ST STPS40L40CT, STPS40L40CW User Manual
® |
STPS40L40CT/CW |
|
|
|
|
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
IF(AV) |
2 x 20 A |
|
|
VRRM |
40 V |
|
|
Tj (max) |
150 °C |
|
|
VF (max) |
0.49 V |
FEATURES AND BENEFITS
nLOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES
nLOW DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER
nAVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and DC to DC converters.
Packaged in TO-220AB and TO-247 this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.
A1 |
|
|
K |
A2 |
|
A2 |
A2 |
K |
|
A1 |
K |
|
|
|
A1 |
TO-220AB |
TO-247 |
STPS40L40CT |
STPS40L40CW |
ABSOLUTE RATINGS (limiting values, per diode)
Symbol |
Parameter |
|
|
Value |
Unit |
|
|
|
|
|
|
VRRM |
Repetitive peak reverse voltage |
|
|
40 |
V |
|
|
|
|
|
|
IF(RMS) |
RMS forward current |
|
|
30 |
A |
|
|
|
|
|
|
IF(AV) |
Average forward current |
Tc = 130°C |
Per diode |
20 |
A |
|
|
δ = 0.5 |
Per device |
40 |
|
|
|
|
|
|
|
IFSM |
Surge non repetitive forward current |
tp = 10 ms Sinusoidal |
230 |
A |
|
|
|
|
|
|
|
IRRM |
Repetitive peak reverse current |
tp = 2 µs square F = 1kHz |
2 |
A |
|
|
|
|
|
|
|
IRSM |
Non repetitive peak reverse current |
tp = 100 µs square |
3 |
A |
|
|
|
|
|
|
|
PARM |
Repetitive peak avalanche power |
tp = 1µs Tj = 25°C |
8100 |
W |
|
|
|
|
|
|
|
Tstg |
Storage temperature range |
|
|
- 65 to + 150 |
°C |
|
|
|
|
|
|
Tj |
Maximum operating junction temperature * |
|
150 |
°C |
|
|
|
|
|
|
|
dV/dt |
Critical rate of rise of reverse voltage |
|
|
10000 |
V/µs |
|
|
|
|
|
|
* : |
dPtot |
< |
|
1 |
thermal runaway condition for a diode on its own heatsink |
|
Rth( j − a) |
||||
|
dTj |
|
|||
July 2003 - Ed: 7A |
1/5 |
||||
|
|
|
|
|
|
STPS40L40CT/CW
THERMAL RESISTANCES
Symbol |
|
Parameter |
Value |
Unit |
|
Rth (j-c) |
Junction to case |
|
Per diode |
1.5 |
°C/W |
|
|
|
Total |
0.8 |
|
Rth(c) |
|
|
Coupling |
0.1 |
°C/W |
|
|
|
|
|
|
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol |
Parameter |
Tests Conditions |
|
Min. |
|
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
|
|
IR * |
Reverse leakage current |
Tj = 25°C |
VR = VRRM |
|
|
|
0.8 |
mA |
|
|
|
Tj = 100°C |
|
|
|
|
30 |
70 |
mA |
|
|
|
|
|
|
|
|
|
|
VF * |
Forward voltage drop |
Tj = 25°C |
IF = 20 A |
|
|
|
|
0.53 |
V |
|
|
Tj = 125°C |
IF = 20 A |
|
|
|
0.42 |
0.49 |
|
|
|
Tj = 25°C |
IF = 40 A |
|
|
|
|
0.69 |
|
|
|
Tj = 125°C |
IF = 40 A |
|
|
|
0.6 |
0.7 |
|
Pulse test : * tp = 380 µs, δ < 2% |
|
|
|
|
|
|
|
|
|
To evaluate the conduction losses use the following equation : |
|
|
|
|
|
|
|||
P = 0.28 x IF(AV) + 0.0105 IF2(RMS) |
|
|
|
|
|
|
|
|
|
Fig. 1: Average forward power dissipation versus |
Fig. 2: |
Average |
current |
versus |
ambient |
||||
average forward current (per diode). |
|
temperature (δ = 0.5, per diode). |
|
|
|||||
16 |
PF(av)(W) |
|
|
|
δ = 0.2 |
|
|
|
|
|
22 |
||
14 |
|
|
|
|
δ = 0.1 |
|
δ = 0.5 |
|
|
20 |
|||
|
|
|
|
|
|
|
|
||||||
|
|
δ = 0.05 |
|
|
|
|
|
|
18 |
||||
12 |
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
16 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
10 |
|
|
|
|
|
|
|
|
|
|
|
|
14 |
8 |
|
|
|
|
|
|
|
|
|
|
|
δ = 1 |
12 |
|
|
|
|
|
|
|
|
|
|
|
|
10 |
|
6 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
T |
8 |
|
4 |
|
|
|
|
|
|
|
|
|
|
|
6 |
|
|
|
|
|
|
|
|
|
|
|
|
|
||
2 |
|
|
|
|
|
|
|
|
|
|
|
|
4 |
|
|
|
|
|
IF(av) (A) |
|
|
δ=tp/T |
tp |
2 |
|||
0 |
|
|
|
|
|
|
|
||||||
0 |
2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
18 |
20 |
22 |
0 |
|
|
24 |
||||||||||||
IF(av)(A) |
|
|
|
|
|
|
|
|
|
Rth(j-a)=Rth(j-c) |
|
|
|
|
|
|
Rth(j-a)=15°C/W |
|
|
|
|
T |
|
|
|
|
|
|
δ=tp/T |
tp |
Tamb(°C) |
|
|
|
|
|
|
|
|
||
0 |
25 |
50 |
75 |
100 |
125 |
150 |
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) |
|
|
|
|
|
PARM(1µs) |
|
|
|
|
|
1 |
|
|
|
|
|
0.1 |
|
|
|
|
|
0.01 |
|
|
|
|
|
0.001 |
|
|
tp(µs) |
|
|
|
|
|
|
|
|
0.01 |
0.1 |
1 |
10 |
100 |
1000 |
2/5 |
|
|
|
|
|
Fig. 4: Normalized avalanche power derating versus junction temperature.
|
PARM(tp) |
|
|
|
|
|
PARM(25°C) |
|
|
|
|
|
|
1.2 |
|
|
|
|
|
|
1 |
|
|
|
|
|
|
0.8 |
|
|
|
|
|
|
0.6 |
|
|
|
|
|
|
0.4 |
|
|
|
|
|
|
0.2 |
|
|
|
|
|
|
0 |
|
|
Tj(°C) |
|
|
|
|
|
|
|
|
|
|
0 |
25 |
50 |
75 |
100 |
125 |
150 |
Loading...