ST STPS61L45C User Manual

STPS61L45C

Power Schottky rectifier

Features

■ High current capability

■ Avalanche rated

■ Low forward voltage drop current

■ High frequency operation

Description

Dual center tap Schottky rectifier suited for high frequency switch mode power supplies.

Packaged in TO-247 and TO-220AB, this device provides desktop SMPS designers with a low forward voltage drop device, and reduced leakage current, with the objective of making the application compliant with environmental care standards, or suitable for 80+ requirements.

A1

A2

K

A2

K

A1

TO-220AB

STPS61L45CT

Table 1. Device summary

STPS61L45CW

Symbol Value

I

F(AV)

V

RRM

(max) 150 °C

T

j

(typ) 0.45 V

V

F

K

A2

K

A1

TO-247

2 x 30 A

45 V

July 2011 Doc ID 14192 Rev 2 1/8

www.st.com

8

Characteristics STPS61L45C

1 Characteristics

Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise

specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

T

1. condition to avoid runaway for a diode on its own heatsink

Table 3. Thermal resistances

Repetitive peak reverse voltage 45 V

Forward rms current 60 A

Average forward current δ = 0.5

= 120 °C

c

Tc = 115 °C

Per diode Per device

T

Surge non repetitive forward current tp = 10 ms sinusoidal 500 A

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 10000 W

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

<

Rth(j-a)

1

dPtot

dTj

(1)

30 60

150 °C

Symbol Parameter Value Unit

R

th(j-c)

th(c)

Junction to case

Per diode To t al

Coupling 0.2 °C/W

1.3

0.75

°C/W

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x R

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

.

A

T

= 25 °C

(1)

I

Reverse leakage current

R

j

= 125 °C 190 400

T

j

T

= 25 °C

j

Tj = 125 °C 0.23

T

= 25 °C

(2)

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

F

j

= 125 °C 0.34 0.40

T

j

= 25 °C

T

j

T

= 125 °C 0.45 0.51

j

To evaluate the conduction losses use the following equation: P = 0.3 x I

2/8 Doc ID 14192 Rev 2

+ 0.007 x I

F(AV)

F2(RMS)

= V

V

R

RRM

= 5 A

I

F

IF = 15 A

= 30 A

I

F

1.5 mA

0.35

0.43 0.50 V

0.50 0.56

STPS61L45C Characteristics

0

Figure 1. Conduction losses versus average

forward current (per diode)

P (W)

F(av)

25

20

15

10

5

0

0 5 10 15 20 25 30 35 40

δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1

I (A)

F(av)

δ

=tp/T

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1 µs)

ARM

1

0.1

0.01

t (µs)

.001

0.10.01 1

p

10 100 100

Figure 5. Non repetitive surge peak forward

current versus overload duration (per diode)

Figure 2. Average forward current versus

ambient temperature (δ = 0.5), (per diode)

I (A)

F(av)

35

R

30

25

20

15

10

5

0

T

tp

=tp/T

δ

0 25 50 75 100 125 150

th(j-a)=Rth(j-c)

T

amb

R

th(j-a)

(°C)

=10°C/W

Figure 4. Normalized avalanche power

derating versus junction temperature

P(Tj)

ARM

P (25 °C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 6. Relative variation of thermal

impedance junction to case versus pulse duration

I (A)

M

300

250

200

150

100

I

M

50

0

1.E-03 1.E-02 1.E-01 1.E+00

t

=0.5

δ

t(s)

TC=25°C

TC=75°C

TC=125°C

Doc ID 14192 Rev 2 3/8

Z/R

th(j-c) th(j-c)

1.0

TO-247

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

δ

=tp/T

T

tp