ST STPS60150C User Manual
®
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
T
j
(max) 0.76 V
V
F
2 x 30 A
150 V
175°C
FEATURES AND BENEFITS
■ High junction temperature capabiliy
■ Low leakage current
■ Low thermal resistance
■ High frequency operation
■ Avalanche specification
DESCRIPTION
Dual center tab Schottky rectifier suited for High
Frequency server and telecom base station
SMPS. Packaged in TO-220AB, this device combines high current rating and low volume to enhance both reliability and power density of the
application.
STPS60150C
POWER SCHOTTKY RECTIFIER
A1
A2
K
TO-220AB
STPS60150CT
Table 2: Order Codes
Part Number Marking
STPS60150CT STPS60150CT
K
A2
K
A1
Table 3: Absolute Ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
T
Repetitive peak reverse voltage 150 V
RMS forward voltage 60 A
Average forward current Tc = 150°C
δ = 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10ms sinusoidal 270 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 17300 W
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature * 175 °C
j
30
60
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
* : thermal runaway condition for a diode on its own heatsink
------------- --
dTj
October 2004
1
--------------- ----------->
Rth j a
–()
REV. 1
A
1/6
STPS60150C
Table 4: Thermal Parameters
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R
Table 5: Static Electrical Characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ Max. Unit
I
R
V
F
Pulse test: * tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.6 x I
Junction to case Per diode
Total
1.0
0.7
°C/W
Coupling 0.4
(Per diode) + P(diode 2) x R
th(j-c)
* Reverse leakage current Tj = 25°C VR = V
T
= 125°C 3 10 mA
j
th(c)
RRM
315 µA
** Forward voltage drop Tj = 25°C IF = 30A 0.94 V
= 125°C IF = 30A 0.72 0.76
T
j
T
= 25°C IF = 60A 0.97 1.05
j
= 125°C IF = 60A 0.86 0.92
T
j
** tp = 380 µs, δ < 2%
+ 0.0053 I
F(AV)
F2(RMS)
2/6
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