ST STPS40M100C User Manual

STPS40M100C

Power Schottky rectifier

Features

■High current capability

■Avalanche rated

■Low forward voltage drop current

■High frequency operation

Description

This dual diode Schottky rectifier is suited for high frequency switch mode power supply.

Packaged in TO-220AB and I2PAK, this device is intended to be used in notebook, game station and desktop adaptors, providing in these applications a good efficiency at both low and high load.

Table 1.	Device summary
	Symbol		Value
	IF(AV)		2 x 20 A
	VRRM		100 V
	Tj (max)		150 °C
	VF(typ)		0.420 V

A1 (1)

K (2)

A2 (3)

K
A2	A2
A1 K	A1 K
TO220AB	I²PAK
STPS40M100CT	STPS40M100CR

Figure 1. Electrical characteristics (a)

	V	I
	I	"Forward"
	2 x IO		X
	IF
	IO		X
VRRM
VAR	VR			V
		IR
		VTo VF(Io)	VF	VF(2xIo)
	"Reverse"
		IAR

a. VARM and IARM must respect the reverse safe operating area defined in Figure 11 VAR and IAR are

pulse measurements (tp < 1 µs). VR, IR, VRRM and VF, are static characteristics

April 2010

Doc ID 15522 Rev 3

1/8

www.st.com

Characteristics	STPS40M100C

1

Characteristics

Table 2.

Absolute ratings (limiting values per diode at 25 °C unless otherwise stated)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS)

Forward current rms

60

A

IF(AV)

Average forward current δ = 0.5

Tc = 125 °C

Per diode

20

A

Tc = 120 °C

Per package

40

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

530

A

P

(1)

Repetitive peak avalanche power

t

p

= 1 µs

T = 25 °C

23 200

W

ARM

j

V

(2)

Maximum repetitive peak avalanche voltage

t

p

< 1 µs

T < 150 °C, I

AR

< 58 A

120

V

ARM

j

V

(2)

Maximum single pulse peak avalanche voltage

t

p

< 1 µs

T < 150 °C, I

AR

< 58 A

120

V

ASM

j

Tstg

Storage temperature range

-65 to + 175

°C

T

Maximum operating junction temperature (3)

150

°C

j

1.For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.Refer to Figure 11

3.

dPtot <

1

condition to avoid thermal runaway for a diode on its own heatsink

Rth(j-a)

dTj

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

1.4

°C/W

Total

0.95

Rth(c)

Coupling

0.5

°C/W

When diodes 1 and 2 are used simultaneously

Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 4.

Static electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Tj = 25 °C

VR = VRRM

-

-

70

µA

I

(1)

Reverse leakage current

Tj = 125 °C

-

15

70

mA

R

Tj = 25 °C

-

-

40

µA

VR = 70 V

Tj = 125 °C

-

7.5

40

mA

Tj = 125 °C

IF = 5 A

-

0.415

0.500

V

VF(2)

Forward voltage drop

Tj = 125 °C

IF = 10A

-

0.500

0.560

-

Tj = 25 °C

IF = 20 A

-

-

0.780

-

Tj = 125 °C

-

0.585

0.640

-

1.Pulse test: tp = 5 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.560 x IF(AV) + 0.004x IF2(RMS)

2/8	Doc ID 15522 Rev 3

STPS40M100C	Characteristics

Figure 2. Average forward power dissipation Figure 3. versus average forward current

(per diode)

Average forward current per diode versus ambient temperature

(δ = 0.5)

P

(W)

20

F(AV)

δ=0.2

δ=0.5

δ=1

18

δ=0.05

δ=0.1

16

14

12

10

8

6
4		T
2	δ=tp/T	tp
IF(AV)(A)

0

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

I	(A)
F(AV)

22			Rth(j-a)=Rth(j-c)
20
18
16
14
12
10			Rth(j-a)=15 °C/W
8
6		T
4
2	δ=tp/T	tp	Tamb(°C)
0

0

25

50

75

100

125

150

Figure 4. Normalized avalanche power	Figure 5. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

PARM(t p)						PARM(T j)
PARM(1µs)
					PARM(25°C)
1
					1.2
					1
0.1					0.8
					0.6
0.01					0.4
					0.2
			tp(µs)				Tj(°C)
0.001					0
0.01	0.1	1	10	100	25	50	75	100	125	150
					1000

Figure 6. Non repetitive surge peak forward Figure 7.	Relative variation of thermal
current versus overload duration	impedance junction to case versus
(maximum values per diode)	pulse duration

I	M	(A)					Zth(j-c)/Rth(j-c)
350						1.0
300						0.9
						0.8
250						0.7
200						0.6
					Tc=25 °C	0.5
150						0.4
					Tc=75 °C
							Single pulse
100						0.3
50		IM			Tc=125 °C	0.2
			t	t(s)		0.1			tp(s)
			δ =0.5
0						0.0
1.E-03			1.E-02	1.E-01	1.E+00	1.E-03		1.E-02	1.E-01	1.E+00

Doc ID 15522 Rev 3

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