ST STPS60SM200C User Manual
STPS60SM200C
Power Schottky rectifier
Features
■ High reverse voltage (200 V)
■ Low forward voltage drop
■ High frequency operation
Description
The STPS60SM200C is a dual Schottky rectifier
suited for high frequency switched-mode power
supply.
Housed in TO-247, this device is especially suited
for use in telecom base station SMPS, providing
these applications with a good efficiency at both
low and high load.
A1
A2
A1
TO-247
STPS60SM200CW
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
(max) 175 °C
T
j
(typ) 640 mV
V
F
K
A2
K
2 x 30 A
200 V
May 2011 Doc ID 018819 Rev 1 1/7
www.st.com
7
Characteristics STPS60SM200C
1 Characteristics
Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
FSM
T
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Repetitive peak reverse voltage 200 V
RRM
Forward current rms 50 A
Average forward current δ = 0.5
Per diode, δ = 0.5 T
per device, δ = 0.5 T
= 155 °C 30
c
= 150 °C 60
c
Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C 500 A
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature
T
j
dPtot
dTj
<
Rth(j-a)
1
(1)
-40 to + 175 °C
Symbol Parameter Value Unit
R
R
Junction to case
th(j-c)
Coupling 0.3
th(c)
Per diode 0.7
°C/WTotal 0.5
When the two diodes 1 and 2 are used simultaneously:
ΔT
(diode 1) = P(diode 1) x R
j
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
A
(1)
I
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: t
Reverse leakage current
R
(2)
Forward voltage drop
F
= 380 µs, δ < 2%
p
To evaluate the conduction losses use the following equation:
P = 0.58 x I
+ 0.0037 x I
F(AV)
= 25 °C
T
j
T
= 125 °C 6 13
j
T
= 25 °C
j
= 125 °C 0.51 0.55
T
j
= 25 °C
T
j
= 125 °C 0.57 0.61
T
j
= 25 °C
T
j
= 125 °C 0.64 0.69
T
j
F2(RMS)
V
= V
R
I
= 7.5 A
F
I
= 15 A
F
I
= 30 A
F
RRM
0.67 0.70
0.73 0.77
0.79 0.83
0.05
mA
V
2/7 Doc ID 018819 Rev 1
STPS60SM200C Characteristics
Figure 1. Average forward power dissipation
versus average forward current
(per diode)
P (W)
F(AV)
35
30
25
20
15
10
5
0
T
δ = 0.5
δ = t / T
0 5 10 15 20 25 30 35 40
t
p
p
δ = 0.2
δ = 0.1
δ = 0.05
δ = 1
I (A)
F(AV)
Figure 3. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
I (A)
M
500
450
400
350
300
250
200
150
100
I
M
50
0
1.E-03 1.E-02 1.E-01 1.E+00
δ = 0.5
t
T = 25 °C
c
T = 75 °C
c
T = 125 °C
c
t(s)
Figure 5. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
I (mA)
R
1.E+02
T = 150 °C
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
0 20 40 60 80 100 120 140 160 180 200
j
T = 125 °C
j
T = 100 °C
j
T = 75 °C
j
T = 50 °C
j
T = 25 °C
j
V (V)
R
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
I (A)
F(AV)
35
R
= R
th(j-a)
30
25
20
15
10
5
T (°C)
0
0 25 50 75 100 125 150 175
amb
th(j-c)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
Figure 6. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(nF)
10.0
1.0
0.1
1 10 100 1000
F = 1 MHz
V = 30 mV
osc RMS
T = 25 °C
j
V (V)
R
Doc ID 018819 Rev 1 3/7
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