®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
T
j
(max)
V
F
FEATURES AND BENEFITS
■ High junction temperature capability
■ Low leakage current
■ Good trade off between leakage current and
forward voltage drop
■ Low thermal resistance
■ High frequency operation
■ Avalanche specification
2 x 30 A
170 V
175 °C
0.76 V
STPS60170C
A1
A2
K
A1
TO-220AB
STPS60170CT
Table 2: Order Code
Part Number Marking
K
A2
K
DESCRIPTION
STPS60170CT STPS60170CT
Dual center tab Schottky rectifier suited for High
Frequency Switched Mode Power Supplies.
Packaged in TO-220AB, this device is intended for
use to enhance the reliability of the application.
Table 3: Absolute Ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
T
Repetitive peak reverse voltage 170 V
RMS forward current 60 A
T
Average forward current
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature * 175 °C
j
= 150 °C δ = 0.5
c
t
= 10 ms sinusoidal
p
t
= 1 µs Tj = 25 °C
p
Per diode
Per device
17300 W
30
60
270 A
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Ptot
--------------
* : thermal runaway condition for a diode on its own heatsink
dTj
1
-------------- ------------
<
Rth j a–()
A
September 2005
REV. 1
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STPS60170C
Table 4: Thermal Parameters
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R
Junction to case
th(j-c)
(Per diode) + P(diode 2) x R
Per diode
Total
Coupling
th(c)
1.0
0.7
0.4
Table 5: Static Electrical Characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ Max. Unit
= 25 °C
T
I
*
R
V
F
Pulse test: * tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.60 x I
Reverse leakage current
**
Forward voltage drop
** tp = 380 µs,
δ < 2%
j
= 125 °C
T
j
T
= 25 °C
j
= 125 °C
T
j
T
= 25 °C
j
T
= 125 °C
j
V
R
I
F
I
F
= V
RRM
= 30 A
= 60 A
F(AV)
+ 0.053 I
F2(RMS)
35 µA
835 mA
0.94
0.72 0.76
0.97 1.05
0.86 0.92
°C/W
V
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