®
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
T
j
(max) 0.76 V
V
F
2 x 30 A
150 V
175°C
FEATURES AND BENEFITS
■ High junction temperature capabiliy
■ Low leakage current
■ Low thermal resistance
■ High frequency operation
■ Avalanche specification
DESCRIPTION
Dual center tab Schottky rectifier suited for High
Frequency server and telecom base station
SMPS. Packaged in TO-220AB, this device combines high current rating and low volume to enhance both reliability and power density of the
application.
STPS60150C
POWER SCHOTTKY RECTIFIER
A1
A2
K
TO-220AB
STPS60150CT
Table 2: Order Codes
Part Number Marking
STPS60150CT STPS60150CT
K
A2
K
A1
Table 3: Absolute Ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
T
Repetitive peak reverse voltage 150 V
RMS forward voltage 60 A
Average forward current Tc = 150°C
δ = 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10ms sinusoidal 270 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 17300 W
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature * 175 °C
j
30
60
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
* : thermal runaway condition for a diode on its own heatsink
------------- --
dTj
October 2004
1
--------------- ----------->
Rth j a
–()
REV. 1
A
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STPS60150C
Table 4: Thermal Parameters
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R
Table 5: Static Electrical Characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ Max. Unit
I
R
V
F
Pulse test: * tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.6 x I
Junction to case Per diode
Total
1.0
0.7
°C/W
Coupling 0.4
(Per diode) + P(diode 2) x R
th(j-c)
* Reverse leakage current Tj = 25°C VR = V
T
= 125°C 3 10 mA
j
th(c)
RRM
315 µA
** Forward voltage drop Tj = 25°C IF = 30A 0.94 V
= 125°C IF = 30A 0.72 0.76
T
j
T
= 25°C IF = 60A 0.97 1.05
j
= 125°C IF = 60A 0.86 0.92
T
j
** tp = 380 µs, δ < 2%
+ 0.0053 I
F(AV)
F2(RMS)
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STPS60150C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
P (W)
F(AV)
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35
δ = 0.1
δ = 0.05
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3: Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
I (A)
F(AV)
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
R=R
th(j-a) th(j-c)
R =15°C/W
th(j-a)
T (°C)
amb
Figure 4: Normalized avalanche power
derating versus junction temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
I (A)
M
350
300
250
200
150
100
I
M
50
0
1.E-03 1.E-02 1.E-01 1.E+00
t
δ
=0.5
t(s)
T =50°C
C
T =75°C
C
T =125°C
C
Figure 6: Relative variation of thermal
impedance junction to case versus pulse
duration (per diode)
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
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STPS60150C
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
I (µA)
R
1.E+05
T =150°C
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
0 25 50 75 100 125 150
j
T =125°C
j
T =100°C
j
T =75°C
j
T =50°C
j
T =25°C
j
V (V)
R
Figure 9: Forward voltage drop versus forward
current (per diode)
I (A)
FM
100.0
T =125°C
j
(maximum values)
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
10000
1000
V (V)
100
1 10 100 1000
R
F=1MHz
V =30mV
OSC RMS
T =25°C
j
T =125°C
10.0
1.0
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
j
(typical values)
V (V)
FM
T =25°C
j
(maximum values)
4/6
Figure 10: TO-220AB Package Mechanical Data
A
C
L7
D
M
E
L2
F2
F1
H2
Dia
L5
L6
L9
L4
F
G1
G
STPS60150C
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Table 6: Ordering Information
Ordering type Marking Package Weight Base qty
STPS60150CT STPS60150CT TO-220AB 2.20 g 50 Tube
■ Epoxy meets UL94, V0
■ Cooling method: by conduction (C)
■ Recommended torque value: 0.8 m.N.
■ Maximum torque value: 1.0 m.N.
Table 7: Revision History
Date Revision Description of Changes
19-Oct-2004 1 First issue.
Delivery
mode
5/6
STPS60150C
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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