ST STPS40L15C User Manual

Low drop OR-ing power Schottky diode

Features

■ Very low forward voltage drop for less power

dissipation and reduced heatsink size

■ Reverse voltage suited to OR-ing of 3 V, 5 V

and 12 V rails

■ Avalanche capability specified

Description

Dual center tap schottky rectifier packaged in
TO-220AB and TO-247, this device is especially
intended for use as OR-ing diode in fault tolerant
power supply equipments.

K

TO-220AB

STPS40L15CT

STPS40L15C

A1

K

A2

A2

K

A1

TO-247

STPS40L15CW

A2

K

A1

Table 1. Device summary

Symbol Value

I

2x20 A

F(AV)

V

15 V

RRM

T

125 °C

j (max)

V

F (max)

0.33 V

July 2011 Doc ID 4926 Rev 6 1/8

www.st.com

8

Characteristics STPS40L15C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

Repetitive peak reverse voltage 15 V

RRM

I

F(RMS)

I

F(AV)

I

I

I

P

T

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistances

Forward current rms 30 A

T

= 140 °C

Average forward current

Surge non repetitive forward

FSM

current

Peak repetitive reverse current tp = 2 µs, F= 1 kHz 2 A

RRM

Non repetitive peak reverse current tp = 100 µs 3 A

RSM

Repetitive peak avalanche power tp = 1µs, Tj = 25 °C 13140 W

ARM

Storage temperature range -65 to + 150 °C

stg

Maximum operating junction temperature

T

j

dPtot

--------------­dTj

1

--------------------------

<

Rth j a–()

case

δ = 1

= 10 m, Sinusoidal 310 A

t

p

(1)

Tot al 4 0

Per diode 20

125 °C

A

Symbol Parameter Value Unit

Per diode 1.6

R

Junction to case

th(j-c)

R

th (c)

Table 4. Static electrical characteristics (Per diode)

Coupling 0.1 °C/W

Total 0.85

°C/W

Symbol Parameter Tests conditions Min. Typ. Max. Unit

R

V

F

1. Pulse test : tp = 380 µs, δ < 2%

current

(1)

Forward voltage drop

Reverse leakage

(1)

I

= 25 °C

j

= 100 °C 200 500

T

j

= 25 °C IF = 19 A 0.41

T

j

T

= 25 °C IF = 40 A 0.52

j

= 125 °C IF = 19 A 0.28 0.33

T

j

T

= 125 °C IF = 40 A 0.42 0.50

j

= V

V

R

RRM

6

mA

V

T

To evaluate the conduction losses use the following equation :
P = 0.18 x I

F(AV)

+ 0.008 I

F2(RMS)

2/8 Doc ID 4926 Rev 6

STPS40L15C Characteristics

Figure 1. Average forward power dissipation

versus average forward current
(per diode)

PF(av)(W)

8

7

δ = 0.05

6

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

5

4

3

δ

=tp/T

T

tp

2

1

0

0 2 4 6 8 10121416182022

IF(av) (A)

Figure 3. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1µs)

ARM

1

Figure 2. Average forward current versus

ambient temperature
( δ

= 1, per diode)

IF(av)(A)

22
20

Rth(j-a)=Rth(j-c)

18
16
14
12

Rth(j-a)=15°C/W

10

8
6

T

4

tp

=tp/T

δ

2
0

0 25 50 75 100 125 150

Tamb(°C)

Figure 4. Normalized avalanche power

derating versus junction
temperature

P(T)

ARM j

P (25 °C)

ARM

1.2

1

0.1

0.01

t (µs)

0.001

0.10.01 1

10 100

p

1000

Figure 5. Non repetitive surge peak forward

current versus overload duration
(maximum values per diode)

IM(A)

250

200

150

100

IM

50

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=50°C

Tc=75°C

Tc=110°C

0.8

0.6

0.4

0.2

0

25 50 75 100 125

T (°C)

Figure 6. Relative variation of thermal

impedance junction to case versus
pulse duration (per diode)

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

0.4

δ = 0.2

δ = 0.1

0.2

0.0

1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0

Single pulse

tp (s)

δ

=tp/T

T

tp

j

150

Doc ID 4926 Rev 6 3/8