ST STPS60H100C User Manual
Main product characteristics
STPS60H100C
Power Schottky rectifier
I
2 x 30 A
F(AV)
V
RRM
T
j
V
0.72 V
F(max)
100 V
175° C
Feature and benefits
■ High junction temperature capability
■ Low leakage current
■ Low thermal resistance
■ High frequency operation
■ Avalanche specification
Description
Dual center tab Schottky rectifier suited for High
Frequency server and telecom base station
SMPS. Packaged in TO-220AB, this device
combines high current rating and low volume to
enhance both reliability and power density of the
application.
Table 1. Absolute ratings (limiting values)
A1
A2
K
K
K
A1
TO-220AB
STPS60H100CT
Order code
Part Number Marking
STPS60H100CT STPS60H100CT
A2
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
stg
T
Repetitive peak reverse voltage 100 V
RMS forward current 60 A
Average forward current
Tc = 150° C
δ = 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10 ms Sinusoidal 300 A
Repetitive peak avalanche power tp = 1 µs Tj = 25° C 18100 W
Storage temperature range -65 to + 175 ° C
Maximum operating junction temperature
j
(1)
175 ° C
30
60
A
dV/dt Critical rate of rise of reverse voltage 10000 V/μs
dPtot
---------------
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
1
--------------------------
<
Rth j a–()
February 2007 Rev 2 1/7
www.st.com
7
Characteristics STPS60H100C
1 Characteristics
Table 2. Thermal resistances
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junction to case
Per diode
To ta l
Coupling 0.4
1.0
0.7
° C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode 1) x R
Table 3. Static electrical characteristics (per diode)
Symbol Test conditions Min. Typ. Max. Unit
(1)
I
V
1. Pulse test : tp = 5 ms, δ < 2%
2. Pulse test : tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.6 x I
Reverse leakage current
R
(2)
Forward voltage drop
F
+ 0.004 IF
F(AV)
2
(per diode) + P(diode 2) x R
th(j-c)
T
= 25° C
j
T
= 125° C 3 10 mA
j
= 25° C IF = 30 A 0.84
T
j
T
= 125° C IF = 30 A 0.67 0.72
j
= 25° C IF = 60 A 0.92 0.98
T
j
= 125° C IF = 60 A 0.8 0.84
T
j
(RMS)
th(c)
210µA
= V
V
R
RRM
V
2/7
STPS60H100C Characteristics
Figure 1. Average forward power dissipation
versus average forward current (per
diode)
P (W)
F(AV)
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30 35
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2. Average forward current versus
ambient temperature (
δ = 0.5, per
diode)
I (A)
F(AV)
35
R=R
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
th(j-a) th(j-c)
R =15°C/W
th(j-a)
T (°C)
amb
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
Figure 5. Non repetitive surge peak forward
current versus overload duration
I (A)
M
400
350
300
250
T =50°C
200
150
100
IM
50
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
C
T =75°C
C
T =125°C
C
Figure 6. Relative variation of thermal
impedance junction to case versus
pulse
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
3/7
t (s)
p
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