ST STPS80H100TV User Manual
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTI CS
STPS80H100TV
I
F(AV)
V
RRM
2 x 40 A
100 V
Tj (max) 150 °C
(max) 0.65 V
V
F
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRE NT
GOOD TRADE OFF BET WEEN LEA KAGE CUR-
RENT AND FORWARD VOLTAGE DROP
AVALANCHE R ATE D
LOW INDUCTANCE PAC KAGE
INSULATED PACKAGE :
Insulated voltage = 2500 V
(RMS)
Capacitance = 45 pF
DESCRIPTION
High voltage dual Schottky barrier rectifier
designed for high frequency telecom and
computer Switched Mode Power Supplies
and o ther power conv erters .
K2K1A2
A1
ISOTOP
TM
Packaged in ISOTOP, this device is intended for
use in medium voltage operation, and particularly, in high frequency circuitries where low
switching loss es a nd low nois e are requir ed.
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
Tj Maximum operating junction temperature * 150
Repetitive peak reverse voltage 100 V
RMS forward current 125 A
Average forward current Tc = 120° C
δ
= 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10 ms sinusoidal 700 A
Repetitive peak reverse current tp = 2 µs square F = 1kHz 2 A
Non repetitive peak reverse current tp = 100 µs square 5 A
Storage temperature range - 55 to + 1 50°C
stg
40
80
°
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
* :
July 1999 - Ed: 3A
dTj
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
A
C
1/4
STPS80H100TV
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junction to case Per leg 1
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
Total 0.55
Coupling
0.1
°
C/W
STATIC ELECTRICAL CHARACTE RISTICS
(per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
* Reverse leakage current Tj = 25°CV
I
R
= V
R
RRM
20
Tj = 125°C725mA
** Forward voltage drop Tj = 25°CI
V
F
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the fol lowing equa tion :
P = 0.56 x I
Fig. 1:
+ 0.0022 x I
F(AV)
F2(RMS)
Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40 45 50
δ = 0.05
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
= 40 A 0.78 V
F
= 40 A 0.61 0.65
F
= 80 A 0.89
F
= 80 A 0.7 0.74
F
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5, per diode).
IF(av)(A)
50
45
40
35
30
25
20
15
10
5
0
Rth(j-a)=5°C/W
T
=tp/T
δ
0 25 50 75 100 125 150
tp
Rth(j-a)=Rth(j-c)
Tamb(°C)
µ
A
2/4
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