ST STPS8L30 User Manual
Main product characteristics
STPS8L30
Low drop power Schottky rectifier
I
F(AV)
V
RRM
T
j
(max) 0.40 V
V
F
Features and benefits
■ Low cost device with low drop forward voltage
for less power dissipation and reduced
8 A
30 V
150° C
K
A
NC
DPAK
STPS8L30B
K
K
NC
IPAK
STPS8L30H
heatsink
■ Optimized conduction/reverse losses trade-off
which leads to the highest yield in the
application
■ High power surface mount miniature package
■ Avalanche capability specified
Description
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC
Order codes
Part Numbers Marking
STPS8L30B LS30
STPS8L30B-TR LS30
STPS8L30H STPS8L30H
converters.
Packaged in DPAK and IPAK, this device is
especially intended for use as a Rectifier at the
secondary of 3.3 V SMPS or DC/DC units.
wheeling and polarity protection applications.
Table 1. Absolute Ratings (limiting values)
Symbol Parameter Value Unit
A
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
T
Repetitive peak reverse voltage 30 V
RMS forward voltage 7 A
Average forward current Tc = 135° C δ = 0.5 8 A
Surge non repetitive forward current tp = 10 ms sinusoidal 75 A
Peak repetitive reverse current tp = 2 µs F = 1 kHz square 1 A
Non repetitive peak reverse current tp = 100 µs square 2 A
Repetitive peak avalanche power tp = 1 µs Tj = 25° C 3000 W
Storage temperature range -65 to + 150 °C
Maximum operating junction temperature
j
(1)
150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
1. thermal runaway condition for a diode on its own heatsink
--------------dTj
1
----------------- --------->
Rth j a–()
March 2006 Rev 4 1/7
www.st.com
7
Characteristics STPS8L30
1 Characteristics
Table 2. Thermal Parameters
Symbol Parameter Value Unit
R
th(j-c)
Table 3. Static Electrical Characteristics
Junction to case 2.5 °C/W
Symbol Parameter Tests conditions Min. Typ Max. Unit
I
R
VF
= 25° C
(1)
Reverse leakage current
j
= 100° C 15 40
T
j
= V
V
R
RRM
Tj = 25° C
= 8 A
I
F
= 16 A
I
F
(1)
Forward voltage drop
T
= 125° C 0.35 0.40
j
T
= 25° C
j
T
= 125° C 0.448 0.57
j
1
0.49
0.63
T
1. Pulse test:* tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.23 x I
Figure 1. Average forward power
dissipation versus average
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
+ 0.021 I
F(AV)
forward current
mA
V
F2(RMS)
P (W)
F(AV)
5.0
4.0
3.0
2.0
1.0
0.0
δ = 0.05
0246810
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
I (A)
F(AV)
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125 150
R=R
th(j-a) th(j-c)
R =70°C/W
th(j-a)
T (°C)
amb
2/7
STPS8L30 Characteristics
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 5. Non repetitive surge peak
forward current versus overload
duration (maximum values)
I (A)
M
120
100
80
60
40
IM
20
0
t
δ=0.5
1E-3 1E-2 1E-1 1E+0
t(s)
T =25°C
T =75°C
T =125°C
c
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z/R
th(j-c) th(j-c)
1.0
0.8
c
c
0.6
δ = 0.5
0.4
δ = 0.2
δ = 0.1
0.2
t (s)
Single pulse
0.0
1E-4 1E-3 1E-2 1E-1 1E+0
p
δ
T
=tp/T
tp
Figure 7. Reverse leakage current versus
reverse voltage applied (typical
values)
I (mA)
R
3E+2
1E+2
1E+1
1E+0
1E-1
1E-2
1E-3
0 5 10 15 20 25 30
T=150°C
j
T=125°C
j
T=25°C
j
V (V)
R
Figure 8. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
2000
1000
500
200
V (V)
100
11040
R
3/7
F=1MHz
V =30mV
OSC RMS
T=25°C
j
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