ST STPS40M60C User Manual

STPS40M60C

High efficiency 60 V power Schottky rectifier

Features

■ High current capability

■ Avalanche rated

■ Low forward voltage drop

■ Low leakage current

■ High frequency operation

Description

This dual diode Schottky rectifier is suited for high frequency switch mode power supply.

Packaged in TO-220AB, I device is particularly suited for use in notebook, game station and desktop adapters, providing these applications with a good efficiency at both low and high load.

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(max) 150 °C

T

j

(typ) 385 mV

V

F

2

PAK and D2PAK, this

2 x 20 A

60 V

A1

K

A2

K

A2

K

A1

2

I

PAK

STPS40M60CR

A1

2

PAK

D

STPS40M60CG-TR

K

A2

K

A1

TO-220AB

STPS40M60CT

Figure 1. Electrical characteristics

2 x I

I

"Forward"

F(Io)

X

V

F

O

I

F

I

O

I

R

V

To

V

I

V

RRM

V

AR

R

"Reverse"

(a)

V

F(2xIo)

A2

V

I

AR

a. V

and I

ARM

operating area defined in Figure 13. V pulse measurements (t are static characteristics

must respect the reverse safe

ARM

< 1 µs). VR, IR, V

p

and IAR are

AR

and VF,

RRM

May 2011 Doc ID 018813 Rev 1 1/10

www.st.com

10

Characteristics STPS40M60C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode, at T

otherwise specified)

Symbol Parameter Value Unit

= 25 °C unless

amb

V

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

V

ARM

T

1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2. See Figure 13

3. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Repetitive peak reverse voltage 60 V

RRM

Forward rms current 30 A

Average forward current, δ = 0.5

Tc = 130 °C

= 120 °C

T

c

Per diode Per device

Surge non repetitive forward current tp = 10 ms sinusoidal 220 A

(1)

Repetitive peak avalanche power Tj = 25 °C, tp = 1 µs 23000 W

Maximum repetitive peak

(2)

avalanche voltage

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature

T

j

<

Rth(j-a)

1

dPtot

dTj

< 1 µs, Tj < 150 °C, IAR < 86.3 A 80 V

t

p

(3)

20 40

150 °C

Symbol Parameter Value Unit

R

Junction to case

th(j-c)

Coupling 0.50 °C/W

th(c)

per diode 1.40

total 0.95

°C/W

A

When the two diodes 1 and 2 are used simultaneously:

ΔT

(diode 1) = P(diode 1) x R

j

2/10 Doc ID 018813 Rev 1

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

STPS40M60C Characteristics

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 25 °C

T

(1)

I

R

V

Reverse leakage current

(2)

Forward voltage drop

F

j

= 125 °C - 85 mA

T

j

= 25 °C

T

j

T

= 125 °C - 0.325 0.355

j

= 25 °C

T

j

= 125 °C - 0.385 0.435

T

j

= 25 °C

T

j

= 125 °C - 0.475 0.535

T

j

= 25 °C

T

j

= 125 °C - 0.605 0.675

T

j

V

= 60 V

R

I

= 5A

F

I

= 10 A

F

I

= 20 A

F

I

= 40 A

F

- 25 110 µA

- 0.430 0.460

- 0.470 0.505

- 0.540 0.595

- 0.645 0.730

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

= 380 µs, δ < 2 %

p

To evaluate the conduction losses use the following equation: P = 0.395 x I

Figure 2. Average forward power dissipation

versus average forward current (per diode)

P (W)

F(AV)

16

14

12

10

8

6

4

2

0

0 2 4 6 8 101214161820222426

δ

=tp/T

T

tp

δ=0.1

δ=0.05

+ 0.007 x I

F(AV)

δ=0.2

F2(RMS)

δ=0.5

I (A)

F(AV)

Figure 3. Average forward current versus

ambient temperature (δ = 0.5, per diode)

I (A)

F(AV)

δ=1

24

22

20

18

16

14

12

10

8

6

4

2

0

0 25 50 75 100 125 150

R

th(j-a)=Rth(j-c)

T (°C)

amb

V

Doc ID 018813 Rev 1 3/10