ST STPS80150CW User Manual
®
STPS80150CW
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x40A
150 V
Tj (max) 175°C
(max) 0.74 V
V
F
FEATURES AND BENEFITS
HIGHJUNCTIONTEMPERATURECAPABILITY
■
LOW LEAKAGE CURRENT
■
GOOD TRADE OFF BETWEEN LEAKAGE
■
CURRENT AND FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
■
■ HIGH FREQUENCY OPERATION
DESCRIPTION
Dual center tap Schottky rectifiers suited for high
frequency switch mode power supply.
Packaged in TO-247, this devices is intended for
use to enhance the reliability of the application.
ABSOLUTE RATINGS (limiting values, per diode)
A1
A2
TO-247
A1
K
A2
K
Symbol Parameter Value Unit
V
I
*:
RRM
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
Tj
dV/dt
dPtot
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 150°C
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak avalanche power tp = 1µs Tj = 25°C
stg
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
dTj Rth j a
October 2003 - Ed: 1A
Per diode
δ = 0.5
Per device
thermal runaway condition for a diode on its own heatsink
−1()
150 V
80 A
40
80
500 A
38200 W
- 65 to + 175 °C
175 °C
10000 V/µs
A
1/4
STPS80150CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th(j-c)
th(j-c)
Junction to case
Junction to case
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
V
F
Reverse leakage
current
*
Forward voltage drop Tj =25°CI
Tj = 25°C VR=V
Tj = 125°C
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
Pulse test : *tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation:
P=0.62xI
F(AV)
+ 0.003 I
F2(RMS)
Per diode
Total
0.7
0.5
Coupling 0.3 °C/W
th(c)
RRM
530µA
620mA
=40A
F
=40A
F
=80A
F
=80A
F
0.8 0.84 V
0.68 0.74
0.9 0.96
0.8 0.86
°C/W
Fig. 1: Conduction losses versus average current
(per diode).
P (W)
F(AV)
40
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
δ = 0.05
δ = 0.1
I (A)
F(AV)
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40 45 50
Fig. 3: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Fig. 2: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 4: Average forward current versus ambient
temperature (δ=0.5, per diode).
I (A)
F(AV)
45
40
35
30
25
20
15
δ
=tp/T
T
tp
10
5
0
0 25 50 75 100 125 150 175
R=R
th(j-a) th(j-c)
R =15°C/W
th(j-a)
T (°C)
amb
2/6
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