STPS61L60C
Power Schottky rectifier
Features
■ High current capability
■ Avalanche rated
■ Low forward voltage drop current
■ High frequency operation
Description
This dual center tap schottky rectifier is suited for
high frequency switch mode power supplies.
Packaged in TO-247 and TO-220AB, this device
provides desktop SMPS designers with a low
forward voltage drop device, and reduced leakage
current, with the objective of making the
application compliant with environmental care
standards, or suitable for 80+ requirements.
Table 1. Device summary
I
F(AV)
V
RRM
(max) 150 °C
T
j
(typ) 0.560 V
V
F
2 x 30 A
60 V
A1
K
A2
K
A2
K
A1
TO-247
STPS61L60CW
TO-220AB
STPS61L60CT
Figure 1. Electrical characteristics
2 x I
I
"Forward"
F(Io)
X
X
V
F
O
I
F
I
O
I
R
V
V
To
V
I
V
RRM
V
V
AR
R
"Reverse"
V
F(2xIo)
A1
(a)
A2
K
V
I
AR
a. V
ARM
and I
must respect the reverse safe
ARM
operating area defined in Figure 12 V
pulse measurements (t
are static characteristics
< 1 µs). VR, IR, V
p
and IAR are
AR
RRM
June 2010 Doc ID 15641 Rev 2 1/9
and VF,
www.st.com
9
Characteristics STPS61L60C
1 Characteristics
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
P
V
ARM
V
ASM
T
1. Refer to Figure 12
2. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistances
Repetitive peak reverse voltage 60 V
RRM
Forward rms voltage 50 A
= 125 °C
T
Average forward current δ = 0.5
Surge non repetitive forward current tp = 10 ms sinusoidal
FSM
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 11500 W
ARM
Maximum repetitive peak avalanche
(1)
voltage
Maximum single pulse peak
(1)
avalanche voltage
Storage temperature range -65 to + 175 °C
stg
T
Maximum operating junction temperature
j
<
Rth(j-a)
1
dPtot
dTj
c
= 120 °C
T
c
t
< 1 µs Tj < 150 °C, IAR < 43 A 80 V
p
< 1 µs Tj < 150 °C, IAR < 43 A 80 V
t
p
(2)
Per diode
Per device
T0-247
T0-220AB
30
60
530
400
150 °C
Symbol Parameter Value Unit
A
A
R
R
th(j-c)
th(c)
Junction to case
Coupling
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
TO-247
TO-220AB
.
th(c)
Per diode
To t al
Per diode
To t al
0.95
0.6
1.1
0.7
TO-247 0.25
TO-220AB 0.3
°C/W
2/9 Doc ID 15641 Rev 2
STPS61L60C Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 25 °C
T
(1)
I
Reverse leakage current
R
j
Tj = 125 °C - 150 350
V
= V
R
RRM
--0.8
Tj = 25 °C IF = 5 A - 0.360 -
T
= 125 °C IF = 5 A - 0.255 -
j
(2)
V
Forward voltage drop
F
Tj = 25 °C IF = 15 A - 0.460 0.540
Tj = 125 °C IF = 15 A - 0.415 0.480
T
= 25 °C IF = 30 A - 0.580 0.660
j
Tj = 125 °C IF = 30 A - 0.560 0.620
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: t
To evaluate the conduction losses use the following equation: P = 0.44 x I
Figure 2. Average forward power dissipation
P (W)
F(av)
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40
Figure 4. Normalized avalanche power
= 380 µs, δ < 2%
p
vs. average forward current
(per diode)
δ=0.2
δ=0.1
δ=0.05
I (A)
F(av)
δ=0.5
δ
=tp/T
derating vs. pulse duration
+ 0.006 x I
F(AV)
F2(RMS)
Figure 3. Average forward current vs.
