ST STPS5H100-Y User Manual

STPS5H100-Y

Automotive high voltage power Schottky rectifier

Features

■Negligible switching losses

■High junction temperature capability

■Low leakage current

■Good trade off between leakage current and forward voltage drop

■Avalanche specification

■AEC-Q101 qualified

Description

This high voltage Schottky barrier rectifier is packaged in DPAK, and designed for high frequency miniature switched mode power supplies such as adaptators and on board DC to DC converters for automotive applications.

K

A

NC

DPAK

STPS5H100BY

Table 1.	Device summary
	Symbol		Value
	IF(AV)		5 A
	VRRM		100 V
	Tj (max)		175 °C
	VF(max)		0.61 V

November 2011

Doc ID 17744 Rev 1

1/7

www.st.com

Characteristics

STPS5H100-Y

1

Characteristics

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS)

Forward rms current

10

A

IF(AV)

Average forward current

Tc = 165 °C, δ = 0.5

5

A

IFSM

Surge non repetitive forward current

tp =10 ms sinusoidal

75

A

IRRM

Repetitive peak reverse current

tp = 2 µs, F = 1 KHz

1

A

IRSM

Non repetitive peak reverse current

tp = 100 µs square

2

A

PARM

Repetitive peak avalanche power

tp = 1 µs

Tj = 25 °C

7200

W

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Operating junction temperature(1)

-40 to +175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

1.

dPtot <

1

condition to avoid thermal runaway for a diode on its own heatsink

Rth(j-a)

dTj

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

2.5

°C/W

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

(1)

Reverse leakage

Tj

= 25 °C

V

R

= V

RRM

3.5

µA

current

R

Tj

= 125 °C

1.3

4.5

mA

Tj

= 25 °C

IF = 5 A

0.73

VF(2)

Forward voltage drop

Tj = 125 °C

0.57

0.61

V

Tj

= 25 °C

IF = 10 A

0.85

Tj = 125 °C

0.66

0.71

1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.51 x IF(AV) + 0.02IF2(RMS)

2/7	Doc ID 17744 Rev 1

STPS5H100-Y	Characteristics
Figure 1. Average forward power dissipation Figure 2.	Average forward current versus
versus average forward current	ambient temperature (δ = 0.5)

PF(av)(W)													IF(av)(A)
4.0					δ = 0.1	δ = 0.2			δ = 0.5				6					Rth(j-a)=Rth(j-c)
3.5													5
			δ = 0.05
3.0
													4
2.5										δ = 1
																Rth(j-a)=80°C/W
2.0													3
1.5											T		2
1.0														T
0.5					IF(av) (A)				δ=tp/T		tp		1	δ=tp/T			Tamb(°C)
															tp
0.0													0
0.0	0.5	1.0	1.5	2.0	2.5	3.0	3.5	4.0	4.5	5.0	5.5	6.0	0	20	40	60	80	100	120	140	160	180

Figure 3. Normalized avalanche power derating versus pulse duration

Figure 4. Normalized avalanche power derating versus junction temperature

	PARM(tp)						PARM(Tj)
	PARM(1µs)						PARM(25 °C)
	1						1.2
							1
	0.1						0.8
							0.6
	0.01						0.4
							0.2
	0.001					tp(µs)	0					Tj(°C)
						1000
	0.01	0.1	1	10	100							1
							25	50	75	100	125

Figure 5. Non repetitive surge peak forward Figure 6.	Relative variation of thermal
current versus overload duration	impedance junction to case versus
(maximum values)	pulse duration

IM(A)						Zth(j-c)/Rth(j-c)
120					1.0
110
100					0.8
90
80					0.6	δ = 0.5
70				Tc=50°C
60
50				Tc=75°C	0.4	δ = 0.2
40						δ = 0.1			T
30				Tc=125°C
	IM				0.2
20							Single pulse
	t	t(s)					tp(s)
10								δ=tp/T
	δ=0.5				0.0				tp
0		1E-2	1E-1	1E+0			1E-2	1E-1	1E+0
1E-3					1E-3

Doc ID 17744 Rev 1

3/7