ST STPS80H100C User Manual

STPS80H100C

High voltage power Schottky rectifier

Features

■High reverse voltage

■Negligible switching losses

■Low forward voltage drop

■Low leakage current

■High temperature

■Low thermal resistance

■Avalanche capability specified

Description

Dual center tap Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters.

Packaged in Max247, this device is intended for use in high frequency computer and telecom converters.

A1

K

A2

		A2
		K
		A1
		Max247
		STPS80H100CY
j	Device summary
Table 1.
	Symbol	Value
	IF(AV)	2 x 40 A
	VRRM	100 V
	Tj (max)	175 °C
	VF(max)	0.70 V

June 2010

Doc ID 6727 Rev 3

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www.st.com

Characteristics	STPS80H100C

1 Characteristics

Table 2.		Absolute ratings (limiting values, per diode)
Symbol				Parameter				Value	Unit
VRRM		Repetitive peak reverse voltage						100	V
IF(RMS)		Forward rms current						50	A
IF(AV)		Average forward current				Tc = 155 °C	Per diode	40	A
						δ = 0.5	Per device	80
IFSM		Surge non repetitive forward current				tp = 10 ms sinusoidal		400	A
IRRM		Repetitive peak reverse current				tp = 2 µs, F= 1 kHz		2	A
PARM		Repetitive peak avalanche power				tp = 1 µs, Tj = 25 °C		39200	W
Tstg		Storage temperature range						-65 to + 175	°C
Tj		Maximum operating junction temperature(1)						175	°C
dV/dt		Critical rate of rise of reverse voltage						10000	V/µs
1. dPtot <		1		condition to avoid thermal runaway for a diode on its own heatsink
		Rth(j-a)
dTj
Table 3.		Thermal resistance
Symbol				Parameter				Value	Unit
Rth(j-c)		Junction to case					Per diode	0.7
							Total	0.5	°C/W
Rth(c)		Coupling						0.3

When the diodes 1 and 2 are used simultaneously :

Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 4.	Static electrical characteristics
Symbol	Parameter	Test conditions		Min.	Typ.	Max.	Unit
IR(1)	Reverse leakage	Tj = 25 °C	VR = VRRM			20	µA
	current	Tj = 125 °C			7	20	mA
		Tj = 25 °C	IF = 40 A			0.8
VF(2)	Forward voltage drop	Tj = 125 °C	IF = 40 A		0.65	0.7	V
		Tj = 25 °C	IF = 80 A			0.94
		Tj = 125 °C	IF = 80 A		0.79	0.84

1.Pulse test: tp = 5 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.5 x IF(AV) + 0.0055 IF2(RMS)

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STPS80H100C	Characteristics
Figure 1. Average forward power dissipation Figure 2.	Average forward current versus
versus average forward current	ambient temperature
(per diode)	(δ = 0.5, per diode)

PF(av)(W)											IF(av)(A)
35							δ = 0.5			50
										45
30				δ = 0.2											Rth(j-a)=Rth(j-c)
										40
25			δ = 0.1						δ = 1
										35
		δ = 0.05
20										30
										25
15
										20			Rth(j-a)=5°C/W
10									T	15		T
5										10
				IF(av) (A)				δ=tp/T	tp	5		δ=tp/T	tp	Tamb(°C)
0	5	10	15	20	25	30	35	40	45	0	0	25	50	75	100	125	150	175
0										50

Figure 3. Normalized avalanche power	Figure 4. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

	PARM(tp)						PARM(Tj)
	PARM(1µs)
							PARM(25 °C)
	1						1.2
							1
	0.1						0.8
							0.6
	0.01						0.4
							0.2
						tp(µs)	0					T(°C)j
	0.001											150
						1000	25	50	75	100	125
	0.01	0.1	1	10	100

Figure 5. Non repetitive surge peak forward Figure 6.	Relative variation of thermal
current versus overload duration	impedance junction to case versus
(maximum values, per diode)	pulse duration (per diode)

IM(A)					Zth(j-c)/Rth(j-c)
500				1.0
400		Tc=50°C		0.8
300		Tc=75°C		0.6	δ = 0.5
200				0.4	δ = 0.2
IM		Tc=110°C			δ = 0.1			T
				0.2
100	t
		t(s)			Single pulse	tp(s)
	δ=0.5						δ=tp/T	tp
0				0.0
	1E-2	1E-1	1E+0			1E-2	1E-1	1E+0
1E-3				1E-3

Doc ID 6727 Rev 3

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