ST STPS60L30C-Y User Manual

STPS60L30C-Y

Automotive power Schottky rectifier

Features

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ AEC-Q101 qualified

Description

60 A dual center tab Schottky rectifier suitable for automotive applications.

Packaged in PowerSO-20 (slug up), this device is especially intended for use in a low voltage applications.

A1

A2

Pin 10

K

Pin 1

Pin 20

PowerSO-20 (slug up)

STPS60L30CKY-TR

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j(max)

V

F(max)

K

Pin 11

K

A1

A2

K

2 x 30 A

30 V

150 °C

0.415 V

December 2010 Doc ID 18296 Rev 1 1/7

www.st.com

7

Characteristics STPS60L30C-Y

1 Characteristics

Table 2. Absolute rating (limiting value, per diode)

Symbol Parameter Value Unit

V

RRM

IF

(RMS)

IF

(AV)

I

FSM

T

1. All anode pins (A1, A2) must be connected

Repetitive peak reverse voltage 30 V

(1)

Forward rms current 45 A

T

= 130 °C, δ = 0.5

(1)

Average forward current

(1)

Surge non repetitive forward current tp = 10 ms Sinusoidal 250 A

Storage temperature range -65 to +175 °C

stg

T

Operating junction temperature range -40 to +150 °C

j

Recommended reflow soldering temperature range 245 +0/-5 °C

R

c

Square pulse

Per diode Per device

30 60

Table 3. Thermal parameters

Symbol Parameter Value Unit

R

th(j-c)

th(c)

Junction to case

Per diode Per device

Coupling 0.27 °C/W

0.95

0.61

°C/W

When diodes 1 and 2 are used simultaneously: ΔT

j(diode 1)

Table 4. Static electrical characteristics (per diode)

= P

(diode1)

x R

th(j-c)(Per diode)

+ P

(diode 2)

x R

th(c)

A

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 25 °C

T

R

(1)

V

F

1. Pulse test : tp = 380 µs, δ < 2%

2. All anode pins (A1, A2) must be connected

current

(2)

Forward voltage drop

Reverse leakage

(1)

I

j

= 125 °C 400 mA

T

j

= 25 °C IF = 10 A 0.420

T

j

T

= 125 °C IF = 10 A 0.310

j

= 25 °C IF = 30 A 0.490

T

j

= 125 °C IF = 30 A 0.415

T

j

V

R

To evaluate the maximum conduction losses use the following equation: P = 0.315 x I

2/7 Doc ID 18296 Rev 1

+ 0.00333 x I

F(AV)

F2(RMS)

= V

2mA

RRM

V

STPS60L30C-Y Characteristics

R=R

th(j-a) th(j-c)

R=10°C/W

th(j-a)

Figure 1. Average forward power dissipation

versus average forward current

P (W)

F(AV)

24

(per diode, all anode pins connected)

22

20

18

16

14

12

10

8

6

4

2

0

δ = 0.05

0 5 10 15 20 25 30 35 40 45

δ = 0.2

δ = 0.1

δ = 0.5

δ = 1

I (A)

F(AV)

Figure 3. Non repetetive surge peak forward

current versus overload duration (maximum values)

I (A)

M

400

350

300

250

200

150

100

I

M

50

0

1.E-03 1.E-02 1.E-01 1.E+00

(per diode, all anode pins connected)

t

δ = 0.5

T = 25 °C

c

T = 75 °C

c

T = 125 °C

c

t(s)

Figure 5. Reverse leakage current versus

reverse voltage applied (per diode) (typical values)

I (mA)

R

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

T = 150 °C

j

T = 125 °C

j

T = 100 °C

j

T = 75 °C

j

T = 50 °C

j

T = 25 °C

j

Figure 2. Average forward current versus

ambient temperature per diode (δ = 0.5)

I (A)

F(AV)

35

(per diode, all anode pins connected)

30

25

20

15

10

5

0

T

δ = t / T

0 25 50 75 100 125 150

t

p

T (°C)

amb

R=R

th(j-a) th(j-c)

R=10°C/W

th(j-a)

Figure 4. Relative variation of thermal

impedance, junction to case, versus pulse duration

Z/R

th(j-c) th(j-c)

1.0 (per diode, all anode pins connected)

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Single pulse

t (s)

p

Figure 6. Junction capacitance versus

reverse voltage applied (per diode) (typical values)

C(nF)

10.0

1.0

F = 1 MHz

V = 30 mV

osc RMS

T = 25 °C

j

1.E-02 0 5 10 15 20 25 30

V (V)

R

0.1 1 10 100

V (V)

R

Doc ID 18296 Rev 1 3/7