ST STPS6045CP, STPS6045CPI, STPS6045CW User Manual

®	STPS6045CP/CPI/CW

POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

IF(AV)	2x30 A
VRRM	45 V
Tj (max)	175 °C
VF (max)	0.63 V

FEATURES AND BENEFITS

■VERY SMALL CONDUCTION LOSSES

■NEGLIGIBLE SWITCHING LOSSES

■EXTREME FAST SWITCHING

■LOW THERMAL RESISTANCE

■INSULATED PACKAGE: TOP-3I Insulating voltage = 2500VRMS Capacitance = 12pF

■AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap Schottky rectifier suited for switchmode power supply and high frequency DC to DC converters.

Packaged either in SOT-93, TOP-3I or TO-247, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

A1

K

A2

A2

K

A1

Insulated

TOP-3I

STPS6045CPI

	A2
A2
K	K
A1	A1

SOT-93	TO-247
STPS6045CP	STPS6045CW

ABSOLUTE RATINGS (limiting values, per diode)

Symbol							Parameter			Value	Unit
VRRM			Repetitive peak reverse voltage							45	V
IF(RMS)			RMS forward current							60	A
IF(AV)			Average forward current				SOT-93	Tc = 150°C	Per diode	30	A
			δ = 0.5				TO-247
										60
							TOP-3I	Tc = 130°C	Per device
IFSM			Surge non repetitive forward current					tp = 10 ms sinusoidal		400	A
IRRM				Repetitive Peak reverse current				tp = 2 µs square		1	A
								F = 1kHz
IRSM			Non repetitive peak reverse current					tp = 100 µs square		3	A
PARM			Repetitive peak avalanche power					tp = 1µs Tj = 25°C		10600	W
Tstg			Storage temperature range							- 65 to + 175	°C
	Tj		Maximum operating junction temperature *							175	°C
dV/dt			Critical rate of rise of reverse voltage							10000	V/µs
* :	dPtot		<		1	thermal runaway condition for a diode on its own heatsink
	dTj			Rth( j − a)

July 2003 - Ed: 7B	1/5

STPS6045CP/CPI/CW

THERMAL RESISTANCES

Symbol		Parameter		Value	Unit
Rth (j-c)	Junction to case	SOT-93 / TO-247	Per diode	0.95	°C/W
			Total	0.55
		TOP-3I	Per diode	1.8
			Total	1.1
Rth (c)		SOT-93 / TO-247	Coupling	0.15
		TOP-3I		0.4
When the diodes 1 and 2 are used simultaneously:
TJ(diode 1) = P(diode1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol	Parameter	Tests Conditions		Min.	Typ.	Max.	Unit
IR *	Reverse leakage	Tj = 25°C	V R = VRRM			500	µA
	current	Tj = 125°C			20	80	mA
VF *	Forward voltage drop	Tj = 125°C	IF = 30 A		0.53	0.63	V
		Tj = 25°C	IF = 60 A			0.84
		Tj = 125°C	I F = 60 A		0.68	0.78
Pulse test :	** tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.48 x IF(AV) + 0.005 IF2(RMS)

Fig. 1: Average forward power dissipation versus average forward current (per diode).

Fig. 2: Average current versus ambient temperature (δ=0.5, per diode).

PF(av)(W)
25			δ = 0.1	δ = 0.2	δ = 0.5			35
		δ = 0.05
								30
20
							δ = 1
								25
15								20
10								15
							T	10
5								5
			IF(av) (A)			δ=tp/T
								tp
0	5	10	15	20	25	30	35	0
0								40

IF(av)(A)
			Rth(j-a)=Rth(j-c)			SOT-93
						TO-247
					TOP-3I
			Rth(j-a)=10°C/W
	T
	δ=tp/T	tp	Tamb(°C)
0	25	50	75	100	125	150	175

Fig. 3: Normalized avalanche power derating versus pulse duration.

PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001			tp(µs)
0.01	0.1	1	10	100	1000
2/5

Fig. 4: Normalized avalanche power derating versus junction temperature.

	PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0			Tj(°C)
0	25	50	75	100	125	150