ST STPS61H100C User Manual

STPS61H100C

High voltage power Schottky rectifier

Features

■High junction temperature capability

■Low leakage current

■Good trade off between leakage current and forward voltage drop

■Low thermal resistance

■High frequency operation

Description

Dual center tap Schottky rectifier suited for high frequency switch mode power supply.

Packaged in TO-247, this device is intended for use to enhance the reliability of the application.

Datasheet − production data

A1

K

A2

			A2
			K1
			A1
		TO-247
j	Device summary
Table 1.
	IF(AV)		2 x 30 A
	VRRM		100 V
	Tj (max)		175 °C
	VF(max)		0.67 V

March 2012

Doc ID 10029 Rev 3

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This is information on a product in full production.

www.st.com

Characteristics	STPS61H100C

1 Characteristics

Table 2.			Absolute ratings (limiting values, per diode)
Symbol					Parameter					Value	Unit
VRRM		Repetitive peak reverse voltage								100	V
IF(RMS)		Forward rms current								80	A
IF(AV)		Average forward current				Tc = 150 °C		Per diode		30	A
						δ = 0.5		Per device		60
IFSM		Surge non repetitive forward current				tp = 10 ms sinusoidal				450	A
PARM		Repetitive peak avalanche power				tp = 1 µs	Tj = 25 °C			26400	W
Tstg		Storage temperature range								-65 to + 175	°C
T		Maximum operating junction temperature (1)								175	°C
j
dV/dt		Critical rate of rise of reverse voltage								10000	V/µs
1. dPtot	<		1		condition to avoid thermal runaway for a diode on its own heatsink
			Rth(j-a)
dTj
Table 3.			Thermal resistance
Symbol					Parameter					Value	Unit
Rth(j-c)		Junction to case					Per diode			0.9	°C/W
							Total			0.6
Rth(c)		Junction to case					Coupling			0.3	°C/W

When the diodes 1 and 2 are used simultaneously:

Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 4.	Static electrical characteristics (per diode)
Symbol	Parameter	Test conditions					Min.	Typ.	Max.	Unit
I (1)	Reverse leakage current	Tj = 25 °C	V		= V			3	16	µA
				R		RRM
R		Tj = 125 °C						4	16	mA
		Tj = 25 °C	IF = 30 A						0.79
VF(1)	Forward voltage drop	Tj = 125 °C	IF = 30 A					0.63	0.67	V
		Tj = 25 °C	IF = 60 A						0.93
		Tj = 125 °C	IF = 60 A					0.72	0.78
1. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.56 x IF(AV) + 0.0036 IF2(RMS)

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STPS61H100C	Characteristics
Figure 1. Conduction losses versus average Figure 2.	Normalized avalanche power
current (per diode)	derating versus pulse duration

PF(AV)(W)									PARM(tp)
30
				δ = 0.1	δ = 0.2	δ = 0.5			PARM(1 µs)
									1
25		δ = 0.05
20							δ = 1		0.1
15
10									0.01
							T
5
0				IF(AV)(A)		δ	=tp/T	tp	0.001			tp(µs)
									0.01	0.1	1	10	100	1000
0	5	10	15	20	25	30	35
									40

Figure 3. Normalized avalanche power	Figure 4. Average forward current versus
derating versus junction	ambient temperature (δ = 0.5, per
temperature	diode)

	PARM(Tj)					IF(AV)(A)
						35
PARM(25 °C)									Rth(j-a)=Rth(j-c)
1.2						30
1						25
0.8						20
0.6						15
0.4									Rth(j-a)=15°C/W
						10
								T
0.2
			Tj(°C)			5
									Tamb(°C)
0							δ=tp/T	tp
						0
25	50	75	100	125	150
						0	25	50	75	100	125	150	175

Figure 5. Non repetitive surge peak forward Figure 6.	Relative variation of thermal
current versus overload duration	impedance junction to case versus
(maximum values, per diode)	pulse duration

IM(A)						Zth(j-c)/Rth(j-c)
400					1.0
350					0.9
300					0.8
					0.7
250					0.6	δ = 0.5
				Tc=25°C
200					0.5
150				Tc=75°C	0.4	δ = 0.2
					0.3	δ = 0.1			T
100				Tc=125°C
					0.2
IM
						Single pulse
50
	t		t(s)		0.1		tp(s)	δ=tp/T	tp
	δ=0.5				0.0
0
1.E-03		1.E-02	1.E-01	1.E+00	1.E-03		1.E-02	1.E-01	1.E+00

Doc ID 10029 Rev 3

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