ST STPS60L45CW User Manual

®
STPS60L45CW
LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
2x30A
Tj (max) 150°C
V
RRM
(max) 0.50V
V
F
45 V
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap schottky barrier rectifier suited for 5V output in off line AC/DC power supplies.
Packaged in TO-247, this device is intended for use in low voltage, high frequency converters, free wheeling and polarity protection applications.
A1
K
A2
A2
K
A1
TO-247
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Tj
dV/dt
dPtot
*:
Repetitive peak reverse voltage RMS forward current Average forward current Tc = 135°C
Surge non repetitive forward current tp = 10 ms Sinusoidal Repetitive peak reverse current tp=2µs square F=1kHz Non repetitive peak reverse current tp = 100 µs square Repetitive peak avalanche power tp = 1µs Tj = 25°C Storage temperature range Maximum operating junction temperature (*) Critical rate of rise of reverse voltage
<
dTj Rth j a
July 2003 - Ed: 3C
Per diode
δ = 0.5
Per device
thermal runaway condition for a diode on its own heatsink
−1()
45 V 50 A 30
60
600 A
2A 4A
12300 W
- 65 to + 150 °C 150 °C
10000 V/µs
A
1/4
STPS60L45CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junction to case Per diode
Total Coupling
0.75
0.42
0.1 °C/W
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
Reverse leakage cur­rent
V
*
F
Pulse test : * tp = 380 µs, δ <2%
Forward voltage drop Tj= 25°CI
Tj = 25°C V
=45V
R
Tj = 125°C
=30A
F
Tj = 125°C I Tj=25°CI Tj = 125°C I
=30A
F
=60A
F
=60A
F
175 350
0.44 0.5
0.64 0.72
1.5 mA
0.55 V
0.73
To evaluate the conduction losses use the following equation : P=0.28xI
Fig. 1: Average forward power dissipation versus average forward current (per diode).
F(AV)
+ 0.0073 I
F2(RMS)
Fig. 2: Average current versus ambient temperature (δ=0.5, per diode).
°C/W
PF(av)(W)
22 20 18 16 14 12 10
8 6 4 2 0
0 5 10 15 20 25 30 35 40
δ = 0.05
δ = 0.1
δ = 0.2
IF(av) (A)
δ = 0.5
=tp/T
δ
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
IF(av)(A)
35 30 25 20 15
δ
=tp/T
T
tp
10
5 0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2 1
0.8
0.6
0.4
0.2 0
0 25 50 75 100 125 150
T (°C)
j
2/4
STPS60L45CW
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per diode).
IM(A)
400 350 300 250 200 150 100
IM
50
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode).
IR(mA)
1E+3
Tj=150°C
1E+2
1E+1
1E+0
Tj=125°C
Tj=100°C
Fig. 6: Relative variation of thermal transient impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2 δ = 0.1
T
0.2
Single pulse
0.0 1E-4 1E-3 1E-2 1E-1 1E+0
tp(s)
δ
=tp/T
tp
Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(nF)
10.0
1.0
F=1MHz Tj=25°C
1E-1
Tj=25°C
VR(V)
1E-2
0 5 10 15 20 25 30 35 40 45
Fig. 9: Forward voltage drop versus forward current (per diode).
IFM(A)
200 100
Maximum values
Tj=125°C
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Typical values
Tj=150°C
Maximum values
Tj=100°C
Maximum values
Tj=25°C
VFM(V)
0.1 12 51020 50
VR(V)
3/4
STPS60L45CW
PACKAGE MECHANICAL DATA
TO-247
DIMENSIONS
V
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
V
Dia.
A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031
H
A
F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078
L5
L
F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133
G 10.90 0.429
H 15.45 15.75 0.608 0.620
F1
V2
F(x3)
G
= =
F4
F3
F2
L3
L4L2
L1
D
ME
L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5° 5° V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
Type Marking Package Weight Base qty Delivery mode
STPS60L45CW STPS60L45CW TO-247 4.36 g 30 Tube
Cooling method : C
RECOMMENDED TORQUE VALUE : 0.8M.N
MAXIMUM TORQUE VALUE : 1.0M.N
EPOXY MEETS UL94,V0
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