ST STPS5045S User Manual

STPS5045S

Power Schottky rectifier

Datasheet − production data

Features

■ Low forward voltage drop

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low thermal resistance

■ 200 °C maximum junction temperature

■ Avalanche rated

Description

This device is a dual center tap Schottky rectifier
suited for switch mode power supply and high
frequency DC to DC converters.

Packaged in D
intended for use in low voltage, high frequency
inverters, freewheeling and polarity protection
applications. Also ideal for PV cell-bypass diode
for junction and smart junction boxes.

2

PAK, this device is especially

A

A

K

A

A

D2PAK

STPS5045SG-TR

j

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

(max) 200 °C

j

(max) 0.48 V

V

F

K

50 A

45 V

June 2012 Doc ID022861 Rev 1 1/7

This is information on a product in full production.

www.st.com

7

Characteristics STPS5045S

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

T

T

1. condition to avoid thermal runaway for a diode on its own heatsink

2. Maximum operating junction temperature only in DC forward mode

Table 3. Thermal resistance

Repetitive peak reverse voltage 45 V

RRM

Forward rms current 90 A

Average forward current δ = 0.5 Tc = 135 °C 50 A

Surge non repetitive forward current tp = 10 ms sinusoidal 600 A

FSM

Repetitive peak avalanche power tp = 10 µs Tj = 125 °C 1200 W

ARM

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature in DC forward mode

(1)

j

Maximum operating junction temperature +175 °C

<

Rth(j-a)

1

dPtot

dTj

(2)

+200 °C

Symbol Parameter Value Unit

R

Table 4. Static electrical characteristics

Junction to case 1.0 °C/W

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

R

(2)

Forward voltage drop

F

= 25 °C VR = V

T

j

= 75 °C VR = 20 V 0.7 1.9

j

= 125 °C VR = V

T

j

= 25 °C

T

j

T

= 125 °C 0.48 0.56

j

T

= 200 °C

j

RRM

RRM

= 50 A

I

F

I

= 10 A 0.22

F

=20 A 0.28

I

F

0.090 0.36

65 185

0.55 0.61

mAT

V

To evaluate the conduction losses use the following equation:
P = 0.38 x I

2/7 Doc ID022861 Rev 1

F(AV)

+ 0.0036 I

F2(RMS)

STPS5045S Characteristics

0

Figure 1. Average forward power dissipation

versus average forward current

Figure 2. Average forward current versus

ambient temperature
(δ = 0.5)

I (A)

P (W)

F(AV)

45

40

35

30

25

20

15

10

5

0

δ = 0.05

0 1020304050 6070

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

δ = 1

T

=tp/T

Figure 3. Normalized avalanche power

derating versus pulse duration

tp

F(AV)

60

R

50

40

30

20

10

0

T

t

=t /T

δ

0 25 50 75 100 125 150 175

p

p

th(j-a)=Rth(j-c)

T (°C)

amb

Figure 4. Relative variation of thermal

impedance junction to case versus
pulse duration

P(t)

ARM p

P (10µs)

ARM

1

0.1

0.01

t (µs)

0.001
1 10 100 100

p

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Doc ID022861 Rev 1 3/7