ST STPS60L40CW User Manual
®
STPS60L40CW
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x30A
40 V
Tj (max) 150°C
(max) 0.50 V
V
F
FEATURES AND BENEFITS
LOW FORWARD VOLTAGE DROP FOR LESS
n
POWER DISSIPATION
NEGLIGIBLE SWITCHING LOSSES ALLOWING
n
HIGH FREQUENCY OPERATION
AVALANCHE CAPABILITY SPECIFIED
n
DESCRIPTION
Dual center tap Schottky barrier rectifier designed
for highfrequencySwitchedModePowerSupplies
and DC to DC converters.
Packaged in TO-247 this device is intended for
use in low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
A2
K
A1
TO-247
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Tj
dV/dt
dPtot
*:
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 135°C
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current tp=2µs square F=1kHz
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
dTj Rth j a
July 2003 - Ed: 5A
Per diode
δ = 0.5
Per device
thermal runaway condition for a diodeon its own heatsink
−1()
40 V
50 A
30 A
60
600 A
2A
4A
12300 W
- 65 to + 150 °C
150 °C
10000 V/µs
1/4
STPS60L40CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th(c)
Junction to case Per diode
Total
Coupling
0.75
0.42
0.1 °C/W
When the diodes 1 and 2 areused simultaneously:
∆ Tj(diode 1) = P(diode1) xR
(Per diode) + P(diode 2)x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
Reverse leakage current
V
*
F
Pulse test:*tp=380µs,δ<2%
Forward voltage drop Tj = 25°C I
Tj = 25°C V
Tj = 100°C
Tj = 125°C I
Tj = 25°C I
Tj = 125°C I
R=VRRM
=30A
F
=30A
F
=60A
F
=60A
F
30 110 mA
0.44 0.5
0.64 0.72
1.5 mA
0.55 V
0.73
To evaluate the maximum conduction losses use the following equation :
P=0.28xI
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
F(AV)
+ 0.0073 I
F2(RMS)
Fig. 2: Average current versus ambient
temperature (δ = 0.5) (per diode).
°C/W
PF(av)(W)
22
20
18
16
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40
δ = 0.05
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
IF(av)(A)
35
30
25
20
15
δ
=tp/T
T
tp
10
5
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
2/4
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