ST STPS80H100C User Manual

STPS80H100C

High voltage power Schottky rectifier

Features

■ High reverse voltage

■ Negligible switching losses

■ Low forward voltage drop

■ Low leakage current

■ High temperature

■ Low thermal resistance

■ Avalanche capability specified

Description

Dual center tap Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters.

Packaged in Max247, this device is intended for use in high frequency computer and telecom converters.

A1

A2

A1

Max247

STPS80H100CY

j

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(max) 175 °C

T

j

(max) 0.70 V

V

F

K

A2

K

2 x 40 A

100 V

June 2010 Doc ID 6727 Rev 3 1/7

www.st.com

7

Characteristics STPS80H100C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

T

Repetitive peak reverse voltage 100 V

RRM

Forward rms current 50 A

Average forward current

Surge non repetitive forward current tp = 10 ms sinusoidal 400 A

FSM

Repetitive peak reverse current tp = 2 µs, F= 1 kHz 2 A

RRM

Repetitive peak avalanche power tp = 1 µs, Tj = 25 °C 39200 W

ARM

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

Tc = 155 °C δ = 0.5

(1)

Per diode Per device

40 80

175 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

<

Rth(j-a)

1

dPtot

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance

Symbol Parameter Value Unit

R

Junction to case

th(j-c)

Coupling 0.3

th(c)

Per diode To t al

0.7

0.5

°C/W

When the diodes 1 and 2 are used simultaneously :

A

ΔTj(diode 1) = P(diode1) x R

Table 4. Static electrical characteristics

(Per diode) + P(diode 2) x R

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 25 °C

T

Reverse leakage

(1)

I

R

current

(2)

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

F

j

= 125 °C 7 20 mA

T

j

= 25 °C IF = 40 A 0.8

T

j

T

= 125 °C IF = 40 A 0.65 0.7

j

T

= 25 °C IF = 80 A 0.94

j

= 125 °C IF = 80 A 0.79 0.84

T

j

V

To evaluate the conduction losses use the following equation: P = 0.5 x I

2/7 Doc ID 6727 Rev 3

F(AV)

+ 0.0055 I

F2(RMS)

R

= V

th(c)

20 µA

RRM

V

STPS80H100C Characteristics

/

Figure 1. Average forward power dissipation

versus average forward current (per diode)

PF(av)(W)

35

30

25

20

δ = 0.2

δ = 0.1

δ = 0.05

δ = 0.5

δ = 1

15

δ

=tp/T

T

tp

10

5

0

0 5 10 15 20 25 30 35 40 45 50

IF(av) (A)

Figure 3. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

10 100

p

1000

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values, per diode)

Figure 2. Average forward current versus

ambient temperature (δ = 0.5, per diode)

IF(av)(A)

50 45 40

Rth(j-a)=Rth(j-c)

35 30 25 20 15

Rth(j-a)=5°C/W

T

10

5

δ

0

0 25 50 75 100 125 150 175

=tp/T

tp

Tam b( °C )

Figure 4. Normalized avalanche power

derating versus junction temperature

P(T)

ARM j

P (25 °C)

ARM

1.2

1

0.8

0.6

0.4

0.2

T (°C)

0

25 50 75 100 125

j

Figure 6. Relative variation of thermal

impedance junction to case versus pulse duration (per diode)

150

Rth(j-c)

IM(A)

500

400

300

Tc=50°C

Tc=75°C

200

IM

100

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=110°C

Zth(j-c)

1.0

0.8

δ = 0.5

0.6

δ = 0.2

0.4

δ = 0.1

0.2

Single pulse

0.0 1E-3 1E-2 1E-1 1E+0

tp(s)

δ

=tp/T

T

tp

Doc ID 6727 Rev 3 3/7