ST STPS40SM120C User Manual
STPS40SM120C
Power Schottky rectifier
Datasheet − production data
Features
■ High current capability
■ Avalanche rated
■ Low forward voltage drop
■ High frequency operation
Description
This Schottky diode is suited for high frequency
switch mode power supply.
Packaged in TO-220AB, TO-220AB narrow leads
2
PAK, this device is intended to be used in
and I
notebook, game station and desktop adapters,
providing in these applications a good efficiency
at both low and high load.
Figure 1. Electrical characteristics
2 x I
I
"Forward"
O
V
I
(a)
X
A1
A2
K
A2
A1
K
TO-220AB narrow leads
STPS40SM120CTN
K
TO-220AB
STPS40SM120CT
K
K
A1
I2PAK
STPS40SM120CR
A2
A1
K
A2
K
I
F
I
V
RRM
V
V
a. V
ARM
operating area defined in Figure 9. V
pulse measurements (t
V
, are static characteristics
F
AR
and I
R
"Reverse"
must respect the reverse safe
ARM
O
< 10 µs). VR, IR, V
p
X
F
V
RRM
V
F(2xIo)
and
I
R
V
V
To
I
AR
V
F(Io)
and IAR are
AR
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
(max) 150 °C
T
j
(typ) 0.46 V
V
F
2 x 20 A
120 V
April 2012 Doc ID 022917 Rev 1 1/9
This is information on a product in full production.
www.st.com
9
Characteristics STPS40SM120C
1 Characteristics
Table 2. Absolute ratings (limiting values per diode at T
otherwise specified)
Symbol Parameter Value Unit
= 25 °C, unless
amb
V
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
V
ARM
V
ASM
T
1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application
notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement
using Schottky rectifier avalanche specification”.
2. See Figure 9
3. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Repetitive peak reverse voltage 120 V
RRM
Forward rms current 30 A
Average forward current, δ = 0.5
Per diode T
Per device T
= 125 °C 20
c
= 115 °C 40
c
Surge non repetitive forward current tp = 10 ms sinusoidal 210 A
(1)
Repetitive peak avalanche power Tj = 125 °C, tp = 10 µs 1150 W
Maximum repetitive peak
(2)
avalanche voltage
Maximum single-pulse
(2)
peak avalanche voltage
Storage temperature range -65 to +175 °C
stg
Maximum operating junction temperature
T
j
<
Rth(j-a)
1
dPtot
dTj
< 10 µs, Tj < 125 °C, IAR < 7.7 A 150 V
t
p
< 10 µs, Tj < 125 °C, IAR < 7.7 A 150 V
t
p
(3)
150 °C
Symbol Parameter Value Unit
R
R
Junction to case
th(j-c)
Coupling 0.50
th(c)
Per diode 1.35
°C/WTo t al 0 . 93
A
When the two diodes 1 and 2 are used simultaneously:
ΔT
(diode 1) = P(diode 1) x R
j
2/9 Doc ID 022917 Rev 1
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STPS40SM120C Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
R
V
F
Reverse leakage current
(2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: t
= 380 µs, δ < 2%
p
= 25 °C
T
j
= 125 °C - 20 50 mA
T
j
= 125 °C IF = 5 A - 0.46 0.51
T
j
T
= 125 °C
j
= 25 °C
T
j
= 125 °C - 0.63 0.69
T
j
V
= V
R
I
= 10 A
F
I
= 20 A
F
RRM
- 55 275 µA
- 0.55 0.60
-0.83
To evaluate the conduction losses use the following equation:
P = 0.52 x I
Figure 2. Average forward power dissipation
versus average forward current (per
diode)
P (W)
F(AV)
20
16
12
δ = 0.05
8
4
0
0 4 8 1216202428
δ = 0.2
δ = 0.1
Figure 4. Normalized avalanche power
derating versus pulse duration
+ 0.0085 x I
F(AV)
T
δ = t / T
p
δ = 0.5
t
p
F2(RMS)
δ = 1
I (A)
F(AV)
Figure 3. Average forward current versus
ambient temperature (δ = 0.5, per
diode)
I (A)
F(AV)
24
R
= R
th(j-a)
T (°C)
amb
th(j-c)
20
16
12
8
4
0
0 25 50 75 100 125 150
Figure 5. Relative variation of thermal
impedance junction to case versus
pulse duration
P(tp)
ARM
P (10 µs)
ARM
1
0.1
0.01
0.001
1 10 100 1000
t (µs)
p
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Single pulse
0.3
0.2
0.1
0.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
V
Doc ID 022917 Rev 1 3/9
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