ST STPS80H100TV User Manual
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STPS80H100TV |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV) |
2 x 40 A |
VRRM |
100 V |
Tj (max) |
150 °C |
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VF (max) |
0.65 V |
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FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
LOW INDUCTANCE PACKAGE
INSULATED PACKAGE :
Insulated voltage = 2500 V(RMS)
Capacitance = 45 pF
K2 A2
K1 A1
ISOTOPTM
DESCRIPTION
High voltage dual Schottky barrier rectifier designed for high frequency telecom and computer Switched Mode Power Supplies and other power converters.
ABSOLUTE RATINGS (limiting values, per diode)
Packaged in ISOTOP, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses and low noise are required.
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Parameter |
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Value |
Unit |
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VRRM |
Repetitive peak reverse voltage |
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100 |
V |
IF(RMS) |
RMS forward current |
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125 |
A |
IF(AV) |
Average forward current |
Tc = 120°C |
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Per diode |
40 |
A |
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δ = 0.5 |
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Per device |
80 |
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IFSM |
Surge non repetitive forward current |
tp = 10 ms sinusoidal |
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700 |
A |
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IRRM |
Repetitive peak reverse current |
tp = 2 μs square F = 1kHz |
2 |
A |
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IRSM |
Non repetitive peak reverse current |
tp = 100 μs square |
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5 |
A |
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Tstg |
Storage temperature range |
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- 55 to + 150 |
°C |
Tj |
Maximum operating junction temperature * |
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150 |
°C |
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dV/dt |
Critical rate of rise of reverse voltage |
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10000 |
V/μs |
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* : dPtot |
< |
1 |
thermal runaway condition for a diode on its own heatsink |
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Rth(j−a) |
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dTj |
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July 1999 - Ed: 3A |
1/4 |
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STPS80H100TV
THERMAL RESISTANCES
Symbol |
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Parameter |
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Value |
Unit |
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Rth (j-c) |
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Junction to case |
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Per leg |
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1 |
°C/W |
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Total |
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0.55 |
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Rth (c) |
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Coupling |
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0.1 |
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When the diodes 1 and 2 are used simultaneously : |
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Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) |
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STATIC ELECTRICAL CHARACTERISTICS (per diode) |
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Symbol |
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Parameter |
Tests Conditions |
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Min. |
Typ. |
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Max. |
Unit |
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IR * |
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Reverse leakage current |
Tj = 25°C |
VR = VRRM |
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20 |
μA |
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Tj = 125°C |
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7 |
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25 |
mA |
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VF ** |
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Forward voltage drop |
Tj = 25°C |
IF = 40 A |
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0.78 |
V |
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Tj = 125°C |
IF = 40 A |
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0.61 |
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0.65 |
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Tj = 25°C |
IF = 80 A |
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0.89 |
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Tj = 125°C |
IF = 80 A |
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0.7 |
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0.74 |
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Pulse test : * tp = 5 ms, δ < 2% ** tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.56 x IF(AV) + 0.0022 x IF2(RMS)
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) |
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35 |
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δ = 0.1 |
δ = 0.2 |
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δ = 0.5 |
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30 |
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δ = 0.05 |
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25 |
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20 |
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δ = 1 |
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15 |
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10 |
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T |
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5 |
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IF(av) (A) |
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δ=tp/T |
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tp |
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0 |
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5 |
10 |
15 |
20 |
25 |
30 |
35 |
40 |
45 |
50 |
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0 |
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Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode).
IF(av)(A) |
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50 |
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45 |
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Rth(j-a)=Rth(j-c) |
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40 |
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35 |
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30 |
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25 |
Rth(j-a)=5°C/W |
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20 |
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15 |
T |
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10 |
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5 |
δ=tp/T |
tp |
Tamb(°C) |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
0 |
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