ST STPSC406 User Manual

Features

STPSC406

600 V power Schottky silicon carbide diode

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Dedicated to PFC boost diode

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

K

TO-220AC

STPSC406D

K

A

NC

DPAK

STPSC406B

Table 1. Device summary

I

F(AV)

V

RRM

T

j (max)

Q

C (typ)

A

K

4 A

600 V

175 °C

3 nC

September 2009 Doc ID 16283 Rev 1 1/8

www.st.com

8

Characteristics STPSC406

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Repetitive peak reverse voltage 600

RRM

Forward rms current 11

Average forward current

Surge non repetitive

FSM

forward current

Repetitive peak forward

FRM

current

Storage temperature range -55 to +175 °C

stg

Operating junction temperature

T

j

dPtot

dTj

<

Rth(j-a)

1

DPAK, T

TO-220AC, Tc = 95 °C, δ = 0.5

= 10 ms sinusoidal, Tc = 25 °C

t

p

= 10 ms sinusoidal, Tc = 125 °C

t

p

= 10 µs square, Tc = 25 °C

t

p

DPAK, Tc = 115 °C, Tj = 150 °C, δ = 0.1

TO-220AC, Tc = 105 °C, Tj = 150 °C, δ = 0.1

= 110 °C, δ = 0.5

c

(1)

4

14 10 40

14

-40 to +175 °C

V

A

Symbol Parameter Value Unit

T0-220AC 5.5

R

th(j-c)

Table 4. Static electrical characteristics

Junction to case

DPAK 4.5

°C/W

Symbol Parameter Tests conditions Min. Typ. Max. Unit

IR

V

1. tp = 10 ms, δ < 2%

2. tp = 500 µs, δ < 2%

current

(2)

Forward voltage drop

F

Reverse leakage

(1)

= 25 °C

T

j

= 150 °C - 60 500

T

j

= 25 °C

T

j

= 150 °C - 1.9 2.4

T

j

V

R

I

= 4 A

F

= V

RRM

-1050

-1.551.9

To evaluate the conduction losses use the following equation: P = 1.20x I

Table 5. Other parameters

Symbol Parameter Test conditions Typ. Unit

Q

c

+ 0.3 x I

F(AV)

F2(RMS)

Total capacitive charge

= 400 V, IF = 4 A dIF/dt = -200 A/µs

V

r

Tj = 150 °C

3nC

µA

V

= 0 V, Tc = 25 °C, F = 1 Mhz 200

C Total capacitance

r

= 400 V, Tc = 25 °C, F = 1 Mhz 20

V

r

2/8 Doc ID 16283 Rev 1

pF

STPSC406 Characteristics

Figure 1. Forward voltage drop versus

forward current (typical values)

IFM(A)

8

7

6

5

4

3

2

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Tj=25 °CTj=25 °C

Tj=150 °CTj=150 °C

Tj=175 °CTj=175 °C

VFM(V)

Figure 3. Peak forward current versus case

temperature (TO-220AC)

IM(A)

35

δ=0.1

30

25

20

δ=0.3

15

δ=0.5

10

5

d=1δ=1

d=0.7δ=0.7

0

0 25 50 75 100 125 150 175

TC(°C)

δ

=tp/T

T

tp

Figure 5. Junction capacitance versus

reverse voltage applied (typical values)

C(pF)

150

125

100

75

50

25

0

1 10 100 1000

VR(V)

V

OSC

F=1 MHz

=30 mV

Tj=25 °C

RMS

Figure 2. Reverse leakage current versus

reverse voltage applied (maximum values)

IR(µA)

1.E+04

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

0 50 100 150 200 250 300 350 400 450 500 550 600

Tj=150 °CTj=150 °C

Tj=175 °CTj=175 °C

Tj=25 °CTj=25 °C

VR(V)

Figure 4. Peak forward current versus case

temperature (DPAK)

IM(A)

35

30

25

20

15

10

δ=0.1

δ=0.3

δ=0.5

d=1δ=1

5

0

0 25 50 75 100 125 150 175

d=0. 7δ=0.7

TC(°C)

δ

=tp/T

T

tp

Figure 6. Relative variation of thermal

impedance junction to case versus pulse duration (TO-220AC)

Z

th(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

tp(s)

Doc ID 16283 Rev 1 3/8