ST STPS40M80C User Manual
STPS40M80C
Power Schottky rectifier
Features
■ High junction temperature capability
■ Optimized trade-off between leakage current
and forward voltage drop
■ Low leakage current
■ Avalanche capability specified
Description
This dual diode Schottky rectifier is suited for high
frequency switch mode power supply.
Packaged in TO-220AB, I
device is particularly suited for use in notebook,
game station, LCD TV and desktop adapters,
providing these applications with a good
efficiency at both low and high load.
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
(max) 175 °C
T
j
(typ) 475 mV
V
F
2
PAK and D2PAK, this
2 x 20 A
80 V
A1
K
A2
K
K
A2
K
A1
2
I
PAK
STPS40M80CR
A1
2
PAK
D
STPS40M80CG-TR
K
A2
K
A1
TO-220AB
STPS40M80CT
Figure 1. Electrical characteristics
2 x I
O
I
"Forward"
X
V
I
A2
(a)
I
F
I
V
RRM
V
V
a. V
ARM
operating area defined in Figure 11. V
pulse measurements (t
are static characteristics
AR
and I
R
"Reverse"
must respect the reverse safe
ARM
O
< 1 µs). VR, IR, V
p
I
R
V
To
I
AR
V
F(Io)
X
V
V
F(2xIo)
F
and IAR are
AR
and VF,
RRM
V
April 2011 Doc ID 018718 Rev 1 1/10
www.st.com
10
Characteristics STPS40M80C
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode, at T
otherwise specified)
Symbol Parameter Value Unit
= 25 °C unless
amb
V
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
V
ARM
V
ASM
T
1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
2. See Figure 11
3. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Repetitive peak reverse voltage 80 V
RRM
Forward rms current 30 A
Average forward current, δ = 0.5
Surge non repetitive
forward current
(1)
Repetitive peak avalanche power Tj = 25 °C, tp = 1 µs 10000 W
Maximum repetitive peak
(2)
avalanche voltage
Maximum single pulse
(2)
peak avalanche voltage
Storage temperature range -65 to +175 °C
stg
Maximum operating junction temperature
T
j
<
Rth(j-a)
1
dPtot
dTj
= 10 ms sinusoidal Tc = 25 °C 200 A
t
p
< 1 µs, Tj < 150 °C, IAR < 30 A 100 V
t
p
< 1 µs, Tj < 150 °C, IAR < 30 A 100 V
t
p
Tc = 150 °C
= 150 °C
T
c
(3)
Per diode
Per device
20
40
175 °C
Symbol Parameter Value Unit
R
R
Junction to case
th(j-c)
Coupling 0.20 °C/W
th(c)
per diode 1.30
total 0.75
°C/W
A
When the two diodes 1 and 2 are used simultaneously:
ΔT
(diode 1) = P(diode 1) x R
j
2/10 Doc ID 018718 Rev 1
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STPS40M80C Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
R
V
Reverse leakage current
(2)
Forward voltage drop
F
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
= 380 µs, δ < 2 %
p
= 25 °C
T
j
= 125 °C - 15 40 mA
T
j
T
= 25 °C
j
= 125 °C - 0.475 0.510
T
j
= 25 °C
T
j
= 125 °C - 0.570 0.635
T
j
= 25 °C
T
j
= 125 °C - 0.680 0.795
T
j
V
= V
R
I
= 10 A
F
I
= 20 A
F
I
= 40 A
F
RRM
-1565µA
- 0.550 0.600
- 0.655 0.735
- 0.800 0.920
To evaluate the conduction losses use the following equation:
P = 0.475 x I
Figure 2. Average forward power dissipation
versus average forward current
(per diode)
P (W)
F(AV)
22
20
18
16
14
12
10
8
6
4
2
0
T
δ = t / T
0 2 4 6 8 10121416182022242628
t
p
p
δ = 0.1
δ = 0.05
Figure 4. Normalized avalanche power
derating versus pulse duration
F(AV)
δ = 0.2
+ 0.008 x I
δ = 0.5
F2(RMS)
δ = 1
I (A)
F(AV)
Figure 3. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
I (A)
F(AV)
24
22
20
18
16
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150 175
R
th(j-a)
T (°C)
amb
= R
th(j-c)
Figure 5. Normalized avalanche power
derating versus junction
temperature
P(tp)
ARM
P (1µs)
ARM
1
P (25 °C)
1.2
1
P(T)
ARM j
ARM
V
0.1
0.01
0.001
0.10.01 1
10 100
0.8
0.6
0.4
0.2
T (°C)
t (µs)
p
1000
0
25 50 75 100 125
j
150
Doc ID 018718 Rev 1 3/10
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