ST STPS5L60 User Manual
Features
● Negligible switching losses
● Low forward voltage drop for higher
efficiency
● Low thermal resistance
● Avalanche capability specified
Description
STPS5L60
Power Schottky rectifier
A
K
K
A
Power Schottky rectifier suited for switch mode
power supplies and high frequency inverters.
This device is intended for use in low voltage
output for small battery chargers and consumer
SMPS such as DVD and set-top-box.
SMC
STPS5L60S
Table 1. Device summary
I
5 A
F(AV)
V
RRM
150 °C
T
j (max)
V
F (max)
DO-201AD
STPS5L60
60 V
0.53 V
May 2008 Rev 3 1/8
www.st.com
8
Characteristics STPS5L60
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
T
dV/dt Critical rate of rise of reverse voltage (rated V
dPtot
---------------
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 3. Thermal parameters
Repetitive peak reverse voltage 60 V
RMS forward current 15 A
DO-201AD T
Average forward current
SMC T
Surge non repetitive forward
current
Repetitive peak avalanche power
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature
j
1
--------------------------
<
Rth j a–()
Half wave, single phase
= 10 ms
t
p
= 1 µs Tj = 25 °C
t
p
(1)
= 100 °C δ = 0.5
l
= 100 °C δ = 0.5
l
150 A
4000 W
150 °C
, Tj = 25 °C) 10000 V/µs
R
5A
Symbol Parameter Value Unit
R
Junction to ambient
th (j-a)
th (j-l)
R
th (j-l)
Table 4. Static electrical characteristics
Junction to leads Lead length = 10mm 15
Junction to leads SMC 15
DO-201AD
75
°C/WR
Symbol Parameter Tests conditions Min. Typ. Max. Unit
0.22
mA
V
(1)
I
R
V
1. Pulse test : tp = 380 µs, δ < 2%
Reverse leakage current
(1)
Forward voltage drop
F
Tj = 25 °C
= 100 °C
T
j
T
= 125 °C
j
T
= 25 °C
j
= 100 °C
T
j
T
= 125 °C
j
VR = V
= 5 A
I
F
RRM
10 25
40 100
0.47 0.52
0.43 0.49
0.42 0.48
To evaluate the conduction losses use the following equation :
P = 0.39 x I
2/8
F(AV)
+ 0.028x I
F2(RMS)
STPS5L60 Characteristics
(av)(W)
Figure 1. Conduction losses versus average
current
PF
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
δ = 0.05
δ = 0.1
δ = 0.2
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
Figure 2. Average forward current versus
ambient temperature (
IF(av)(A)
6
5
4
3
2
1
=tp/T
δ
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-l)
DO-201AD
Rth(j-a)=75°C/W
T
tp
SMC
Rth(j-a)=90°C/W
δ = 0.5)
Tamb(°C)
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(t)
ARM j
P (25°C)
ARM
1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values) DO-201AD
IM(A)
16
14
12
10
8
6
4
I
M
2
0
1.E-03 1.E-02 1.E-01 1.E+00
t
δ
=0.5
t(s)
DO-201AD
Ta=25°C
Ta=75°C
Ta=125°C
T (°C)
0
j
25 50 75 100 125 150
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values) SMC
IM(A)
14
12
10
8
6
4
I
M
2
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
SMC
Ta=25°C
Ta=75°C
Ta=125°C
3/8
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