dV/dtCritical rate of rise of reverse voltage10000V/µs
<
Rth(j-a)
1
dPtot
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 3.Thermal resistance
SymbolParameterValueUnit
R
R
Junction to case
th(j-c)
Coupling0.3
th(c)
Per diode
To t al
0.7
0.5
°C/W
When the diodes 1 and 2 are used simultaneously :
A
ΔTj(diode 1) = P(diode1) x R
Table 4.Static electrical characteristics
(Per diode) + P(diode 2) x R
th(j-c)
SymbolParameterTest conditionsMin.Typ.Max.Unit
= 25 °C
T
Reverse leakage
(1)
I
R
current
(2)
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
F
j
= 125 °C720mA
T
j
= 25 °CIF = 40 A0.8
T
j
T
= 125 °CIF = 40 A0.650.7
j
T
= 25 °CIF = 80 A0.94
j
= 125 °CIF = 80 A0.790.84
T
j
V
To evaluate the conduction losses use the following equation:
P = 0.5 x I
2/7Doc ID 6727 Rev 3
F(AV)
+ 0.0055 I
F2(RMS)
R
= V
th(c)
20µA
RRM
V
STPS80H100CCharacteristics
/
Figure 1.Average forward power dissipation
versus average forward current
(per diode)
PF(av)(W)
35
30
25
20
δ = 0.2
δ = 0.1
δ = 0.05
δ = 0.5
δ = 1
15
δ
=tp/T
T
tp
10
5
0
05101520253035404550
IF(av) (A)
Figure 3.Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P(1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.011
10100
p
1000
Figure 5.Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 2.Average forward current versus
ambient temperature
(δ = 0.5, per diode)
IF(av)(A)
50
45
40
Rth(j-a)=Rth(j-c)
35
30
25
20
15
Rth(j-a)=5°C/W
T
10
5
δ
0
0255075100125150175
=tp/T
tp
Tam b( °C )
Figure 4.Normalized avalanche power
derating versus junction
temperature
P(T)
ARM j
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
T (°C)
0
255075100125
j
Figure 6.Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
150
Rth(j-c)
IM(A)
500
400
300
Tc=50°C
Tc=75°C
200
IM
100
0
1E-31E-21E-11E+0
δ=0.5
t
t(s)
Tc=110°C
Zth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
0.0
1E-31E-21E-11E+0
tp(s)
δ
=tp/T
T
tp
Doc ID 6727 Rev 33/7
CharacteristicsSTPS80H100C
Figure 7.Reverse leakage current versus
1E+4
reverse voltage applied
(typical values, per diode)
IR(µA)
Tj=125°C
Figure 8.Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(nF)
5.0
1E+3
1E+2
1.0
1E+1
1E+0
1E-1
0 102030405060708090100
Tj=25°C
VR(V)
0.1
VR(V)
125102050100
Figure 9.Forward voltage drop versus forward current (maximum value, per diode)
IFM(A)
500
100
10
Tj=125°C
Tj=25°C
F=1MHz
Tj=25°C
1
VFM(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
4/7Doc ID 6727 Rev 3
STPS80H100CPackage information
2 Package information
●Epoxy meets UL94, V0
●Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
Table 5.Max247 dimensions
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
.
Dimensions
Ref.
MillimetersInches
Min.Max.Min.Max.
EA
A4.705.300.1850.209
A12.202.600.0870.102
b1.001.400.0380.055
D
b12.002.400.0790.094
b23.003.400.1180.133
c0.400.800.0160.031
L1
L
A1
b1
b2
D19.7020.300.7760.799
e5.355.550.2110.219
E15.3015.900.6020.626
bc
e
L14.2015.200.5590.598
L13.704.300.1460.169
Doc ID 6727 Rev 35/7
Ordering informationSTPS80H100C
3 Ordering information
Table 6.Ordering information
Order codeMarkingPackageWeightBase qtyDelivery mode
STPS80H100CYSTPS80H100CYMax2474.4 g30Tube
4 Revision history
Table 7.Document revision history
DateRevisionChange
July-20032BLast release.
21-Jun-20103
Updated package illustration on page 1 and Section 2: Package
information on page 5.
6/7Doc ID 6727 Rev 3
STPS80H100C
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