ST STPS60SM200C User Manual

STPS60SM200C

Power Schottky rectifier

Features

■ High reverse voltage (200 V)

■ Low forward voltage drop

■ High frequency operation

Description

The STPS60SM200C is a dual Schottky rectifier
suited for high frequency switched-mode power
supply.

Housed in TO-247, this device is especially suited
for use in telecom base station SMPS, providing
these applications with a good efficiency at both
low and high load.

A1

A2

A1

TO-247

STPS60SM200CW

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(max) 175 °C

T

j

(typ) 640 mV

V

F

K

A2

K

2 x 30 A

200 V

May 2011 Doc ID 018819 Rev 1 1/7

www.st.com

7

Characteristics STPS60SM200C

1 Characteristics

Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

FSM

T

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Repetitive peak reverse voltage 200 V

RRM

Forward current rms 50 A

Average forward current δ = 0.5

Per diode, δ = 0.5 T

per device, δ = 0.5 T

= 155 °C 30

c

= 150 °C 60

c

Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C 500 A

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

dPtot

dTj

<

Rth(j-a)

1

(1)

-40 to + 175 °C

Symbol Parameter Value Unit

R

R

Junction to case

th(j-c)

Coupling 0.3

th(c)

Per diode 0.7

°C/WTotal 0.5

When the two diodes 1 and 2 are used simultaneously:
ΔT

(diode 1) = P(diode 1) x R

j

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

A

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: t

Reverse leakage current

R

(2)

Forward voltage drop

F

= 380 µs, δ < 2%

p

To evaluate the conduction losses use the following equation:

P = 0.58 x I

+ 0.0037 x I

F(AV)

= 25 °C

T

j

T

= 125 °C 6 13

j

T

= 25 °C

j

= 125 °C 0.51 0.55

T

j

= 25 °C

T

j

= 125 °C 0.57 0.61

T

j

= 25 °C

T

j

= 125 °C 0.64 0.69

T

j

F2(RMS)

V

= V

R

I

= 7.5 A

F

I

= 15 A

F

I

= 30 A

F

RRM

0.67 0.70

0.73 0.77

0.79 0.83

0.05
mA

V

2/7 Doc ID 018819 Rev 1

STPS60SM200C Characteristics

Figure 1. Average forward power dissipation

versus average forward current
(per diode)

P (W)

F(AV)

35

30

25

20

15

10

5

0

T

δ = 0.5

δ = t / T

0 5 10 15 20 25 30 35 40

t

p

p

δ = 0.2

δ = 0.1

δ = 0.05

δ = 1

I (A)

F(AV)

Figure 3. Non repetitive surge peak forward

current versus overload duration
(maximum values, per diode)

I (A)

M

500

450

400

350

300

250

200

150

100

I

M

50

0

1.E-03 1.E-02 1.E-01 1.E+00

δ = 0.5

t

T = 25 °C

c

T = 75 °C

c

T = 125 °C

c

t(s)

Figure 5. Reverse leakage current versus

reverse voltage applied
(typical values, per diode)

I (mA)

R

1.E+02

T = 150 °C

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

1.E-04
0 20 40 60 80 100 120 140 160 180 200

j

T = 125 °C

j

T = 100 °C

j

T = 75 °C

j

T = 50 °C

j

T = 25 °C

j

V (V)

R

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I (A)

F(AV)

35

R

= R

th(j-a)

30

25

20

15

10

5

T (°C)

0

0 25 50 75 100 125 150 175

amb

th(j-c)

Figure 4. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Figure 6. Junction capacitance versus

reverse voltage applied
(typical values, per diode)

C(nF)

10.0

1.0

0.1
1 10 100 1000

F = 1 MHz

V = 30 mV

osc RMS

T = 25 °C

j

V (V)

R

Doc ID 018819 Rev 1 3/7

Characteristics STPS60SM200C

Figure 7. Forward voltage drop versus

forward current
(per diode, low level)

I (A)

FM

60

55

50

45

40

35

30

25

20

15

10

5

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

(Maximum values)

(Maximum values)

(Typical values)

T = 25 °C

j

T = 125 °C

j

T = 125 °C

j

V (V)

FM

Figure 8. Forward voltage drop versus

forward current
(per diode, high level)

I (A)

FM

100.0

T = 125 °C

j

(Maximum values)

10.0

T = 125 °C

j

(Typical values)

1.0

0.1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

T = 25 °C

j

(Maximum values)

V (V)

FM

4/7 Doc ID 018819 Rev 1

STPS60SM200C Package information

2 Package information

● Epoxy meets UL94, V0

● Cooling method: by conduction (C)

● Recommended torque value: 0.55 to 1.0 N·m

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 5. TO-247 dimensions

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

.

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 4.85 5.16 0.191 0.203

D 2.20 2.60 0.086 0.102

V

V

Dia

E 0.40 0.80 0.015 0.031

F 1.00 1.40 0.039 0.055

F1 3.00 typ. 0.118 typ.

H

A

F2 2.00 typ. 0.079 typ.

F3 1.90 2.40 0.075 0.094

L5

F4 3.00 3.40 0.118 0.134

G 10.90 typ. 0.429 typ.

L3

L

L2

L4

F2

F4

F3

L1

D

EM

F1

V2

F(x3)

G

H 15.45 16.03 0.608 0.631

L 19.85 21.09 0.781 0.830

L1 3.70 4.30 0.146 0.169

L2 18.30 19.13 0.720 0.753

L3 14.20 20.30 0.559 0.799

L4 34.05 41.38 1.341 1.629

L5 5.35 6.30 0.211 0.248

M 2.00 3.00 0.079 0.118

V 5° typ. 5° typ.

V2 60° typ. 60° typ.

Dia. 3.55 3.65 0.140 0.144

Doc ID 018819 Rev 1 5/7

Ordering information STPS60SM200C

3 Ordering information

Table 6. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STPS60SM200CW STPS60SM200CW TO-247 4.45 g 30 Tube

4 Revision history

Table 7. Document revision history

Date Revision Changes

17-May-2011 1 First issue.

6/7 Doc ID 018819 Rev 1

STPS60SM200C

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Doc ID 018819 Rev 1 7/7