ST STPSC2006CW User Manual

600 V power Schottky silicon carbide diode

Features

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Particularly suitable in PFC boost diode

function

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

STPSC2006CW

A1

A2

TO-247

STPSC2006CW

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j (max)

Q

C (typ)

K

A1

K

A2

2 x 10 A

600 V

175 °C

12 nC

March 2011 Doc ID 018506 Rev 1 1/7

www.st.com

7

Characteristics STPSC2006CW

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified, per

diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

FSM

I

FRM

T

Table 3. Thermal resistance

Repetitive peak reverse voltage 600

RRM

Forward rms current 18

= 115 °C, δ = 0.5 Per diode 10

T

Average forward current

Surge non repetitive forward current

c

Tc = 100 °C, δ = 0.5 Per device 20

= 10 ms sinusoidal, Tc = 25 °C

t

p

= 10 ms sinusoidal, Tc = 125 °C

t

p

= 10 µs square, Tc = 25 °C

t

p

Repetitive peak forward current δ = 0.1, Tc = 110 °C, Tj = 150 °C 40

Storage temperature range -55 to +175 °C

stg

Maximum operating junction temperature range -40 to +175 °C

T

j

40 32

160

Symbol Parameter Value Unit

V

A

Per diode 2

R

th(j-c)

Junction to case

To ta l 1 .2

R

Table 4. Static electrical characteristics per diode

Coupling 0.4

th(c)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

IR

V

1. tp = 10 ms, δ < 2%

2. tp = 500 µs, δ < 2%

current

(2)

Forward voltage drop

F

Reverse leakage

(1)

= 25 °C

T

j

= 150 °C - 210 1500

T

j

= V

V

R

RRM

Tj = 25 °C

IF = 10 A

= 150 °C - 1.6 2.1

T

j

-30150

-1.41.7

To evaluate the conduction losses use the following equation: P = 1.2 x I

Table 5. Other parameters per diode

Symbol Parameter Test conditions Typ. Unit

F(AV)

+ 0.09 x I

F2(RMS)

°C/W

µA

V

= 400 V, IF = 10 A dIF/dt = -200 A/µs

V

Total capacitive charge

Q

c

C Total capacitance V

r

T

= 150 °C

j

= 0 V, Tc = 25 °C, F = 1 Mhz 650 pF

r

2/7 Doc ID 018506 Rev 1

12 nC

STPSC2006CW Characteristics

Figure 1. Forward voltage drop versus

forward current (typical values, per diode)

I (A)

FM

20

18

16

T = 25 °C

j

T = 150 °C

j

T = 175 °C

j

V (V)

FM

14

12

10

8

6

4

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Figure 3. Peak forward current versus case

temperature (per diode)

I (A)

M

70

60

δ = 0.1

50

40

δ = 0.3

30

δ = 0.5

20

δ = 1

10

0

δ = 0.7

T (°C)

C

0 25 50 75 100 125 150 175

δ = t / T

p

T

t

p

Figure 5. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2 Single pulse

0.1

0.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

p

Figure 2. Reverse leakage current versus

reverse voltage applied (maximum values, per diode)

I (µA)

R

1.E+04

T = 175 °C

1.E+03

T = 150 °C

1.E+02

1.E+01

1.E+00

1.E-01 0 50 100 150 200 250 300 350 400 450 500 550 600

j

T = 25 °C

j

V (V)

R

Figure 4. Junction capacitance versus

reverse voltage applied (typical values, per diode)

C(pF)

500

450

400

350

300

250

200

150

100

50

0

1 10 100 1000

F = 1 MHz

V = 30 mV

osc RMS

T = 25 °C

j

V (V)

R

Figure 6. Non-repetitive peak surge forward

current versus pulse duration (sinusoidal waveform, per diode)

I (A)

FSM

1.E+03

1.E+02

T = 125 °C

C

1.E+01

1.E+00

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

T = 25 °C

C

t (s)

p

Doc ID 018506 Rev 1 3/7