ST STPS640C User Manual

STPS640C

Power Schottky rectifier

Main product characteristics

I

F(AV)

V

RRM

T

(max) 150° C

j

(max) 0.57 V

V

F

2 x 3 A

40 V

Features and benefits

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low forward drop voltage

■ Low capacitance

■ Low thermal resistance

■ Insulated package: TO-220FPAB

Insulating voltage = 2000 V DC Capacitance = 12 pF

■ Avalanche capability specified

A1

K

A2

K

A2

A1

DPAK

STPS640CB

TO-220AB

STPS640CT

A2

K

A1

A2

K

TO-220FPAB

STPS640CFP

Description

Dual Schottky rectifier suited to Switch Mode Power Supplies and other Power Converters.

This device is intended for use in low and medium voltage operation, and particulary, in high frequency circuitries where low switching losses are required (free wheeling and polarity protection).

March 2007 Rev 7 1/9

www.st.com

9

Characteristics STPS640C

1 Characteristics

Table 1. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

T

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

Table 2. Thermal resistances

Symbol Parameter Value Unit

Repetitive peak reverse voltage 40 V

RRM

RMS forward voltage

Average forward current δ = 0.5

Surge non repetitive forward

FSM

current

Repetitive peak reverse current tp = 2 µs square F = 1 kHz 1 A

RRM

Repetitive peak avalanche power tp = 1 µs Tj = 25° C 1300 W

ARM

Storage temperature range -65 to + 150 ° C

stg

Maximum operating junction temperature 150 ° C

T

j

TO-220AB /TO-220FPAB 10

DPAK 6

TO-220AB T

DPAK T

= 10 ms Sinusoidal 75 A

t

p

= 135° C

c

= 130° C

c

= 120° C

c

A

3ATO-220FPAB T

R

th (j-c)

R

Junction to case

Coupling

)

th(c

TO-220AB / DPAK

TO-220FPAB

Per diode To t al

TO-220AB 0.5

TO-220FPAB 3

5.5 3

5.5

5.2

°C/W

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x R

Table 3. Static electrical characteristics (per diode)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1)

I

V

1. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

R

(1)

Forward voltage drop

F

(Per diode) + P(diode 2) x R

th(j-c)

= 25° C

T

j

= 125° C 2 10 mA

T

j

V

Tj = 25° C IF = 3 A 0.63

= 25° C IF = 6 A 0.84

T

j

= 125° C IF = 3 A 0.5 0.57

T

j

= 125° C IF = 6 A 0.67 0.72

T

j

R

= V

th(c)

100 µA

RRM

To evaluate the conduction losses use the following equation: P = 0.42 x I

F(AV)

+ 0.050 I

F2(RMS)

V

2/9

STPS640 Characteristics

Figure 1. Average forward power

dissipation versus average forward current (per diode)

P (W)

F(AV)

2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.25

0.00

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 5. Non repetitive surge peak forward

current versus overload duration. (Maximum values, per diode) (TO-220AB / DPAK)

Figure 2. Average forward current versus

ambient temperature (

δ = 0.5, per diode)

I (A)

F(AV)

4.0

3.5

3.0

2.5

2.0

1.5

δ

=tp/T

T

tp

1.0

0.5

0.0 0 25 50 75 100 125 150

R=R

th(j-a) th(j-c)

T (°C)

amb

TO-220FPAB

R =15°C/W

th(j-a)

TO-220AB / DPAK

Figure 4. Normalized avalanche power

derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 6. Non repetitive surge peak forward

current versus overload duration. (Maximum values, per diode) (TO-220FPAB)

I (A)

M

45

40

35

30

25

20

15

10

IM

5

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

T =75°C

C

T =100°C

C

T =135°C

C

I (A)

M

40

35

30

25

20

15

10

IM

5

0 1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

T =75°C

C

T =100°C

C

T =130°C

C

3/9