®
d
-
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
T
j
(max)
V
F
FEATURES AND BENEFITS
■ High junction temperature capability
■ Low leakage current
■ Good trade off between leakage current and
forward voltage drop
■ Low thermal resistance
■ High frequency operation
■ Avalanche specification
2 x 30 A
170 V
175 °C
0.76 V
STPS60170C
A1
A2
K
A1
TO-220AB
STPS60170CT
Table 2: Order Code
Part Number Marking
K
A2
K
DESCRIPTION
STPS60170CT STPS60170CT
Dual center tab Schottky rectifier suited for High
Frequency Switched Mode Power Supplies.
Packaged in TO-220AB, this device is intended for
use to enhance the reliability of the application.
Table 3: Absolute Ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
T
Repetitive peak reverse voltage 170 V
RMS forward current 60 A
T
Average forward current
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature * 175 °C
j
= 150 °C δ = 0.5
c
t
= 10 ms sinusoidal
p
t
= 1 µs Tj = 25 °C
p
Per diode
Per device
17300 W
30
60
270 A
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Ptot
--------------
* : thermal runaway condition for a diode on its own heatsink
dTj
1
-------------- ------------
<
Rth j a–()
A
September 2005
REV. 1
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STPS60170C
Table 4: Thermal Parameters
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R
Junction to case
th(j-c)
(Per diode) + P(diode 2) x R
Per diode
Total
Coupling
th(c)
1.0
0.7
0.4
Table 5: Static Electrical Characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ Max. Unit
= 25 °C
T
I
*
R
V
F
Pulse test: * tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.60 x I
Reverse leakage current
**
Forward voltage drop
** tp = 380 µs,
δ < 2%
j
= 125 °C
T
j
T
= 25 °C
j
= 125 °C
T
j
T
= 25 °C
j
T
= 125 °C
j
V
R
I
F
I
F
= V
RRM
= 30 A
= 60 A
F(AV)
+ 0.053 I
F2(RMS)
35 µA
835 mA
0.94
0.72 0.76
0.97 1.05
0.86 0.92
°C/W
V
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STPS60170C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
P
(W)
F(AV)
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35
d=0.05
d=0.1
I
F(AV)
d=0.2
(A)
d=0.5
d
=t /T
d=1
T
t
p
p
Figure 3: Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
I
(A)
F(AV)
35
30
25
20
15
10
5
0
T
=t /T
p
d
0 25 50 75 100 125 150 175
R
=15°C/W
th(j-a)
t
p
R
th(j-a)=Rth(j-c)
T
(°C)
amb
Figure 4: Normalized avalanche power
derating versus junction temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25
50 75 100 125 150
T (°C)
j
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
IM(A)
350
300
250
200
150
100
I
M
50
0
1.E-03 1.E-02 1.E-01 1.E+00
d=0.5
t
t(s)
TC=50°C
TC=75°C
TC=125°C
Figure 6: Relative variation of thermal
impedance junction to case versus pulse
duration
Z
th(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Single pulse
0.3
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
tP(s)
d
=t /T
T
t
p
p
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STPS60170C
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
IR(µA)
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
Figure 9: Forward voltage drop versus forward
current (per diode, low level)
IFM(A)
30
25
20
15
10
5
VFM(V)
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Tj=125°C
Tj=125°C
(Maximum values)
(Maximum values)
Tj=125°C
Tj=125°C
(Typical values)
(Typical values)
Tj=25°C
(Maximum values)
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
10000
V
OSC
F=1MHz
=30mV
Tj=25°C
RMS
1000
100
VR(V)
1 10 100 1000
Figure 10: Forward voltage drop versus
forward current (per diode, high level)
IFM(A)
1000
Tj=125°C
Tj=125°C
(Maximum values)
100
10
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
(Maximum values)
Tj=125°C
Tj=125°C
(Typical values)
(Typical values)
Tj=25°C
(Maximum values)
VFM(V)
4/6
Figure 11: TO-220AB Package Mechanical Data
A
C
L7
D
M
E
L2
F2
F1
H2
Dia
L5
L6
L9
L4
F
G1
G
STPS60170C
DIMENSIONS
REF.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Millimeters Inches
Min. Max. Min. Max.
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com.
Table 6: Ordering Information
Ordering type Marking Package Weight Base qty
Delivery
mode
STPS60170CT STPS60170CT TO-220AB 2.20 g 50 Tube
■ Epoxy meets UL94, V0
■ Cooling method: by conduction (C)
■ Recommended torque value: 0.55 Nm.
■ Maximum torque value: 0.7 Nm.
Table 7: Revision History
Date Revision Description of Changes
16-Sep-2005 1 First issue.
5/6
STPS60170C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
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