ST STPS6045HR User Manual
Aerospace 2 x 30 A - 45 V Schottky rectifier
Features
■ Forward current: 2 x 30 A
■ Repetitive peak voltage: 45 V
■ Low forward voltage drop: 0.75 V
■ Maximum junction temperature: 175 °C
■ Negligible switching losses
■ Low capacitance
■ High reverse avalanche surge capability
■ Hermetic package
■ Target radiation qualification:
– 150 krad (Si) low dose rate
– 1 Mrad high dose rate
■ ESCC qualified
Description
This power Schottky rectifier is designed and
packaged to comply with the ESCC5000
specification for aerospace products. Housed in a
hermetically sealed surface mount package, it is
ideal for use in applications for aerospace and
other harsh environments.
STPS6045HR
TO-254
Figure 1. Device configuration
STPS6045CFSY1
STPS6045CFSYHRB
1
Terminal 1:
Terminal 2:
Terminal 3:
The case is not connected to any lead
Anode a
Common cathode
Anode b
3
2
The STPS6045HR is intended for use in medium
voltage applications and in high frequency circuits
where low switching losses and low noise are
required.
Table 1. Device summary
Order code
STPS6045CFSY1 -
STPS6045CFSYHRB 5106/018/01 ESCC flight -
November 2010 Doc ID 18184 Rev 1 1/8
ESCC part
number
Quality level EPPL Comment Package
Engineering
model
-
Single die TO-254
Lead
finish
Gold
Solder
dip
www.st.com
8
Characteristics STPS6045HR
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Characteristic Value Unit
(6)
(3)
(2)
(1)
(4) (5)
300 A
45 V
1A
30
A
40
-65 to +175 °C
I
FSM
V
RRM
I
RRM
I
O
I
F(RMS)
T
OP
Forward surge current (per diode)
Repetitive peak reverse voltage
Repetitive peak reverse current
Average output rectified current (50% duty cycle):
per diode
per device
Forward rms current (per diode) 30 A
Operating temperature range
(case temperature)
T
T
STG
T
SOL
Junction temperature +175 °C
J
(7)
(6)
-65 to +175 °C
+260 °C
Storage temperature range
Soldering temperature
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
1. Sinusoidal pulse of 10 ms duration
2. Pulsed, duration 5 ms, F = 50 Hz
3. Pulsed, duration 2 µs, F = 1 kHz
4. For T
5. The per device ratings apply only when both anode terminals are tied together.
6. For solder dip lead finish devices all testing performed at T
inert atmosphere.
7. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same
lead shall not be resoldered until 3 minutes have elapsed.
Table 3. Thermal resistance
> +138 °C per device and T
case
> +144 °C per device, derate linearly to 0 A at +175 °C.
case
> +125 °C shall be carried out in a 100%
amb
Symbol Characteristic Value Unit
Thermal resistance, junction to case
(1)
R
th(j-c)
1. Package mounted on infinite heatsink
2. The per device ratings apply only when both anode terminals are tied togther.
per diode
per device
(2)
1.7
1.2
°C/W
2/8 Doc ID 18184 Rev 1
STPS6045HR Characteristics
Table 4. Electrical measurements at ambiant temperature (per diode), T
Symbol Characteristic
I
R
(1)
V
F1
(1)
V
F2
(1)
V
F3
(1)
V
F4
C Capacitance 4001 V
Z
th(j-c)
1. Pulse width ≤ 300 µs, Duty Cycle ≤ 2%
2. Performed only during screening tests parameter drift values (initial measurements), go-no-go
3. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the R
Table 5. Electrical measurements at high and low temperatures (per diode)
Symbol Characteristic
s
MIL-STD-750
test method
Test conditions
= 22 ±3 °C
amb
Values
Min. Max.
Reverse current 4016 DC method, VR = 45V - 500 µA
Pulse method, I
= 5 A - 520 mV
F
Pulse method, IF = 10 A - 590 mV
Forward voltage 4011
Pulse method, IF = 20 A 650 mV
Pulse method, IF = 35 A 820
= 5 V, F = 1 MHz - 1.3 nF
R
= 15 to 40 A, tH = 50 ms
Relative thermal impedance,
(2)
junction to case
limits specified in maximum ratings.
th(j-c)
3101
MIL-STD-750
test method
I
H
IM = 50 mA, tmd = 100 µs
Test conditions
(1)
Calculate ΔV
Values
Min. Max.
(3)
F
Units
°C/W
Units
T
= +125 (+0, -5) °C
I
Reverse current 4016
R
(2)
V
F2
(2)
V
V
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2. Pulse width ≤ 300 µs, duty cycle ≤ 2%
Forward voltage 4011
F3
(2)
F4
case
DC method, VR = 45 V
T
= +125 (+0, -5) °C
case
pulse method, IF = 10 A
T
= +125 (+0, -5) °C
case
pulse method, IF = 20 A
T
= -55 (+0, -5) °C
case
pulse method, IF = 20 A
T
= +125 (+0, -5) °C
case
pulse method, IF = 35 A
-40mA
-530mV
-610mV
-800mV
-790mV
Doc ID 18184 Rev 1 3/8
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