ST STPS61150CW User Manual
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 175°C
(max) 0.67 V
V
F
2x30A
150 V
STPS61150CW
A1
K
A2
FEATURES AND BENEFITS
HIGHJUNCTIONTEMPERATURECAPABILITY
■
LOW LEAKAGE CURRENT
■
GOOD TRADE OFF BETWEEN LEAKAGE
■
TO-247
A1
A2
K
CURRENT AND FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
■
■ HIGH FREQUENCY OPERATION
DESCRIPTION
Dual center tap Schottky rectifiers suited for high
frequency switch mode power supply.
Packaged in TO-247, this devices is intended for
use to enhance the reliability of the application.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
stg
Tj
dV/dt
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 150°C
δ = 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
150 V
80 A
30
60
500 A
31800 W
- 65 to + 175 °C
175 °C
10000 V/µs
A
dPtot
*:
<
dTj Rth j a
October 2003 - Ed: 1A
thermal runaway condition for a diode on its own heatsink
−1()
1/5
STPS61150CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
Total
R
th(j-c)
Junction to case
Coupling 0.3 °C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
V
F
Pulse test : *tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.54xI
Reverse leakage
current
*
Forward voltage drop Tj = 25°CI
Tj = 25°C VR=V
Tj = 125°C
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
+ 0.0043 I
F(AV)
F2(RMS)
=30A
F
=30A
F
=60A
F
=60A
F
RRM
0.9
°C/W
0.6
720µA
725mA
0.84 V
0.63 0.67
0.92
0.76 0.8
Fig. 1: Conduction losses versus average current
(per diode).
P (W)
F(AV)
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Fig. 2: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 4: Average forward current versus ambient
temperature (δ=0.5, per diode).
I (A)
F(AV)
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
R=R
th(j-a) th(j-c)
R =15°C/W
th(j-a)
T (°C)
amb
2/4
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