ST STPSC2006CW User Manual

STPSC2006CW

600 V power Schottky silicon carbide diode

Features

■No or negligible reverse recovery

■Switching behavior independent of temperature

■Particularly suitable in PFC boost diode function

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

A1

K

A2

			A2
			K
			A1
		TO-247
		STPSC2006CW
Table 1.	Device summary
	Symbol		Value
	IF(AV)		2 x 10 A
	VRRM		600 V
	Tj (max)		175 °C
	QC (typ)		12 nC

March 2011

Doc ID 018506 Rev 1

1/7

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Characteristics	STPSC2006CW

1 Characteristics

	Table 2.	Absolute ratings (limiting values at 25 °C unless otherwise specified, per
		diode)
	Symbol	Parameter			Value	Unit
	VRRM	Repetitive peak reverse voltage			600	V
	IF(RMS)	Forward rms current			18	A
	IF(AV)	Average forward current	Tc = 115 °C, δ = 0.5	Per diode	10	A
			Tc = 100 °C, δ = 0.5	Per device	20	A
		Surge non repetitive forward	tp = 10 ms sinusoidal, Tc = 25 °C		40
	IFSM		tp = 10 ms sinusoidal, Tc = 125 °C		32	A
		current
			tp = 10 µs square, Tc = 25 °C		160
	IFRM	Repetitive peak forward current	δ = 0.1, Tc = 110 °C, Tj = 150 °C		40	A
	Tstg	Storage temperature range			-55 to +175	°C
	Tj	Maximum operating junction temperature range			-40 to +175	°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Per diode

2

°C/W

Rth(j-c)

Junction to case

Total

1.2

°C/W

Rth(c)

Coupling

0.4

°C/W

Table 4.

Static electrical characteristics per diode

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

I

R

(1)

Reverse leakage

Tj

= 25 °C

V

R

= V

-

30

150

µA

current

Tj

= 150 °C

RRM

-

210

1500

VF

(2)

Forward voltage drop

Tj

= 25 °C

IF = 10 A

-

1.4

1.7

V

Tj

= 150 °C

-

1.6

2.1

1.tp = 10 ms, δ < 2%

2.tp = 500 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 1.2 x IF(AV) + 0.09 x IF2(RMS)

	Table 5.	Other parameters per diode
	Symbol	Parameter			Test conditions	Typ.	Unit
	Qc	Total capacitive charge		Vr = 400 V, IF = 10 A dIF/dt = -200 A/µs		12	nC
				Tj = 150	°C
	C	Total capacitance		Vr = 0 V, Tc = 25 °C, F = 1 Mhz		650	pF
2/7			Doc ID 018506		Rev 1

STPSC2006CW	Characteristics
Figure 1. Forward voltage drop versus	Figure 2. Reverse leakage current versus
forward current	reverse voltage applied
(typical values, per diode)	(maximum values, per diode)

IFM(A)							IR(µA)
20							1.E+04
18												Tj = 175 °C
16							1.E+03
14		Tj = 25 °C		T	= 150 °C				Tj	= 150 °C
				j
12							1.E+02
10				Tj = 175 °C
8							1.E+01
6
4							1.E+00						Tj = 25 °C
2						VFM(V)												VR(V)
0							1.E-01
0.0	0.5	1.0	1.5	2.0	2.5	3.0	0	50	100	150	200	250	300	350	400	450	500	550	600

Figure 3. Peak forward current versus case Figure 4.	Junction capacitance versus
temperature (per diode)	reverse voltage applied
	(typical values, per diode)

70	IM(A)
		T
60	δ = 0.1	δ = tp / T	tp

50

40

δ = 0.3

30	δ = 0.5
20
10	δ = 1	δ = 0.7
0				TC(°C)
	0	25	50	75	100	125	150	175

	500		C(pF)
	450																					F	= 1 MHz
																						Vosc = 30 mVRMS
	400
																						T = 25 °C
	350																						j
	300
	250
	200
	150
	100
	50
	0																									V	R	(V)
		1		10									100									1000

Figure 5. Relative variation of thermal impedance junction to case versus pulse duration

Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, per diode)

1.0

Zth(j-c)/Rth(j-c)

IFSM(A)

1.E+03

0.9

0.8

0.7

1.E+02

TC = 25 °C

0.6

0.5

TC = 125 °C

0.4

0.3

1.E+01

0.2

0.1

Single pulse

tp(s)

tp(s)

0.0

1.E+00

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Doc ID 018506 Rev 1

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