ST STPS40SM100C User Manual

STPS40SM100C

Power Schottky rectifier

Features

■ High current capability

■ Avalanche rated

■ Low forward voltage drop current

■ High frequency operation

Description

This Schottky rectifier is suited for high frequency switch mode power supply.

Packaged in TO-220AB, D device is intended to be used in notebook, game station and desktop adaptors, providing in these applications a good efficiency at both low and high load.

Table 1. Device summary

I

F(AV)

V

RRM

(max) 150 °C

T

j

(typ) 0.435 V

V

F

2

PAK and I2PAK, this

2 x 20 A

100 V

A(1)

K(2)

A(3)

K

A

K

TO-220AB

STPS40SM100CT

A

I2PAK

STPS40SM100CR

K

A

2

PA K

D

STPS40SM100CG-TR

Figure 1. Electrical characteristics

2 x I

O

I

"Forward"

X

V

I

A

K

(a)

I

F

I

V

RRM

V

a. V

ARM

operating area defined in Figure 11. V pulse measurements (t are static characteristics

AR

and I

R

"Reverse"

must respect the reverse safe

ARM

O

< 1 µs). VR, IR, V

p

I

R

V

To

I

AR

V

F(Io)

X

V

F(2xIo)

F

and IAR are

AR

and VF,

RRM

V

April 2010 Doc ID 15525 Rev 2 1/9

www.st.com

9

Characteristics STPS40SM100C

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

V

ARM

V

ASM

T

1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2. Refer to Figure 11.

3. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Repetitive peak reverse voltage 100 V

Forward current rms 60 A

= 130 °C Per diode 20

T

Average forward current δ = 0.5

c

T

= 125 °C Per device 40

c

Surge non repetitive forward current tp = 10 ms sinusoidal 530 A

(1)

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 18000 W

< 1 µs Tj < 150 °C

(2)

Maximum repetitive peak avalanche voltage

(2)

Maximum single pulse peak avalanche voltage

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

dPtot

--------------dTj

1

--------------------------

<

Rth j a–()

(3)

t

p

< 45 A

I

AR

t

< 1 µs Tj < 150 °C

p

IAR < 45 A

120 V

150 °C

Symbol Parameter Value Unit

R

th(j-c)

R

th(c)

Table 4. Static electrical characteristics (per diode, at 25 °C unless otherwise specified)

Junction to case

Coupling 0.1

Per diode To t al

1.3

0.7

°C/W

Symbol Parameter Test conditions Min. Typ. Max. Unit

A

(1)

I

R

V

F

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

= 380 µs, δ < 2%

p

Tj = 25 °C

= 125 °C 7 mA

T

j

= 25 °C

T

j

= 125 °C 13 45 mA

T

j

T

= 25 °C

j

= 125 °C 435

T

j

= 25 °C

T

j

= 125 °C 520 580

T

j

= 25 °C

T

j

= 125 °C 605 665

T

j

V

I

F

I

F

I

F

To evaluate the conduction losses use the following equation: P = 0.580 x I

2/9 Doc ID 15525 Rev 2

+ 0.0043 x I

F(AV)

F2(RMS)

= 70 V

R

= 100 V

R

= 5 A

= 10A

= 20 A

7µA

13 45 µA

520

620 700

mV

740 810

STPS40SM100C Characteristics

Figure 2. Average forward power dissipation

versus average forward current (per diode)

PF(av)(W)

18

δ=1

δ

δ=0.5

=tp/T

T

tp

16

14

12

10

8

6

4

2

0

0 2 4 6 8 1012141618202224

δ=0.05

I (av)(A)

F

δ=0.1

δ=0.2

Figure 4. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 3. Average forward current versus

ambient temperature (δ = 0.5, per diode)

I

(A)

(av)

F

22

20

18

16

14

12

10

8

6

4

2

0

0 25 50 75 100 125 150

δ

=tp/T

T

tp

R

=15 °C/W

th(j-a)

T (°C)

amb

R

th(j-a)=Rth(j-c)

Figure 5. Normalized avalanche power

derating versus junction temperature

P(Tj)

ARM

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 6. Non repetitive surge peak forward

current versus overload duration, maximum values, per diode

I

(A)

M

350

300

250

200

150

100

I

M

50

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

Tc=25 °C

Tc=75 °C

Tc=125 °C

Doc ID 15525 Rev 2 3/9

Figure 7. Relative variation of thermal

impedance junction to case versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Single pulse

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

tp(s)

δ

T

=tp/T

tp