ST STPS80170C User Manual

®
d
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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
T
j
(max)
V
F
FEATURES AND BENEFITS
High junction temperature capability
Low leakage current
Good trade off between leakage current and
forward voltage drop
Low thermal resistance
High frequency operation
Avalanche specification
DESCRIPTION
Dual center tab Schottky rectifier suited for High Frequency Switched Mode Power Supplies. Packaged in TO-247, this device is intended for use to enhance the reliability of the application.
2 x 40 A
175 °C
0.74 V
STPS80170C
A1
K
A2
A2
K
A1
TO-247
STPS80170CW
Table 2: Order Code
Part Number Marking
STPS80170CW STPS80170CW
Table 3: Absolute Ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
T
Repetitive peak reverse voltage 170 V
RMS forward current 80 A
T
Average forward current
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature * 175 °C
j
= 150 °C δ = 0.5
c
t
= 10 ms sinusoidal
p
t
= 1 µs Tj = 25 °C
p
Per diode Per device
38200 W
40 80
500 A
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Ptot
--------------
* : thermal runaway condition for a diode on its own heatsink
dTj
September 2005
1
-------------- ------------
<
Rth j a()
REV. 1
A
1/6
STPS80170C
Table 4: Thermal Parameters
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x R
Junction to case
th(j-c)
(Per diode) + P(diode 2) x R
Per diode Total
Coupling
th(c)
0.7
0.5
0.3
Table 5: Static Electrical Characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ Max. Unit
= 25 °C
T
I
*
R
V
F
Pulse test: * tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.62 x I
Reverse leakage current
**
Forward voltage drop
** tp = 380 µs,
δ < 2%
j
= 125 °C
T
j
T
= 25 °C
j
= 125 °C
T
j
T
= 25 °C
j
T
= 125 °C
j
V
R
I
F
I
F
= V
RRM
= 40 A
= 80 A
F(AV)
+ 0.003 I
20 80 mA
0.80 0.84
0.68 0.74
0.90 0.96
0.80 0.86
F2(RMS)
80 µA
°C/W
V
2/6
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