1)
4
14
10
40
14
-40 to +175 °C
V
A
A
A
A
SymbolParameterValueUnit
T0-220AC5.5
R
th(j-c)
Table 4.Static electrical characteristics
Junction to case
DPAK4.5
°C/W
SymbolParameterTests conditionsMin.Typ.Max.Unit
IR
V
1. tp = 10 ms, δ < 2%
2. tp = 500 µs, δ < 2%
current
(2)
Forward voltage drop
F
Reverse leakage
(1)
= 25 °C
T
j
= 150 °C-60500
T
j
= 25 °C
T
j
= 150 °C-1.92.4
T
j
V
R
I
= 4 A
F
= V
RRM
-1050
-1.551.9
To evaluate the conduction losses use the following equation:
P = 1.20x I
Table 5.Other parameters
SymbolParameterTest conditionsTyp.Unit
Q
c
+ 0.3 x I
F(AV)
F2(RMS)
Total capacitive charge
= 400 V, IF = 4 A dIF/dt = -200 A/µs
V
r
Tj = 150 °C
3nC
µA
V
V
= 0 V, Tc = 25 °C, F = 1 Mhz200
CTotal capacitance
r
= 400 V, Tc = 25 °C, F = 1 Mhz20
V
r
2/8Doc ID 16283 Rev 1
pF
STPSC406Characteristics
Figure 1.Forward voltage drop versus
forward current (typical values)
IFM(A)
8
7
6
5
4
3
2
1
0
0.00.51.01.52.02.53.03.5
Tj=25°CTj=25 °C
Tj=150°CTj=150 °C
Tj=175°CTj=175 °C
VFM(V)
Figure 3.Peak forward current versus case
temperature (TO-220AC)
IM(A)
35
δ=0.1
30
25
20
δ=0.3
15
δ=0.5
10
5
d=1δ=1
d=0.7δ=0.7
0
0255075100125150175
TC(°C)
δ
=tp/T
T
tp
Figure 5.Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
150
125
100
75
50
25
0
1101001000
VR(V)
V
OSC
F=1 MHz
=30 mV
Tj=25 °C
RMS
Figure 2.Reverse leakage current versus
reverse voltage applied
(maximum values)
IR(µA)
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
050 100 150 200 250 300 350 400 450 500 550 600
Tj=150°CTj=150 °C
Tj=175°CTj=175 °C
Tj=25°CTj=25 °C
VR(V)
Figure 4.Peak forward current versus case
temperature (DPAK)
IM(A)
35
30
25
20
15
10
δ=0.1
δ=0.3
δ=0.5
d=1δ=1
5
0
0255075100125150175
d=0.7δ=0.7
TC(°C)
δ
=tp/T
T
tp
Figure 6.Relative variation of thermal
impedance junction to case
versus pulse duration (TO-220AC)
Z
th(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-051.E-041.E-031.E-021.E-011.E+001.E+01
tp(s)
Doc ID 16283 Rev 13/8
CharacteristicsSTPSC406
th(j c)/Rth(j c)
Single pulse
impedance junction to case
versus pulse duration (DPAK)
tp(s)
Figure 8.Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform)
I
(A)
FSM
1.E+03
1.E+02
1.E+01
1.E+00
1.E-051.E-041.E-031.E-021.E-011.E+00
Figure 7.Relative variation of thermal
Z
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-051.E-041.E-031.E-021.E-011.E+001.E+01
Figure 9.Total capacitive charges versus dIF/dt (typical values)
QC(nC)
7
IF=4 A
V
=400 V
R
6
Tj=150 °C
5
4
Tc=25 °C
Tc=125 °C
tp(s)
3
2
1
0
050100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
4/8Doc ID 16283 Rev 1
STPSC406Package information
2 Package information
●Epoxy meets UL94, V0
●Cooling method: convection (C)
●Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
Table 6.TO-220AC dimensions
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
.
Dimensions
Ref.
Millimeters Inches
Min.Max.Min.Max.
A4.404.600.1730.181
H2
Ø I
L5
A
C
L7
C1.231.320.0480.051
D2.402.720.0940.107
E0.490.700.0190.027
F0.610.880.0240.034
L2
F1
L9
L6
D
F11.141.700.0440.066
G4.955.150.1940.202
H210.0010.400.3930.409
L216.40 typ.0.645 typ.
L4
F
M
E
G
L413.0014.000.5110.551
L52.652.950.1040.116
L615.2515.750.6000.620
L76.206.600.2440.259
L93.503.930.1370.154
M2.6 typ.0.102 typ.
Diam. I3.753.850.1470.151
Doc ID 16283 Rev 15/8
Package informationSTPSC406
Table 7.DPAK dimensions
Dimensions
E
B2
L2
H
L4
B
G
0.60 MIN.
A1
A2
V2
A
C2
D
R
R
C
Figure 10. Footprint (dimensions in mm)
6.733
Ref.
MillimetersInches
Min.Max.Min.Max.
A2.202.400.0860.094
A10.901.100.0350.043
A20.030.230.0010.009
B0.640.900.0250.035
B25.205.400.2040.212
C0.450.600.0170.023
C20.480.600.0180.023
D6.006.200.2360.244
E6.406.600.2510.259
G4.404.600.1730.181
H9.3510.100.3680.397
L20.80 typ.0.031 typ.
L40.601.000.0230.039
V20°8°0°8°
1.6
6.7
6/8Doc ID 16283 Rev 1
2.3
2.3
1.6
STPSC406Ordering information
3 Ordering information
Table 8.Ordering information
Order codeMarkingPackageWeightBase qtyDelivery mode
STPSC406DSTPSC406DTO-220AC1.86 g50Tube
STPSC406B-TRSTPSC406BDPAK0.3g2500Tape and reel
4 Revision history
Table 9.Document revision history
DateRevisionChanges
24-Sep-20091First issue.
Doc ID 16283 Rev 17/8
STPSC406
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