ST STPS61L60C User Manual
STPS61L60C
Power Schottky rectifier
Features
■High current capability
■Avalanche rated
■Low forward voltage drop current
■High frequency operation
Description
This dual center tap schottky rectifier is suited for high frequency switch mode power supplies.
Packaged in TO-247 and TO-220AB, this device provides desktop SMPS designers with a low forward voltage drop device, and reduced leakage current, with the objective of making the application compliant with environmental care standards, or suitable for 80+ requirements.
Table 1. |
Device summary |
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IF(AV) |
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2 x 30 A |
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VRRM |
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60 V |
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Tj (max) |
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150 °C |
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VF(typ) |
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0.560 V |
A1 
K
A2 
K
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A2 |
K |
A2 |
K |
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A1 |
A1 |
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TO-247 |
TO-220AB |
STPS61L60CW STPS61L60CT
Figure 1. Electrical characteristics (a)
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I |
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I |
"Forward" |
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2 x IO |
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IF |
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IO |
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VRRM |
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VAR |
VR |
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V |
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IR |
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VTo VF(Io) |
VF |
VF(2xIo) |
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"Reverse" |
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IAR |
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a. VARM and IARM must respect the reverse safe operating area defined in Figure 12 VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF, are static characteristics
June 2010 |
Doc ID 15641 Rev 2 |
1/9 |
www.st.com
Characteristics |
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STPS61L60C |
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1 |
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Characteristics |
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Table 2. |
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Absolute ratings (limiting values per diode at 25 °C unless otherwise specified) |
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Symbol |
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Parameter |
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Value |
Unit |
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VRRM |
Repetitive peak reverse voltage |
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60 |
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IF(RMS) |
Forward rms voltage |
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50 |
A |
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IF(AV) |
Average forward current δ = 0.5 |
Tc = 125 °C |
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Per diode |
30 |
A |
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Tc = 120 °C |
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Per device |
60 |
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I |
FSM |
Surge non repetitive forward current |
t = 10 ms sinusoidal |
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T0-247 |
530 |
A |
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p |
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T0-220AB |
400 |
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PARM |
Repetitive peak avalanche power |
tp = 1 µs |
Tj = 25 °C |
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11500 |
W |
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(1) |
Maximum repetitive peak avalanche |
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VARM |
voltage |
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tp < 1 µs |
Tj < 150 °C, IAR < 43 A |
80 |
V |
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(1) |
Maximum single pulse peak |
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VASM |
avalanche voltage |
tp < 1 µs |
Tj < 150 °C, IAR < 43 A |
80 |
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Tstg |
Storage temperature range |
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-65 to + 175 |
°C |
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Tj |
Maximum operating junction temperature (2) |
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150 |
°C |
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1. Refer to Figure 12 |
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2. dPtot < |
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condition to avoid thermal runaway for a diode on its own heatsink |
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Rth(j-a) |
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dTj |
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Table 3. |
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Thermal resistances |
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Symbol |
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Parameter |
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Value |
Unit |
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TO-247 |
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Per diode |
0.95 |
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Total |
0.6 |
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Rth(j-c) |
Junction to case |
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TO-220AB |
Per diode |
1.1 |
°C/W |
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Total |
0.7 |
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Rth(c) |
Coupling |
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TO-247 |
0.25 |
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TO-220AB |
0.3 |
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When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c).
2/9 |
Doc ID 15641 Rev 2 |
STPS61L60C |
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Characteristics |
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Table 4. |
Static electrical characteristics (per diode) |
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Symbol |
Parameter |
Test conditions |
Min. |
Typ. |
Max. |
Unit |
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I (1) |
Reverse leakage current |
Tj = 25 °C |
V |
R |
= V |
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0.8 |
mA |
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R |
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Tj = 125 °C |
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RRM |
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150 |
350 |
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Tj = 25 °C |
IF = 5 A |
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0.360 |
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Tj = 125 °C |
IF = 5 A |
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0.255 |
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VF(2) |
Forward voltage drop |
Tj = 25 °C |
IF = 15 A |
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0.460 |
0.540 |
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Tj = 125 °C |
IF = 15 A |
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0.415 |
0.480 |
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Tj = 25 °C |
IF = 30 A |
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0.580 |
0.660 |
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Tj = 125 °C |
IF = 30 A |
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0.560 |
0.620 |
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1.Pulse test: tp = 5 ms, δ < 2%
2.Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.44 x IF(AV) + 0.006 x IF2(RMS)
Figure 2. Average forward power dissipation Figure 3. |
Average forward current vs. |
vs. average forward current |
ambient temperature |
(per diode) |
(δ = 0.5, per diode) |
PF(av)(W)
30 |
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δ=0.5 |
δ=1 |
25 |
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δ=0.2 |
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δ=0.1 |
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20 |
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δ=0.05 |
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15 |
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10 |
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T |
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5 |
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IF(av) (A) |
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δ=tp/T |
tp |
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0 |
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0 |
5 |
10 |
15 |
20 |
25 |
30 |
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40 |
IF(av)(A)
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Rth(j-a)=Rth(j-c)
30
TO-220AB TO-247
25
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15 |
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Rth(j-a)=15 °C/W |
10 |
T |
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5 |
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δ=tp/T |
tp |
Tamb(°C) |
0
0 |
25 |
50 |
75 |
100 |
125 |
150 |
Figure 4. Normalized avalanche power |
Figure 5. Normalized avalanche power |
derating vs. pulse duration |
derating vs. junction temperature |
PARM(tp) |
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PARM(Tj ) |
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PARM(1µs) |
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PARM(25 °C) |
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1 |
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1.2 |
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1 |
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0.1 |
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0.8 |
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0.6 |
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0.01 |
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0.4 |
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0.2 |
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Tj(°C) |
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tp(µs) |
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0.001 |
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0 |
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0.01 |
0.1 |
1 |
10 |
100 |
1000 |
25 |
50 |
75 |
100 |
125 |
150 |
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Doc ID 15641 Rev 2 |
3/9 |
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