ST STPS50U100C User Manual
STPS50U100C
ULVF™ power Schottky rectifier
Features
■ ultralow forward voltage drop
■ high current capability
■ high frequency operation
Description
The STPS50U100C is a dual power Schottky
diode rectifier, suited for high frequency switch
mode power supplies.
Featuring an ultralow forward voltage (ULVF)
drop, this device, packaged in TO-220AB and
2
I
PAK, is intended to be used in notebook, game
station and desktop adaptors as well as server
SMPS. It has been especially designed to help
power supply manufacturers meet the recently
introduced worldwide efficiency standards.
A1
A2
A2
K
A1
K
TO-220AB
STPS50U100CT
Table 1. Device summary
STPS50U100CR
Symbol Value
I
F(AV)
V
RRM
(typ) (25 A @ 125 °C) 0.64 V
V
F
T
(max) 150 °C
j
2
PAK
I
2 x 25 A
A1
100 V
A2
K
TM: ULVF is a trademark of STMicroelectronics
November 2010 Doc ID 16603 Rev 2 1/8
www.st.com
8
Characteristics STPS50U100C
1 Characteristics
Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
T
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Repetitive peak reverse voltage 100 V
RRM
Forward rms current 50 A
Average forward current, δ = 0.5
Surge non repetitive forward current tp = 10 ms, half sine-wave 250 A
FSM
Storage temperature range -65 to + 150 °C
stg
T
Maximum operating junction temperature
j
<
Rth(j-a)
1
dPtot
dTj
(1)
TC = 120 °C
= 105 °C
T
C
Per diode
Per device
25
50
150 °C
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junction to case
Per diode
Per device
Coupling 0.45 °C/W
1.3
0.9
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔT
(diode 1) = P(diode1) x R
j
Table 4. Static electrical characteristics
(Per diode) + P(diode2) x R
th(j-c)
th(c)
A
Symbol Parameter Tests conditions Min. Typ. Max. Unit
= 25 °C
T
Reverse leakage current
I
R
V
Forward voltage drop
F
j
= 125 °C - 10 - mA
T
j
= 25 °C
T
j
T
= 125 °C - 15 40 mA
j
T
= 25 °C
j
T
= 125 °C - 0.38 -
j
T
= 25 °C
j
Tj = 125 °C - 0.54 -
T
= 25 °C
j
= 125 °C - 0.64 0.7
T
j
VR = 70 V
= V
V
R
RRM
= 5 A
I
F
= 15 A
I
F
IF = 25 A
To evaluate the conduction losses use the following equation: P = 0.475 x I
-15-µA
-30200µA
-0.48-
-0.58-
-0.670.73
+ 0.009 I
F(AV)
F2(RMS)
2/8 Doc ID 16603 Rev 2
V
STPS50U100C Characteristics
Figure 1. Average forward power dissipation
versus average forward current
(per diode)
P
(W)
F(AV)
28
δ = 0.1
24
20
16
12
8
4
0
0 5 10 15 20 25 30 35
δ = 0.05
δ = 0.2
δ = tp/T
δ = tp/T
δ = 0.5
T
T
t
t
p
p
δ = 1
I
F(AV)
(A)
Figure 3. Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
IR(mA)
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
0 102030405060708090100
Tj= 150 °C
Tj= 125 °C
Tj= 100 °C
Tj= 75 °C
Tj= 50 °C
Tj= 25 °C
VR(V)
Figure 5. Relative variation of thermal
impedance junction to case versus
pulse duration
Z
th(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
tp(s)
Figure 2. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
IM(A)
250
225
200
175
150
125
100
75
50
I
M
25
0
1.E-03 1.E-02 1.E-01 1.E+00
δ = 0.5
t
T = 25 °C
c
T = 75 °C
c
T = 125 °C
c
t(s)
Figure 4. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
I
(A)
F(AV)
30
R
= R
th(j-a)
25
20
15
10
5
0
T
δ = tp/T
0 25 50 75 100 125 150
t
p
th(j-c)
T
amb
(°C)
Figure 6. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
10000
1000
100
1 10 100
V
osc
F = 1 MHz
= 30 mV
Tj= 25 °C
RMS
VR(V)
Doc ID 16603 Rev 2 3/8
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