ST STPSC2006CW User Manual

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600 V power Schottky silicon carbide diode

Features

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Particularly suitable in PFC boost diode

function

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

STPSC2006CW

TO-247

STPSC2006CW

Table 1. Device summary

Symbol Value

F(AV)

RRM

j (max)

C (typ)

2 x 10 A

600 V

175 °C

12 nC

March 2011 Doc ID 018506 Rev 1 1/7

www.st.com

Characteristics STPSC2006CW

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified, per

diode)

Symbol Parameter Value Unit

F(RMS)

F(AV)

FSM

FRM

Table 3. Thermal resistance

Repetitive peak reverse voltage 600

RRM

Forward rms current 18

= 115 °C, δ = 0.5 Per diode 10

Average forward current

Surge non repetitive forward current

Tc = 100 °C, δ = 0.5 Per device 20

= 10 ms sinusoidal, Tc = 25 °C

= 10 ms sinusoidal, Tc = 125 °C

= 10 µs square, Tc = 25 °C

Repetitive peak forward current δ = 0.1, Tc = 110 °C, Tj = 150 °C 40

Storage temperature range -55 to +175 °C

stg

Maximum operating junction temperature range -40 to +175 °C

40 32

160

Symbol Parameter Value Unit

Per diode 2

th(j-c)

Junction to case

To ta l 1 .2

Table 4. Static electrical characteristics per diode

Coupling 0.4

th(c)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

1. tp = 10 ms, δ < 2%

2. tp = 500 µs, δ < 2%

current

(2)

Forward voltage drop

Reverse leakage

(1)

= 25 °C

= 150 °C - 210 1500

= V

RRM

Tj = 25 °C

IF = 10 A

= 150 °C - 1.6 2.1

-30150

-1.41.7

To evaluate the conduction losses use the following equation: P = 1.2 x I

Table 5. Other parameters per diode

Symbol Parameter Test conditions Typ. Unit

F(AV)

+ 0.09 x I

F2(RMS)

°C/W

µA

= 400 V, IF = 10 A dIF/dt = -200 A/µs

Total capacitive charge

C Total capacitance V

= 150 °C

= 0 V, Tc = 25 °C, F = 1 Mhz 650 pF

2/7 Doc ID 018506 Rev 1

12 nC

STPSC2006CW Characteristics

Figure 1. Forward voltage drop versus

forward current (typical values, per diode)

I (A)

T = 25 °C

T = 150 °C

T = 175 °C

V (V)

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Figure 3. Peak forward current versus case

temperature (per diode)

I (A)

δ = 0.1

δ = 0.3

δ = 0.5

δ = 1

δ = 0.7

T (°C)

0 25 50 75 100 125 150 175

δ = t / T

Figure 5. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2 Single pulse

0.1

0.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

Figure 2. Reverse leakage current versus

reverse voltage applied (maximum values, per diode)

I (µA)

1.E+04

T = 175 °C

1.E+03

T = 150 °C

1.E+02

1.E+01

1.E+00

1.E-01 0 50 100 150 200 250 300 350 400 450 500 550 600

T = 25 °C

V (V)

Figure 4. Junction capacitance versus

reverse voltage applied (typical values, per diode)

C(pF)

500

450

400

350

300

250

200

150

100

1 10 100 1000

F = 1 MHz

V = 30 mV

osc RMS

T = 25 °C

V (V)

Figure 6. Non-repetitive peak surge forward

current versus pulse duration (sinusoidal waveform, per diode)

I (A)

FSM

1.E+03

1.E+02

T = 125 °C

1.E+01

1.E+00

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

T = 25 °C

t (s)

Doc ID 018506 Rev 1 3/7

Characteristics STPSC2006CW

Figure 7. Total capacitive charge versus dIF/dt (typical values, per diode)

Q (nC)

I = 10 A

V = 400 V

T = 150 °C

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

4/7 Doc ID 018506 Rev 1

STPSC2006CW Package information

2 Package information

● Epoxy meets UL94, V0

● Cooling method: convection (C)

● Recommended torque value: 0.55 to 1.0 N·m

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK

Table 6. TO-247 dimensions

packages, depending on their level of environmental compliance. ECOPACK®

is an ST trademark.

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 4.85 5.16 0.191 0.203

D 2.20 2.60 0.086 0.102

Dia

E 0.40 0.80 0.015 0.031

F 1.00 1.40 0.039 0.055

F1 3.00 typ. 0.118 typ.

F2 2.00 typ. 0.079 typ.

F3 1.90 2.40 0.075 0.094

F4 3.00 3.40 0.118 0.134

G 10.90 typ. 0.429 typ.

F(x3)

H 15.45 16.03 0.608 0.631

L 19.85 21.09 0.781 0.830

L1 3.70 4.30 0.146 0.169

L2 18.30 19.13 0.720 0.753

L3 14.20 20.30 0.559 0.799

L4 34.05 41.38 1.341 1.629

L5 5.35 6.30 0.211 0.248

M 2.00 3.00 0.079 0.118

V 5° typ. 5° typ.

V2 60° typ. 60° typ.

Dia. 3.55 3.65 0.140 0.144

Doc ID 018506 Rev 1 5/7

Ordering information STPSC2006CW

3 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STPSC2006CW STPSC2006CW TO-247 4.36 g 30 Tube

4 Revision history

Table 8. Document revision history

Date Revision Changes

01-Mar-2011 1 First issue.

6/7 Doc ID 018506 Rev 1

STPSC2006CW

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Doc ID 018506 Rev 1 7/7

ST STPSC2006CW User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

Table 1. Device summary

1 Characteristics

Table 3. Thermal resistance

Table 4. Static electrical characteristics per diode

Table 5. Other parameters per diode

Figure 7. Total capacitive charge versus dIF/dt (typical values, per diode)

2 Package information

Table 6. TO-247 dimensions

3 Ordering information

Table 7. Ordering information

4 Revision history

Table 8. Document revision history