ST STPS41H100C User Manual

STPS41H100C

2

Low drop power Schottky rectifier

Datasheet − production data

Features

■ Negligible switching losses

■ Low leakage current

■ Good trade off between leakage current and

forward voltage drop

■ Low thermal resistance

■ Avalanche capability specified

Description

Dual center tab Schottky rectifier suited for switch
mode power supply and high frequency DC to DC
converters.

2

Packaged in D
device is intended for use in high frequency
inverters.

PAK , I2PAK and TO-220AB, this

A1

K

A2

A

K

A1

I2PAK

STPS41H100CR

K

A1

2

D

PAK

STPS41H100CG

j

Table 1. Device summary

A2

K

A1

TO-220AB

STPS41H100CT

A2

Symbol Value

I

F(AV)

V

RRM

(max) 175 °C

T

j

(max) 0.67 V

V

F

2 x 20 A

100 V

April 2012 Doc ID 8613 Rev 5 1/9

This is information on a product in full production.

www.st.com

9

Characteristics STPS41H100C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

I

P

T

Repetitive peak reverse voltage 100 V

RRM

Forward rms current 30 A

T

= 50 °C

Average forward current

Surge non repetitive forward current tp = 10 ms sinusoidal 220 A

FSM

Repetitive peak reverse current tp = 2 µs square F= 1 kHz 1 A

RRM

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 18100 W

ARM

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

c

δ = 0.5

(1)

Per diode
Per device

20

40

175 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

<

Rth(j-a)

1

dPtot

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance

Symbol Parameter Value Unit

Per diode 1.5

R

R

Junction to case

th(j-c)

Coupling 0.1

th(c)

°C/WTo ta l 0 .8

When the diodes 1 and 2 are used simultaneously:

A

ΔTj(diode 1) = P(diode1) x R

Table 4. Static electrical characteristics (per diode)

(Per diode) + P(diode 2) x R

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 25 °C

T

Reverse leakage

(1)

I

R

current

(1)

V

1. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

F

j

T

= 125 °C 3 10 mA

j

= 25 °C IF = 20 A 0.80

T

j

T

= 125 °C IF = 20 A 0.62 0.67

j

= 25 °C IF = 40 A 0.90

T

j

= 125 °C IF = 40 A 0.70 0.76

T

j

V

R

To evaluate the conduction losses use the following equation:
P = 0.58 x I

2/9 Doc ID 8613 Rev 5

F(AV)

+ 0.0045 I

F2(RMS)

= V

th(c)

10 μA

RRM

V

STPS41H100C Characteristics

Figure 1. Conduction losses versus average

current

PF(av)(W)

16

14

12

10

8

6

4

2

0

0 5 10 15 20 25

δ = 0.05

δ = 0.2

δ = 0.1

IF(av)(A)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 5. Non repetitive surge peak forward

current versus overload duration
(maximum values)

IM(A)

300

250

200

150

100

IM

50

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

Tc=25°C

Tc=75°C

Tc=125°C

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

IF(av)(A)

22

20
18

16
14

12
10

8
6

4
2

=tp/T

δ

0

0 25 50 75 100 125 150 175

Rth(j-a)=50°C/W

T

tp

Rth(j-a)=Rth(j-c)

Tamb(°C)

Figure 4. Normalized avalanche power

derating versus junction
temperature

P)

ARM (Tj

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

T (°C)

0

j

25 50 75 100 125 150

Figure 6. Relative variation of thermal

impedance junction to case versus
pulse duration

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4

δ = 0.2

δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

tp(s)

δ

=tp/T

T

tp

Doc ID 8613 Rev 5 3/9