ST STPSC406 User Manual

Features
STPSC406
600 V power Schottky silicon carbide diode
No or negligible reverse recovery
Switching behavior independent of
temperature
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
K
TO-220AC
STPSC406D
K
A
NC
DPAK
STPSC406B

Table 1. Device summary

I
F(AV)
V
RRM
T
j (max)
Q
C (typ)
A
K
4 A
600 V
175 °C
3 nC
September 2009 Doc ID 16283 Rev 1 1/8
www.st.com
8
Characteristics STPSC406

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
T
1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Repetitive peak reverse voltage 600
RRM
Forward rms current 11
Average forward current
Surge non repetitive
FSM
forward current
Repetitive peak forward
FRM
current
Storage temperature range -55 to +175 °C
stg
Operating junction temperature
T
j
dPtot
dTj
<
Rth(j-a)
1
DPAK, T
TO-220AC, Tc = 95 °C, δ = 0.5
= 10 ms sinusoidal, Tc = 25 °C
t
p
= 10 ms sinusoidal, Tc = 125 °C
t
p
= 10 µs square, Tc = 25 °C
t
p
DPAK, Tc = 115 °C, Tj = 150 °C, δ = 0.1
TO-220AC, Tc = 105 °C, Tj = 150 °C, δ = 0.1
= 110 °C, δ = 0.5
c
(1)
4
14 10 40
14
-40 to +175 °C
V
A
A
A
A
Symbol Parameter Value Unit
T0-220AC 5.5
R
th(j-c)

Table 4. Static electrical characteristics

Junction to case
DPAK 4.5
°C/W
Symbol Parameter Tests conditions Min. Typ. Max. Unit
IR
V
1. tp = 10 ms, δ < 2%
2. tp = 500 µs, δ < 2%
current
(2)
Forward voltage drop
F
Reverse leakage
(1)
= 25 °C
T
j
= 150 °C - 60 500
T
j
= 25 °C
T
j
= 150 °C - 1.9 2.4
T
j
V
R
I
= 4 A
F
= V
RRM
-1050
-1.551.9
To evaluate the conduction losses use the following equation: P = 1.20x I

Table 5. Other parameters

Symbol Parameter Test conditions Typ. Unit
Q
c
+ 0.3 x I
F(AV)
F2(RMS)
Total capacitive charge
= 400 V, IF = 4 A dIF/dt = -200 A/µs
V
r
Tj = 150 °C
3nC
µA
V
V
= 0 V, Tc = 25 °C, F = 1 Mhz 200
C Total capacitance
r
= 400 V, Tc = 25 °C, F = 1 Mhz 20
V
r
2/8 Doc ID 16283 Rev 1
pF
STPSC406 Characteristics
Figure 1. Forward voltage drop versus
forward current (typical values)
IFM(A)
8
7
6
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Tj=25 °CTj=25 °C
Tj=150 °CTj=150 °C
Tj=175 °CTj=175 °C
VFM(V)
Figure 3. Peak forward current versus case
temperature (TO-220AC)
IM(A)
35
δ=0.1
30
25
20
δ=0.3
15
δ=0.5
10
5
d=1δ=1
d=0.7δ=0.7
0
0 25 50 75 100 125 150 175
TC(°C)
δ
=tp/T
T
tp
Figure 5. Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
150
125
100
75
50
25
0
1 10 100 1000
VR(V)
V
OSC
F=1 MHz
=30 mV
Tj=25 °C
RMS
Figure 2. Reverse leakage current versus
reverse voltage applied (maximum values)
IR(µA)
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
0 50 100 150 200 250 300 350 400 450 500 550 600
Tj=150 °CTj=150 °C
Tj=175 °CTj=175 °C
Tj=25 °CTj=25 °C
VR(V)
Figure 4. Peak forward current versus case
temperature (DPAK)
IM(A)
35
30
25
20
15
10
δ=0.1
δ=0.3
δ=0.5
d=1δ=1
5
0
0 25 50 75 100 125 150 175
d=0. 7δ=0.7
TC(°C)
δ
=tp/T
T
tp
Figure 6. Relative variation of thermal
impedance junction to case versus pulse duration (TO-220AC)
Z
th(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
tp(s)
Doc ID 16283 Rev 1 3/8
Characteristics STPSC406
th(j c)/Rth(j c)
Single pulse
impedance junction to case versus pulse duration (DPAK)
tp(s)
Figure 8. Non-repetitive peak surge forward
current versus pulse duration (sinusoidal waveform)
I
(A)
FSM
1.E+03
1.E+02
1.E+01
1.E+00
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Figure 7. Relative variation of thermal
Z
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Figure 9. Total capacitive charges versus dIF/dt (typical values)

QC(nC)
7
IF=4 A
V
=400 V
R
6
Tj=150 °C
5
4
Tc=25 °C
Tc=125 °C
tp(s)
3
2
1
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
4/8 Doc ID 16283 Rev 1
STPSC406 Package information

2 Package information

Epoxy meets UL94, V0
Cooling method: convection (C)
Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com ECOPACK

Table 6. TO-220AC dimensions

®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
.
Dimensions
Ref.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
H2
Ø I
L5
A
C
L7
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
L2
F1
L9
L6
D
F1 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ.
L4
F
M
E
G
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. I 3.75 3.85 0.147 0.151
Doc ID 16283 Rev 1 5/8
Package information STPSC406

Table 7. DPAK dimensions

Dimensions
E
B2
L2
H
L4
B
G
0.60 MIN.
A1
A2
V2
A
C2
D
R
R
C

Figure 10. Footprint (dimensions in mm)

6.7 3 3
Ref.
Millimeters Inches
Min. Max. Min. Max.
A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039
V2
1.6
6.7
6/8 Doc ID 16283 Rev 1
2.3
2.3
1.6
STPSC406 Ordering information

3 Ordering information

Table 8. Ordering information

Order code Marking Package Weight Base qty Delivery mode
STPSC406D STPSC406D TO-220AC 1.86 g 50 Tube
STPSC406B-TR STPSC406B DPAK 0.3g 2500 Tape and reel

4 Revision history

Table 9. Document revision history

Date Revision Changes
24-Sep-2009 1 First issue.
Doc ID 16283 Rev 1 7/8
STPSC406
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8/8 Doc ID 16283 Rev 1
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