ST STPSC1206 User Manual

600 V power Schottky silicon carbide diode

Features

■ No reverse recovery

■ Switching behavior independent of

temperature

■ Dedicated to PFC boost diode

STPSC1206

Description

These diodes are manufactured using silicon
carbide substrate. This wide bandgap material
supports the manufacture of a Schottky diode
structure with a high voltage rating. Such diodes
exhibit no or negligible recovery characteristics.
The recovery characteristics are independent of
the temperature.

Using these diodes will significantly reduce the
switching power losses of the associated MOS­FET, and thus increase the efficiency of the
overall application. These diodes will then
outperform the power factor correction circuit
operating in hard switching conditions.

K

TO-220AC

STPSC1206D

Table 1. Device summary

I

F(AV)

V

RRM

T

j (max)

Q

C (typ)

A

12 A

600 V

175 °C

12 nC

September 2009 Doc ID 16288 Rev 1 1/7

www.st.com

7

Characteristics STPSC1206

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

FRM

T

T

Table 3. Thermal resistance

Repetitive peak reverse voltage 600 V

Forward rms current 30 A

Average forward current Tc = 110 °C, δ = 0.5 12

t

= 10 ms sinusoidal, Tc = 25 °C

p

Surge non repetitive forward current

= 10 ms sinusoidal, Tc = 125 °C

t

p

= 10 µs square, Tc = 25 °C

t

p

Repetitive peak forward current Tc = 105 °C, Tj = 150 °C, δ = 0.1 50 A

Storage temperature range -55 to +175 °C

stg

Operating junction temperature -40 to +175 °C

j

50
40

200

Symbol Parameter Maximum value Unit

R

th(j-c)

Table 4. Static electrical characteristics

Junction to case 1.75 °C/W

Symbol Parameter Tests conditions Min. Typ. Max. Unit

(1)

I

R

V

F

1. tp = 10 ms, δ < 2%

= 500 µs, δ < 2%

2. t

p

Reverse leakage current

(2)

Forward voltage drop

Tj = 25 °C

VR = V

= 12 A

I

F

RRM

= 150 °C - 200 1500

T

j

T

= 25 °C

j

= 150 °C - 1.6 2.1

T

j

- 30 150

-1.41.7

A

A

µA

V

To evaluate the conduction losses use the following equation:
P = 1.2 x I

Table 5. Other parameters

Symbol Parameter Test conditions Typ. Unit

Q

c

C Total capacitance

2/7 Doc ID 16288 Rev 1

Total capacitive charge

+ 0.075 x I

F(AV)

F2(RMS)

V

= 400 V, IF = 12 A

r

dI

/dt = -200 A/µs, Tj = 150 °C

F

= 0 V, Tc = 25 °C, F = 1 Mhz 750

V

r

= 400 V, Tc = 25 °C, F = 1 Mhz 65

V

r

12 nC

pF

STPSC1206 Characteristics

Figure 1. Forward voltage drop versus

forward current (typical values)

IFM(A)

24

22

20

18

16

14

12

10

8

6

4

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Tj=25 °CTj=25 °C

Tj=150 °CTj=150 °C

Tj=175 °CTj=175 °C

VFM(V)

Figure 3. Peak forward current versus case

temperature

IM(A)

110

δ=0.1

100

90

80

70

60

δ=0.3

50

δ=0.5

40

30

20

d=1δ=1

10

0

d=0.7δ=0.7

TC(°C)

0 25 50 75 100 125 150 175

δ

=tp/T

T

tp

Figure 2. Reverse leakage current versus

reverse voltage applied
(maximum values)

IR(µA)

1.E+04

Tj=175 °CTj=175 °C

1.E+03

Tj=150 °CTj=150 °C

1.E+02

1.E+01

1.E+00

1.E-01

0 50 100 150 200 250 300 350 400 450 500 550 600

Tj=25 °CTj=25 °C

VR(V)

Figure 4. Junction capacitance versus

reverse voltage applied
(typical values)

C(pF)

600

500

400

300

200

100

0

1 10 100 1000

VR(V)

V

OSC

F=1 MHz

=30 mV

Tj=25 °C

RMS

Doc ID 16288 Rev 1 3/7