ST STPS61L60C User Manual
STPS61L60C
Power Schottky rectifier
Features
■ High current capability
■ Avalanche rated
■ Low forward voltage drop current
■ High frequency operation
Description
This dual center tap schottky rectifier is suited for
high frequency switch mode power supplies.
Packaged in TO-247 and TO-220AB, this device
provides desktop SMPS designers with a low
forward voltage drop device, and reduced leakage
current, with the objective of making the
application compliant with environmental care
standards, or suitable for 80+ requirements.
Table 1. Device summary
I
F(AV)
V
RRM
(max) 150 °C
T
j
(typ) 0.560 V
V
F
2 x 30 A
60 V
A1
K
A2
K
A2
K
A1
TO-247
STPS61L60CW
TO-220AB
STPS61L60CT
Figure 1. Electrical characteristics
2 x I
I
"Forward"
F(Io)
X
X
V
F
O
I
F
I
O
I
R
V
V
To
V
I
V
RRM
V
V
AR
R
"Reverse"
V
F(2xIo)
A1
(a)
A2
K
V
I
AR
a. V
ARM
and I
must respect the reverse safe
ARM
operating area defined in Figure 12 V
pulse measurements (t
are static characteristics
< 1 µs). VR, IR, V
p
and IAR are
AR
RRM
June 2010 Doc ID 15641 Rev 2 1/9
and VF,
www.st.com
9
Characteristics STPS61L60C
1 Characteristics
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
P
V
ARM
V
ASM
T
1. Refer to Figure 12
2. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistances
Repetitive peak reverse voltage 60 V
RRM
Forward rms voltage 50 A
= 125 °C
T
Average forward current δ = 0.5
Surge non repetitive forward current tp = 10 ms sinusoidal
FSM
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 11500 W
ARM
Maximum repetitive peak avalanche
(1)
voltage
Maximum single pulse peak
(1)
avalanche voltage
Storage temperature range -65 to + 175 °C
stg
T
Maximum operating junction temperature
j
<
Rth(j-a)
1
dPtot
dTj
c
= 120 °C
T
c
t
< 1 µs Tj < 150 °C, IAR < 43 A 80 V
p
< 1 µs Tj < 150 °C, IAR < 43 A 80 V
t
p
(2)
Per diode
Per device
T0-247
T0-220AB
30
60
530
400
150 °C
Symbol Parameter Value Unit
A
A
R
R
th(j-c)
th(c)
Junction to case
Coupling
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
TO-247
TO-220AB
.
th(c)
Per diode
To t al
Per diode
To t al
0.95
0.6
1.1
0.7
TO-247 0.25
TO-220AB 0.3
°C/W
2/9 Doc ID 15641 Rev 2
STPS61L60C Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 25 °C
T
(1)
I
Reverse leakage current
R
j
Tj = 125 °C - 150 350
V
= V
R
RRM
--0.8
Tj = 25 °C IF = 5 A - 0.360 -
T
= 125 °C IF = 5 A - 0.255 -
j
(2)
V
Forward voltage drop
F
Tj = 25 °C IF = 15 A - 0.460 0.540
Tj = 125 °C IF = 15 A - 0.415 0.480
T
= 25 °C IF = 30 A - 0.580 0.660
j
Tj = 125 °C IF = 30 A - 0.560 0.620
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: t
To evaluate the conduction losses use the following equation: P = 0.44 x I
Figure 2. Average forward power dissipation
P (W)
F(av)
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40
Figure 4. Normalized avalanche power
= 380 µs, δ < 2%
p
vs. average forward current
(per diode)
δ=0.2
δ=0.1
δ=0.05
I (A)
F(av)
δ=0.5
δ
=tp/T
derating vs. pulse duration
+ 0.006 x I
F(AV)
F2(RMS)
Figure 3. Average forward current vs.
ambient temperature
(δ = 0.5, per diode)
I (A)
F(av)
δ=1
T
tp
35
30
25
20
15
10
5
0
T
=tp/T
δ
0 25 50 75 100 125 150
R
th(j-a)=Rth(j-c)
TO-220AB
R
=15 °C/W
th(j-a)
tp
T
amb
(°C)
TO-247
Figure 5. Normalized avalanche power
derating vs. junction temperature
mA
V
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
P(T)
ARM
j
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Doc ID 15641 Rev 2 3/9
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