ambient temperature
(δ = 0.5, per diode)
I (A)
F(av)
δ=1
T
tp
35
30
25
20
15
10
5
0
T
=tp/T
δ
0 25 50 75 100 125 150
R
th(j-a)=Rth(j-c)
TO-220AB
R
=15 °C/W
th(j-a)
tp
T
amb
(°C)
TO-247
Figure 5. Normalized avalanche power
derating vs. junction temperature
mA
V
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
P(T)
ARM
j
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Doc ID 15641 Rev 2 3/9
Characteristics STPS61L60C
Figure 6. Non repetitive surge peak forward
current vs. overload duration
(max. values, per diode, TO-247)
I (A)
M
350
300
250
200
150
100
I
M
50
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
Tc=25 °C
Tc=75 °C
Tc=125 °C
Figure 8. Relative variation of thermal
impedance junction to case
vs. pulse duration
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Single pulse
0.3
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
Figure 10. Junction capacitance vs. reverse
voltage applied
(typical values, per diode)
C(pF)
10000
V
osc
F=1 MHz
=30 mV
Tj=25 °C
RMS
Figure 7. Non repetitive surge peak forward
current vs. overload duration
(max. values, per diode, TO-220AB)
I (A)
M
350
300
250
200
150
100
I
M
50
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
Tc=25 °C
Tc=75 °C
Tc=125 °C
Figure 9. Reverse leakage current vs. reverse
voltage applied
(typical values, per diode)
I (mA)
R
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
0 5 10 15 20 25 30 35 40 45 50 55 60
Tj=150 °C
Tj=125 °C
Tj=100 °C
Tj=75 °C
Tj=50 °C
Tj=25 °C
V (V)
R
Figure 11. Forward voltage drop vs. forward
current (per diode)
I (A)
FM
100
TJ=125 °C
TJ=125 °C
Maximum values
Maximum values
1000
V (V)
100
1 10 100
R
4/9 Doc ID 15641 Rev 2
TJ=125 °C
TJ=125 °C
Typical values
Typical values
10
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
TJ=25 °C
Maximum values
V (V)
FM
STPS61L60C Characteristics
Figure 12. Reverse safe operating area (tp < 1 µs and Tj < 150 °C)
Iarm (A)
60
55
50
45
40
35
Operating area
30
25
20
60 65 70 75 80 85 90 95 100
Forbidden area
Varm(V)
Doc ID 15641 Rev 2 5/9
Package information STPS61L60C
2 Package information
● Epoxy meets UL94, V0
● Cooling method: conduction
● Torque value:
– TO-247 - 0.55 N·m recommended, 1.0 N·m maximum
– TO-220AB - 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
Table 5. TO-247 dimensions
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
.
Dimensions
Ref.
Millimeters Inches
Min. Max. Min. Max.
A 4.85 5.15 0.191 0.203
A1 2.20 2.60 0.086 0.102
b 1.00 1.40 0.039 0.055
Heat-sink plane
E
S
D
L1
L
11223
∅R
L2
b1
b2
b
e
A
b1 2.00 2.40 0.078 0.094
∅P
b2 3.00 3.40 0.118 0.133
c 0.40 0.80 0.015 0.031
(1)
D
19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e 5.45 typ. 0.215 typ.
3
c
A1
BACK VIEW
L 14.20 14.80 0.559 0.582
L1 3.70 4.30 0.145 0.169
L2 18.50 typ. 0.728 typ.
(2)
∅P
3.55 3.65 0.139 0.143
1. Dimension D plus gate protrusion does not exceed 20.5 mm
2. Resin thickness around the mounting hole is not less than 0.9 mm
6/9 Doc ID 15641 Rev 2
∅R 4.50 5.50 0.177 0.217
S 5.50 typ. 0.216 typ.
STPS61L60C Package information
Table 6. TO-220AB dimensions
Dimensions
L2
F2
F1
F
G1
H2
Dia
Ref.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A
C
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
L5
L6
L7
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
L9
L4
D
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
M
E
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
G
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Doc ID 15641 Rev 2 7/9
Ordering information STPS61L60C
3 Ordering information
Table 7. Ordering information
Order code Marking Package Weight Base qty Delivery mode
STPS61L60CW STPS61L60CW TO-247 4.4 g 30 Tube
STPS61L60CT STPS61L60CT TO-220AB 2.23 g 30 Tube
4 Revision history
Table 8. Document revision history
Date Revision Changes
18-May-2009 1 Initial release.
29-Jun-2010 2
Added Figure 1 and Figure 12. Added parameters V
V
to Ta b l e 2 . Updated Tabl e 5 .
ASM
ARM
and
8/9 Doc ID 15641 Rev 2
STPS61L60C
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Doc ID 15641 Rev 2 9/9
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