ST STPS40M100C User Manual

STPS40M100C

Power Schottky rectifier

Features

■ High current capability

■ Avalanche rated

■ Low forward voltage drop current

■ High frequency operation

Description

This dual diode Schottky rectifier is suited for high
frequency switch mode power supply.

2

Packaged in TO-220AB and I
intended to be used in notebook, game station
and desktop adaptors, providing in these
applications a good efficiency at both low and
high load.

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(max) 150 °C

T

j

(typ) 0.420 V

V

F

PAK, this device is

2 x 20 A

100 V

A1 (1)

K (2)

A2 (3)

K

A2

K

STPS40M100CT

A1

TO220AB

STPS40M100CR

A1

I²PAK

Figure 1. Electrical characteristics

2 x I

I

"Forward"

F(Io)

X

X

V

F

O

I

F

I

O

I

R

V

V

To

V

I

V

RRM

V

V

AR

R

"Reverse"

(a)

V

F(2xIo)

A2

K

V

I

AR

a. V

ARM

and I

must respect the reverse safe

ARM

operating area defined in Figure 11 V
pulse measurements (t
are static characteristics

< 1 µs). VR, IR, V

p

and IAR are

AR

RRM

April 2010 Doc ID 15522 Rev 3 1/8

and VF,

www.st.com

8

Characteristics STPS40M100C

1 Characteristics

Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise stated)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

V

ARM

V

ASM

T

1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2. Refer to Figure 11

3. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Repetitive peak reverse voltage 100 V

RRM

Forward current rms 60 A

= 125 °C Per diode 20

T

Average forward current δ = 0.5

c

T

= 120 °C Per package 40

c

Surge non repetitive forward current tp = 10 ms sinusoidal 530 A

(1)

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 23 200 W

(2)

Maximum repetitive peak avalanche voltage tp < 1 µs Tj < 150 °C, IAR < 58 A 120 V

(2)

Maximum single pulse peak avalanche voltage tp < 1 µs Tj < 150 °C, IAR < 58 A 120 V

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

<

Rth(j-a)

1

dPtot

dTj

(3)

150 °C

Symbol Parameter Value Unit

R

R

th(j-c)

th(c)

Junction to case

Coupling 0.5 °C/W

Per diode 1.4

Total 0.95

°C/W

A

When diodes 1 and 2 are used simultaneously

T

(diode 1) = P(diode 1) x R

j

Table 4. Static electrical characteristics

(Per diode) + P(diode 2) x R

th(j-c)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Tj = 25 °C

= 125 °C - 15 70 mA

T

(1)

I

R

Reverse leakage current

j

= 25 °C

T

j

= 125 °C - 7.5 40 mA

T

j

Tj = 125 °C IF = 5 A - 0.415 0.500 V

= 125 °C IF = 10A - 0.500 0.560

T

(2)

V

Forward voltage drop

F

j

Tj = 25 °C

Tj = 125 °C - 0.585 0.640

1. Pulse test: t

2. Pulse test: t

= 5 ms, δ < 2%

p

= 380 µs, δ < 2%

p

To evaluate the conduction losses use the following equation:
P = 0.560 x I

2/8 Doc ID 15522 Rev 3

F(AV)

+ 0.004x I

F2(RMS)

V

= V

R

V

= 70 V

R

I

= 20 A

F

RRM

th(c)

--70µA

--40µA

-

--0.780

-

-

STPS40M100C Characteristics

Figure 2. Average forward power dissipation

versus average forward current
(per diode)

P

(W)

F(AV)

20

18

16

14

12

10

8

6

4

2

0

0 2 4 6 8 10 121416 182022242628

δ=0.05

δ=0.1

I()(A)

FAV

δ=0.2

δ=0.5

δ

=tp/T

δ=1

T

tp

Figure 4. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 3. Average forward current per diode

versus ambient temperature
(δ = 0.5)

I

(A)

F(AV)

22

20

18

16

14

12

10

8

6

4

2

0

0 25 50 75 100 125 150

δ

=tp/T

T

tp

R

=15 °C/W

th(j-a)

T (°C)

amb

R

th(j-a)=Rth(j-c)

Figure 5. Normalized avalanche power

derating versus junction
temperature

P(T)

ARM j

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 6. Non repetitive surge peak forward

current versus overload duration
(maximum values per diode)

I

(A)

M

350

300

250

200

150

100

I

M

50

0

1.E-03 1.E-02 1.E-01 1.E+00

t

=0.5

δ

t(s)

Figure 7. Relative variation of thermal

impedance junction to case versus
pulse duration

Z

th(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

0.6

Tc=25 °C

Tc=75 °C

Tc=125 °C

Doc ID 15522 Rev 3 3/8

0.5

0.4

Single pulse

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

tp(s)