ST STPS5H100-Y User Manual

Automotive high voltage power Schottky rectifier

Features

■ Negligible switching losses

■ High junction temperature capability

■ Low leakage current

■ Good trade off between leakage current and

forward voltage drop

■ Avalanche specification

■ AEC-Q101 qualified

Description

This high voltage Schottky barrier rectifier is
packaged in DPAK, and designed for high
frequency miniature switched mode power
supplies such as adaptators and on board DC to
DC converters for automotive applications.

STPS5H100-Y

K

NC

DPAK

STPS5H100BY

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

(max) 175 °C

j

(max) 0.61 V

V

F

A

5 A

100 V

November 2011 Doc ID 17744 Rev 1 1/7

www.st.com

7

Characteristics STPS5H100-Y

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

I

I

P

T

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Repetitive peak reverse voltage 100 V

RRM

Forward rms current 10 A

Average forward current Tc = 165 °C, δ = 0.5 5 A

Surge non repetitive forward current tp =10 ms sinusoidal 75 A

FSM

Repetitive peak reverse current tp = 2 µs, F = 1 KHz 1 A

RRM

Non repetitive peak reverse current tp = 100 µs square 2 A

RSM

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 7200 W

ARM

Storage temperature range -65 to + 175 °C

stg

Operating junction temperature

T

j

<

Rth(j-a)

1

dPtot

dTj

(1)

-40 to +175 °C

Symbol Parameter Value Unit

R

Table 4. Static electrical characteristics

Junction to case 2.5 °C/W

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Reverse leakage

(1)

I

R

current

(2)

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

F

= 25 °C

T

j

= 125 °C 1.3 4.5 mA

T

j

= 25 °C

T

j

T

= 125 °C 0.57 0.61

j

= 25 °C

T

j

T

= 125 °C 0.66 0.71

j

= V

V

R

IF = 5 A

= 10 A

I

F

RRM

3.5 µA

0.73

0.85

To evaluate the conduction losses use the following equation:
P = 0.51 x I

F(AV)

+ 0.02I

F2(RMS)

V

2/7 Doc ID 17744 Rev 1

STPS5H100-Y Characteristics

(av)(A)

5

Figure 1. Average forward power dissipation

versus average forward current

PF(av)(W)

4.0

3.5

3.0

2.5

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

2.0

1.5

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

IF(av) (A)

δ

=tp/T

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1µs)

ARM

1

0.1

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

IF

6

Rth(j-a)=Rth(j-c)

5

4

T

Rth(j-a)=80°C/W

tp

Tamb(°C)

3

2

1

=tp/T

δ

0

0 20 40 60 80 100 120 140 160 180

Figure 4. Normalized avalanche power

derating versus junction
temperature

P(T)

ARM j

P (25 °C)

ARM

1.2

1

0.8

0.01

t (µs)

0.001

0.10.01 1

10 100

p

1000

Figure 5. Non repetitive surge peak forward

current versus overload duration
(maximum values)

IM(A)

120
110
100

90
80
70
60
50
40
30

IM

20
10

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=50°C

Tc=75°C

Tc=125°C

0.6

0.4

0.2

0

25 50 75 100 125

Figure 6. Relative variation of thermal

impedance junction to case versus
pulse duration

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

δ = 0.2

0.4

δ = 0.1

0.2

Single pulse

tp(s)

0.0
1E-3 1E-2 1E-1 1E+0

δ

T

=tp/T

tp

T (°C)

j

1

Doc ID 17744 Rev 1 3/7