ST STPSC1006 User Manual

STPSC1006

600 V power Schottky silicon carbide diode

Features

■No or negligible reverse recovery

■Switching behavior independent of temperature

■Particularly suitable in PFC boost diode function

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

A

K

	TO-220AC
	STPSC1006D
	K
		A
		NC
	D2PAK
	STPSC1006G
Table 1.	Device summary
	IF(AV)		10 A
	VRRM		600 V
	Tj (max)		175 °C
	QC (typ)		12 nC

November 2010

Doc ID 16287 Rev 3

1/8

www.st.com

Characteristics

STPSC1006

1

Characteristics

Table 2.

Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

V

IF(RMS)

Forward rms current

18

A

IF(AV)

Average forward current

Tc = 115 °C, δ = 0.5

10

A

Surge non repetitive forward

tp = 10 ms sinusoidal, Tc = 25 °C

40

IFSM

tp = 10 ms sinusoidal, Tc = 125 °C

32

A

current

tp = 10 µs square, Tc = 25 °C

160

IFRM

Repetitive peak forward current

δ = 0.1, TC = 110 °C,

40

A

Tj = 150 °C

Tstg

Storage temperature range

-55 to +175

°C

Tj

Operating junction temperature

-40 to +175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

2

°C/W

Table 4.

Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

I

(1)

Reverse leakage

Tj = 25 °C

V

R

= V

RRM

-

30

150

µA

current

R

Tj = 150 °C

-

210

1500

V

(2)

Forward voltage drop

Tj = 25 °C

I

= 10 A

-

1.4

1.7

V

F

F

Tj = 150 °C

-

1.6

2.1

1. tp = 10 ms, δ < 2%

2. tp = 500 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 1.2 x IF(AV) + 0.09 x IF2(RMS)

Table 5.

Other parameters

Symbol

Parameter

Test conditions

Typ.

Unit

Qc

Total capacitive charge

Vr = 400 V, IF = 10 A

dIF/dt = -200 A/µs

12

nC

Tj = 150 °C

C

Total capacitance

Vr = 0 V, Tc = 25 °C, F = 1 Mhz

650

pF

Vr = 400 V, Tc = 25 °C, F = 1 Mhz

50

2/8	Doc ID 16287 Rev 3

STPSC1006	Characteristics
Figure 1. Forward voltage drop versus	Figure 2. Reverse leakage current versus
forward current (typical values)	reverse voltage applied
	(maximum values)

I	(A)								I	(µA)
FM								1.E+04	R
20
18														Tj=175 °C
16								1.E+03
14			Tj=25 °C			Tj=150 °C					Tj=150 °C
								1.E+02
12
10						Tj=175 °C
8								1.E+01
6
4								1.E+00
2						VFM(V)									Tj=25 °C				VR(V)
0								1.E-01
0.0		0.5	1.0	1.5	2.0	2.5	3.0		0	50	100	150	200	250	300	350	400	450	500	550	600

Figure 3. Peak forward current versus case Figure temperature

4.Junction capacitance versus reverse voltage applied (typical values)

I	(A)
M

70

		T
60	δ=0.1
	δ=tp/T	tp

50

40

δ=0.3

30 δ=0.5

20

10 δ=1 δ=0.7

TC(°C)

0

0

25

50

75

100

125

150

175

C(pF)
500
450																							F=1 MHz
																							VOSC=30 mVRMS
400																							Tj=25 °C
350
300
250
200
150
100
50											VR(V)
0
1		10									100											1000

Doc ID 16287 Rev 3

3/8