ST STPS5H100 User Manual

STPS5H100

High voltage power Schottky rectifier

Main product characteristics

IF(AV)	5 A
VRRM	100 V
Tj (max)	175° C
VF(max)	0.61 V

Features and benefits

■Negligible switching losses

■High junction temperature capability

■Low leakage current

■Good trade off between leakage current and forward voltage drop

K

K

	A	A
	NC	K
		NC
	DPAK	IPAK
	STPS5H100B	STPS5H100H

■ Avalanche specification

Description

This high voltage Schottky barrier rectifier is packaged in DPAK and IPAK, and designed for high frequency miniature switched mode power supplies such as adaptators and on board DC to DC converters.

Table 1. Absolute ratings (limiting values)

Order codes

Part number	Marking
STPS5H100B	S5H100
STPS5H100B-TR	S5H100
STPS5H100H	S5H100H

	Symbol			Parameter			Value		Unit
	VRRM			Repetitive peak reverse voltage			100		V
	IF(RMS)			RMS forward voltage			10		A
	IF(AV)			Average forward current		Tc = 165° C δ = 0.5	5		A
	IFSM			Surge non repetitive forward current		tp =10 ms sinusoidal	75		A
	IRRM			Repetitive peak reverse current		tp = 2 µs F = 1 KHz	1		A
	IRSM			Non repetitive peak reverse current		tp = 100 µs square	2		A
	PARM			Repetitive peak avalanche power		tp = 1 µs Tj = 25° C	7200		W
	Tstg			Storage temperature range			-65 to + 175		°C
	Tj			Maximum operating junction temperature(1)			175		°C
	dV/dt			Critical rate of rise of reverse voltage			10000		V/µs
1.	dPtot			1
	dTj	< Rth(j – a) condition to avoid thermal runaway for a diode on its own heatsink
	---------------	-------------------------
March 2007					Rev 9			1/8
								www.st.com

Characteristics	STPS5H100

1 Characteristics

Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

2.5

°C/W

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I (1)

Reverse leakage current

Tj = 25° C

V

= V

3.5

µA

R

RRM

R

Tj = 125° C

1.3

4.5

mA

Tj = 25° C

IF = 5 A

0.73

VF(2)

Forward voltage drop

Tj = 125° C

0.57

0.61

V

Tj = 25° C

IF = 10 A

0.85

Tj = 125° C

0.66

0.71

1.Pulse test: tp = 5 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.51 x IF(AV) + 0.02IF2(RMS)

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STPS5H100	Characteristics
Figure 1. Average forward power dissipation Figure 2.	Average forward current versus
versus average forward current	ambient temperature (δ = 0.5)

PF(av)(W)													IF(av)(A)
4.0					δ = 0.1	δ = 0.2			δ = 0.5				6					Rth(j-a)=Rth(j-c)
3.5													5
			δ = 0.05
3.0
													4
2.5										δ = 1
																Rth(j-a)=80°C/W
2.0													3
1.5											T		2
1.0														T
0.5					IF(av) (A)				δ=tp/T		tp		1	δ=tp/T			Tamb(°C)
															tp
0.0													0
0.0	0.5	1.0	1.5	2.0	2.5	3.0	3.5	4.0	4.5	5.0	5.5	6.0	0	20	40	60	80	100	120	140	160	180

Figure 3. Normalized avalanche power	Figure 4. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

PARM(tp)							PARM(tp)
PARM(1µs)
						PARM(25°C)
1
						1.2
						1
0.1						0.8
						0.6
0.01						0.4
						0.2			Tj(°C)
0.001			tp(µs)			0
0.01	0.1	1	10	100	1000	0	25	50	75	100	125	150

Figure 5. Non repetitive surge peak forward Figure 6. current versus overload duration

(maximum values)

Relative variation of thermal impedance junction to case versus pulse duration

IM(A)						Zth(j-c)/Rth(j-c)
120					1.0
110
100					0.8
90
80					0.6	δ = 0.5
70				Tc=50°C
60
50				Tc=75°C	0.4	δ = 0.2
40						δ = 0.1			T
30				Tc=125°C
	IM				0.2
20							Single pulse
	t	t(s)					tp(s)
10								δ=tp/T
	δ=0.5				0.0				tp
0		1E-2	1E-1	1E+0			1E-2	1E-1	1E+0
1E-3					1E-3

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