ST STPS41L60C User Manual
STPS41L60C
Power Schottky rectifier
Features
■ Low forward voltage drop
■ Negligible switching losses
■ Low thermal resistance
■ Avalanche capability specified
Description
These dual center tap Schottky rectifiers are
suited for switch mode power supplies and high
frequency DC to DC converters.
V
2
PA K , I2PAK and TO-220AB, this
2 x I
I
"Forward"
O
I
F
I
O
I
R
V
V
F(Io)
To
I
AR
V
I
RRM
V
R
"Reverse"
(a)
X
X
V
V
V
F(2xIo)
F
Packaged in D
device is intended for use in low voltage, high
frequency inverters, free-wheeling and polarity
protection applications.
Figure 1. Electrical characteristics
V
AR
A1
A2
K
A2
K
A1
2
I
PAK
K
STPS41L60CR
K
A1
2
D
PAK
STPS41L60CG
Table 1. Device summary
I
2 x 20 A
F(AV)
V
RRM
150 °C
T
j (max)
V
F (max)
K
A1
TO-220AB
STPS41L60CT
A2
60 V
0.58 V
A2
K
a. V
and I
ARM
operating area defined in Figure 12 V
pulse measurements (t
are static characteristics
must respect the reverse safe
ARM
< 1 µs). VR, IR, V
p
and IAR are
AR
RRM
and VF,
July 2011 Doc ID 8616 Rev 6 1/9
www.st.com
9
Characteristics STPS41L60C
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
P
ARM
V
ARM
V
ASM
T
1. For temperature or pulse time duration deratings, refer to Figure 4 and Figure 5. More details regarding the avalanche
2. Refer to Figure 12
3. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistances
Repetitive peak reverse voltage 60 V
RRM
Forward rms current 30 A
Average forward current
Surge non repetitive forward current tp = 10 ms Sinusoidal 220 A
FSM
(1)
Repetitive peak avalanche power
(2)
Maximum repetitive peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 35 A 80 V
(2)
Maximum single pulse peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 35 A 80 V
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature
T
j
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
dPtot
--------------dTj
1
--------------------------
<
Rth j a–()
TC = 125 °C
δ = 0.5
tp = 1 µs T
(3)
= 25 °C
j
Per diode
Per device
20
40
9500 W
150 °C
A
Symbol Parameter Value Unit
R
Junction to case
th (j-c)
R
th (c)
Coupling 0.1
Per diode
To tal
1.5
0.8
° C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
(1)
I
R
(1)
V
F
1. Pulse test: tp = 380 µs, δ < 2%
T
Reverse leakage current
T
T
T
Forward voltage drop
T
T
(Per diode) + P(diode 2) x R
th(j-c)
= 25 °C
j
= 125 °C
j
= 25 °C
j
= 125 °C
j
= 25 °C
j
= 125 °C
j
V
= V
R
I
= 20 A 0.60
F
= 20 A 0.50 0.58
I
F
IF = 40A 0.77
I
= 40A 0.67 0.71
F
RRM
th(c)
600
µA
100 175
mA
V
To evaluate the conduction losses use the following equation:
P = 0.42 x I
+ 0.007 x I
F(AV)
F2(RMS)
2/9 Doc ID 8616 Rev 6
STPS41L60C Characteristics
Figure 2. Conduction losses versus
average current
P (W)
F(av)
16
14
12
10
8
6
4
2
0
0 5 10 15 20 25
δ=0.1
δ=0.05
δ=0.2
I (A)
F(av)
δ=0.5
δ
=tp/T
Figure 4. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1 µs)
ARM
1
0.1
Figure 3. Average forward current versus
ambient temperature (
I (A)
F(av)
δ=1
T
22
20
18
16
14
12
10
8
6
4
tp
2
0
0 25 50 75 100 125 150
R
th(j-a)
=50 °C/W
R
th(j-a)=Rth(j-c)
T (°C)
amb
δ
=tp/T
δ = 0.5)
T
tp
Figure 5. Normalized avalanche power
derating versus junction
temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values)
I (A)
M
250
225
200
175
150
125
100
75
50
I
M
25
0
1.E-03 1.E-02 1.E-01 1.E+00
t
=0.5
δ
t(s)
Tc=25 °C
Tc=75 °C
Tc=125 °C
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 7. Relative variation of thermal
impedance junction to case versus
pulse duration
Z/R
th(j-c) th(j-c)
1.0
Single pulse
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
δ
=tp/T
T
tp
Doc ID 8616 Rev 6 3/9
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