ST STPS61170C User Manual

STPS61170C

High voltage power Schottky rectifier

Features

■High junction temperature capability

■Low leakage current

■Good trade off between leakage current and forward voltage drop

■Low thermal resistance

■High frequency operation

■Avalanche specification

Description

Dual center tab Schottky rectifier suited for high frequency switched mode power supply.

Packaged in TO-247, this device is intended for use to enhance the reliability of the application.

A1

K

A2

A2

K

A1

TO-247

Table 1.	Device summary
	Symbol		Value
	IF(AV)		2 x 30 A
	VRRM		170 V
	Tj		175 °C
	VF (max)		0.67 V

December 2010

Doc ID 11643 Rev 2

1/7

www.st.com

Characteristics

STPS61170C

1

Characteristics

Table 2.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

V

IF(RMS)

Forward rms current

80

A

IF(AV)

Average forward current

TC = 150 °C δ = 0.5

Per diode

30

A

Per device

60

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

500

A

PARM

Repetitive peak avalanche power

tp = 1 µs Tj = 25 °C

31800

W

V

(1)

Maximum repetitive peak avalanche voltage

tp = 1 µs, Tj < 150 °C,

200

V

ARM

(1)

Maximum single pulse peak avalanche voltage

IAR < 47 A

VASM

Tstg

Storage temperature range

-65 to + 175

°C

T

Maximum operating junction temperature(2)

175

°C

j

dV/dt

Critical rate of rise reverse voltage

10000

V/µs

1. Refer to Figure 11

2.

dPtot <

1

condition to avoid thermal runaway for a diode on its own heatsink

Rth(j-a)

dTj

Table 3.

Thermal resistance parameters

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

Per diode

0.9

Total

0.6

°C/W

Rth (c)

Coupling

0.3

When the diodes 1 and 2 are used simultaneously :

Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

I

(1)

Reverse leakage current

Tj = 25 °C

V

= V

60

µA

R

RRM

R

Tj = 125 °C

16

60

mA

Tj = 25 °C

IF = 30 A

0.84

VF (2)

Forward voltage drop

Tj = 125 °C

0.63

0.67

V

Tj = 25 °C

IF = 60 A

0.92

Tj = 125 °C

0.76

0.80

1.Pulse test: tp = 5 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation :

P = 0.54 x IF(AV) + 0.0043 IF2(RMS)

2/7	Doc ID 11643 Rev 2

STPS61170C	Characteristics
Figure 1. Average forward power dissipation Figure 2.	Average forward current versus
versus average forward current	ambient temperature
(per diode)	(δ = 0.5, per diode)

P	(W)
F(AV)

30

=0.05

=0.1

=0.2

=0.5

=1

25

20

15

10
							T
5
				IF(AV)(A)			=tp/T	tp
0
0	5	10	15	20	25	30	35	40

I	(A)
F(AV)

35

Rth(j-a)=Rth(j-c)

30

25

20

15		Rth(j-a)=15°C/W
10	T
5
=tp/T	tp	Tamb(°C)
0

0

25

50

75

100

125

150

175

Figure 3. Normalized avalanche power	Figure 4. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

	PARM(tp)							PARM(Tj)
	PARM(tp)							PARM(tp)
								PARM(25 °C)
1	PARM(1µs)						1.2
	PARM(1µs)							PARM(25°C)
	1							1.2
							1	1
0.1	0.1						0.8	0.8
							0.6	0.6
0.01	0.01						0.4	0.4
							0.2	0.2			Tj(°C)
0.001				tp(µs)				0
													T(°C)j
0.001	0.01	0.1	1	10	100	t (µs)	0		50	75	100	125
						1000p		25					150
0.01		0.1	1	10	100	1000	25		50	75	100	125	150

Figure 5.

I	(A)
M

400

350

300

250

200

150

100

IM

50

0

1.E-03

Non repetitive surge peak forward Figure 6. Relative variation of thermal

current versus overload duration	impedance junction to case versus
(maximum values, per diode)	pulse duration (per diode)
Z	/R
th(j-c)	th(j-c)

1.0

0.9

0.8

0.7

=0.5

TC=50°C 0.6

0.5

TC=75°C
0.4	=0.2

		TC=125°C	0.3	=0.1				T
			0.2
t			0.1	Single pulse
=0.5							=tp/T	tp
						tP(s)
1.E-02	1.E-01	1.E+00	0.0
			1.E-03		1.E-02		1.E-01	1.E+00
	t(s)

Doc ID 11643 Rev 2

3/7