ST STPS40L40CT, STPS40L40CW User Manual

®

STPS40L40CT/CW

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS

I

F(AV)

V

RRM

2x20A

40 V

Tj (max) 150 °C

(max) 0.49 V

V

F

FEATURES AND BENEFITS

LOW FORWARD VOLTAGE DROP MEANING

n

VERY SMALL CONDUCTION LOSSES
LOW DYNAMIC LOSSES AS A RESULT OF

n

THE SCHOTTKY BARRIER
AVALANCHE CAPABILITY SPECIFIED

n

DESCRIPTION

Dual center tap Schottky barrier rectifier designed
for highfrequencySwitchedModePowerSupplies
and DC to DC converters.

Packaged in TO-220ABand TO-247 this device is
intended for use in low voltage, high frequency
inverters, free-wheeling and polarity protection
applications.

ABSOLUTE RATINGS (limiting values, per diode)

A1

A2

A1

TO-220AB

STPS40L40CT

K

A2

K

A2

K

A1

TO-247

STPS40L40CW

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

P

ARM

T

stg

Tj

dV/dt

dPtot

*:

Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 130°C

Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current tp=2µs square F = 1kHz
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage

<

dTj Rth j a

July 2003 - Ed: 7A

Per diode

δ = 0.5

Per device

thermal runawaycondition for a diode on its own heatsink

−1()

40 V
30 A
20

40

230 A

2A
3A

8100 W

-65 to+150 °C
150 °C

10000 V/µs

A

1/5

STPS40L40CT/CW

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-c)

Junction to case

Per diode

Total

R

th(c)

Coupling

When the diodes 1 and 2 areused simultaneously :

∆ Tj(diode 1) = P(diode1) x R

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

*

I

R

Reverse leakage current Tj = 25°CV

R=VRRM

Tj = 100°C

V

*

F

Forward voltage drop Tj = 25°CI

Tj = 125°CI
Tj=25°CI
Tj = 125°CI

=20A

F

=20A

F

=40A

F

=40A

F

Pulse test:*tp=380µs,δ<2%

To evaluate the conduction losses use the following equation :
P=0.28xI

Fig. 1: Average forward power dissipation versus
average forward current (per diode).

F(AV)

+ 0.0105 I

F2(RMS)

Fig. 2: Average current versus ambient
temperature (δ = 0.5, per diode).

1.5

°C/W

0.8

0.1 °C/W

0.8 mA

30 70 mA

0.53 V

0.42 0.49

0.69

0.6 0.7

PF(av)(W)

16
14
12

δ = 0.05

10

8
6
4
2
0

024681012141618202224

δ = 0.1

δ = 0.2

IF(av) (A)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Fig. 3: Normalized avalanche power derating
versus pulse duration.

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

IF(av)(A)

22
20
18
16
14
12
10

8
6
4
2
0

0 25 50 75 100 125 150

δ

=tp/T

T

tp

Rth(j-a)=Rth(j-c)

Rth(j-a)=15°C/W

Tamb(°C)

Fig. 4: Normalized avalanche power derating

versus junction temperature.

P(t)

ARM p

P (25°C)

ARM

1.2
1

0.8

0.6

0.4

0.2
0

0 25 50 75 100 125 150

T (°C)

j

2/5