ST STPS6045CP, STPS6045CPI, STPS6045CW User Manual

®

MAIN PRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

2x30 A

45 V

Tj (max) 175 °C

V

(max) 0.63 V

F

STPS6045CP/CPI/CW

POWER SCHOTTKY RECTIFIER

A1

K

A2

A2

K

A1

FEATURES AND BENEFITS

VERY SMALL CONDUCTION LOSSES

■

NEGLIGIBLE SWITCHING LOSSES

■

EXTREME FAST SWITCHING

■

LOW THERMAL RESISTANCE

■

INSULATED PACKAGE: TOP-3I

■

Insulating voltage = 2500V

RMS

Insulated

TOP-3I

STPS6045CPI

Capacitance = 12pF
AVALANCHE CAPABILITY SPECIFIED

■

DESCRIPTION

Dual center tap Schottky rectifier suited for

A1

A2

K

A2

K

A1

switchmode power supply and high frequency DC
to DC converters.

Packaged either in SOT-93, TOP-3I or TO-247,
this device is intended for use in low voltage, high

SOT-93

STPS6045CP

TO-247

STPS6045CW

frequency inverters, free wheeling and polarity
protection applications.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

Repetitive peak reverse voltage
RMS forward current
Average forward current

δ = 0.5

SOT-93
TO-247

TOP-3I

Tc = 150°C Per diode

Tc = 130°C Per device

Surge non repetitive forward current tp = 10 ms sinusoidal

Repetitive Peak reverse current tp=2µs square

45 V
60 A
30 A

60

400 A

1A

F = 1kHz

I

RSM

P

ARM

T

stg

Tj

dV/dt

Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage

3A

10600 W

- 65 to+ 175 °C
175 °C

10000 V/µs

dPtot

*:

<

dTj Rth j a

July 2003 - Ed: 7B

thermal runaway conditionfor a diode onits own heatsink

−1()

1/5

STPS6045CP/CPI/CW

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-c)

R

th (c)

Junction to case

When the diodes 1 and 2 are used simultaneously:

(diode 1) = P(diode1) x R

∆ T

J

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

*

I

R

Reverse leakage
current

V

*

F

Pulse test : ** tp = 380 µs, δ <2%

Forward voltage drop Tj = 125°CI

SOT-93 / TO-247

TOP-3I

SOT-93 / TO-247

TOP-3I 0.4

(Per diode) + P(diode 2) x R

th(j-c)

Tj = 25°C V
Tj = 125°C

Tj=25°CI
Tj = 125°C I

Per diode

Total

Per diode
Total

Coupling

R=VRRM

=30A

F

=60A

F

=60A

F

th(c)

0.95

°C/W

0.55

1.8

1.1

0.15

500 µA

20 80 mA

0.53 0.63 V

0.84

0.68 0.78

To evaluate the conduction losses use the following equation:
P=0.48xI

Fig. 1: Average forward power dissipation
versus average forward current (per diode).

PF(av)(W)

25

20

15

10

5

0

0 5 10 15 20 25 30 35 40

Fig. 3: Normalized avalanche power derating
versus pulse duration.

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

0.001

+ 0.005 I

F(AV)

δ = 0.05

0.10.01 1

δ = 0.1

F2(RMS)

δ = 0.2

IF(av) (A)

t (µs)

p

δ = 0.5

δ = 1

T

=tp/T

δ

10 100 1000

tp

Fig. 2: Average current versus ambient
temperature (δ=0.5, per diode).

IF(av)(A)

35
30
25
20
15
10

5
0

0 25 50 75 100 125 150 175

Fig. 4: Normalized avalanche power derating
versus junction temperature.

P(t)

P (25°C)

ARM

1.2
1

0.8

0.6

0.4

0.2
0

0 25 50 75 100 125 150

=tp/T

δ

ARM p

Rth(j-a)=Rth(j-c)

TOP-3I

Rth(j-a)=10°C/W

T

tp

Tamb(°C)

T (°C)

j

SOT-93
TO-247

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