ST STPS61H100C User Manual

Features

■ High junction temperature capability

■ Low leakage current

■ Good trade off between leakage current and

forward voltage drop

■ Low thermal resistance

■ High frequency operation

Description

STPS61H100C

High voltage power Schottky rectifier

Datasheet − production data

A1

A2

K

Dual center tap Schottky rectifier suited for high
frequency switch mode power supply.

Packaged in TO-247, this device is intended for
use to enhance the reliability of the application.

A1

TO-247

j

Table 1. Device summary

I

F(AV)

V

RRM

(max) 175 °C

T

j

V

(max) 0.67 V

F

A2

K1

2 x 30 A

100 V

March 2012 Doc ID 10029 Rev 3 1/7

This is information on a product in full production.

www.st.com

7

Characteristics STPS61H100C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

FSM

P

T

Repetitive peak reverse voltage 100 V

RRM

Forward rms current 80 A

Average forward current

Tc = 150 °C
δ = 0.5

Per diode
Per device

Surge non repetitive forward current tp = 10 ms sinusoidal 450 A

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 26400 W

ARM

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

(1)

30
60

175 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

<

Rth(j-a)

1

dPtot

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance

Symbol Parameter Value Unit

R

R

Junction to case

th(j-c)

Junction to case Coupling 0.3 °C/W

th(c)

Per diode
To t al

0.9

0.6

°C/W

When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x R

Table 4. Static electrical characteristics (per diode)

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

A

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 25 °C

T

(1)

I

V

1. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

R

(1)

Forward voltage drop

F

j

= 125 °C 4 16 mA

T

j

= 25 °C IF = 30 A 0.79

T

j

T

= 125 °C IF = 30 A 0.63 0.67

j

= 25 °C IF = 60 A 0.93

T

j

T

= 125 °C IF = 60 A 0.72 0.78

j

To evaluate the conduction losses use the following equation:
P = 0.56 x I

2/7 Doc ID 10029 Rev 3

F(AV)

+ 0.0036 I

F2(RMS)

V

= V

R

RRM

V

316µA

STPS61H100C Characteristics

Figure 1. Conduction losses versus average

current (per diode)

P (W)

F(AV)

30

25

20

15

10

5

0

0 5 10 15 20 25 30 35 40

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus junction
temperature

P(Tj)

ARM

P (25 °C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration
(maximum values, per diode)

I (A)

M

400

350

300

250

200

150

100

IM

50

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

T =25°C

c

T =75°C

c

T =125°C

c

Figure 2. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1 µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 4. Average forward current versus

ambient temperature (δ = 0.5, per
diode)

I (A)

F(AV)

35

30

25

20

15

10

5

0

0 25 50 75 100 125 150 175

δ

=tp/T

T

tp

R=R

th(j-a) th(j-c)

R =15°C/W

th(j-a)

T (°C)

amb

Figure 6. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4

δ = 0.2

δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

δ

=tp/T

T

tp

Doc ID 10029 Rev 3 3/7