ST STPS60170C User Manual

ST STPS60170C User Manual

®

STPS60170C

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Table 1: Main Product Characteristics

IF(AV)

2 x 30 A

VRRM

170 V

Tj

175 °C

VF(max)

0.76 V

FEATURES AND BENEFITS

High junction temperature capability

Low leakage current

Good trade off between leakage current and forward voltage drop

Low thermal resistance

High frequency operation

Avalanche specification

DESCRIPTION

A1

K

A2

K

A2

K

A1

TO-220AB

STPS60170CT

Table 2: Order Code

Part Number

Marking

STPS60170CT STPS60170CT

Dual center tab Schottky rectifier suited for High Frequency Switched Mode Power Supplies. Packaged in TO-220AB, this device is intended for use to enhance the reliability of the application.

Table 3: Absolute Ratings (limiting values, per diode)

Symbol

 

 

Parameter

 

 

 

 

Value

Unit

 

 

 

 

 

 

 

 

 

 

 

VRRM

 

Repetitive peak reverse voltage

 

 

 

 

170

V

IF(RMS)

 

RMS forward current

 

 

 

 

60

A

 

IF(AV)

 

Average forward current

Tc = 150 °C

δ

= 0.5

Per diode

30

A

 

 

Per device

60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IFSM

 

Surge non repetitive forward current

 

 

tp = 10 ms sinusoidal

270

A

 

PARM

 

Repetitive peak avalanche power

 

 

tp = 1 µs Tj = 25 °C

17300

W

 

Tstg

 

Storage temperature range

 

 

 

 

-65 to + 175

°C

 

Tj

 

Maximum operating junction temperature *

 

 

 

175

°C

 

dV/dt

 

Critical rate of rise of reverse voltage

 

 

 

 

10000

V/µs

 

 

 

 

 

 

 

 

 

 

 

 

dPtot

1

 

 

 

 

 

 

 

* :

---------------

-------------------------

 

 

 

 

 

 

 

dTj < Rth(j a) thermal runaway condition for a diode on its own heatsink

 

 

 

September 2005

REV. 1

 

 

1/6

 

 

 

 

 

 

 

 

 

 

 

STPS60170C

Table 4: Thermal Parameters

Symbol

 

Parameter

Value

Unit

 

 

 

 

 

 

Rth(j-c)

Junction to case

 

Per diode

1.0

 

 

Total

0.7

°C/W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rth(c)

 

 

Coupling

0.4

 

When the diodes 1 and 2 are used simultaneously:

Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 5: Static Electrical Characteristics (per diode)

Symbol

Parameter

Tests conditions

 

 

Min.

Typ

Max.

Unit

 

 

 

 

 

 

 

 

 

 

IR *

Reverse leakage current

 

Tj = 25 °C

VR = VRRM

 

 

 

35

µA

 

Tj = 125 °C

 

 

8

35

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tj = 25 °C

IF = 30 A

 

 

 

0.94

 

 

 

 

 

 

 

 

 

 

VF **

Forward voltage drop

 

Tj = 125 °C

 

 

0.72

0.76

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tj = 25 °C

IF = 60 A

 

 

0.97

1.05

 

 

 

 

 

 

 

 

 

Tj = 125 °C

 

 

0.86

0.92

 

 

 

 

 

 

 

 

 

Pulse test:

* tp = 5 ms, δ < 2%

 

 

 

 

 

 

 

 

 

** tp = 380 µs, δ < 2%

 

 

 

 

2

 

 

 

To evaluate the conduction losses use the following equation: P = 0.60 x I

+ 0.053 I

 

 

 

 

 

 

 

F(AV)

 

 

F (RMS)

 

 

2/6

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