ST STPS60H100C User Manual

Main product characteristics

STPS60H100C

Power Schottky rectifier

I

2 x 30 A

F(AV)

V

RRM

T

j

V

0.72 V

F(max)

100 V

175° C

Feature and benefits

■ High junction temperature capability

■ Low leakage current

■ Low thermal resistance

■ High frequency operation

■ Avalanche specification

Description

Dual center tab Schottky rectifier suited for High Frequency server and telecom base station SMPS. Packaged in TO-220AB, this device combines high current rating and low volume to enhance both reliability and power density of the application.

Table 1. Absolute ratings (limiting values)

A1

A2

K

A1

TO-220AB

STPS60H100CT

Order code

Part Number Marking

STPS60H100CT STPS60H100CT

A2

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

T

stg

T

Repetitive peak reverse voltage 100 V

RMS forward current 60 A

Average forward current

Tc = 150° C δ = 0.5

Per diode Per device

Surge non repetitive forward current tp = 10 ms Sinusoidal 300 A

Repetitive peak avalanche power tp = 1 µs Tj = 25° C 18100 W

Storage temperature range -65 to + 175 ° C

Maximum operating junction temperature

j

(1)

175 ° C

30 60

A

dV/dt Critical rate of rise of reverse voltage 10000 V/μs

dPtot

---------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

1

--------------------------

<

Rth j a–()

February 2007 Rev 2 1/7

www.st.com

7

Characteristics STPS60H100C

1 Characteristics

Table 2. Thermal resistances

Symbol Parameter Value Unit

R

th(j-c)

th(c)

Junction to case

Per diode To ta l

Coupling 0.4

1.0

0.7

° C/W

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode 1) x R

Table 3. Static electrical characteristics (per diode)

Symbol Test conditions Min. Typ. Max. Unit

(1)

I

V

1. Pulse test : tp = 5 ms, δ < 2%

2. Pulse test : tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation : P = 0.6 x I

Reverse leakage current

R

(2)

Forward voltage drop

F

+ 0.004 IF

F(AV)

2

(per diode) + P(diode 2) x R

th(j-c)

T

= 25° C

j

T

= 125° C 3 10 mA

j

= 25° C IF = 30 A 0.84

T

j

T

= 125° C IF = 30 A 0.67 0.72

j

= 25° C IF = 60 A 0.92 0.98

T

j

= 125° C IF = 60 A 0.8 0.84

T

j

(RMS)

th(c)

210µA

= V

V

R

RRM

V

2/7

STPS60H100C Characteristics

Figure 1. Average forward power dissipation

versus average forward current (per diode)

P (W)

F(AV)

26

24

22

20

18

16

14

12

10

8

6

4

2

0

0 5 10 15 20 25 30 35

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (

δ = 0.5, per

diode)

I (A)

F(AV)

35

R=R

30

25

20

15

10

5

0

0 25 50 75 100 125 150 175

δ

=tp/T

T

tp

th(j-a) th(j-c)

R =15°C/W

th(j-a)

T (°C)

amb

Figure 4. Normalized avalanche power

derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

0 25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration

I (A)

M

400

350

300

250

T =50°C

200

150

100

IM

50

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

C

T =75°C

C

T =125°C

C

Figure 6. Relative variation of thermal

impedance junction to case versus pulse

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

3/7

t (s)

p