ST STPS40H100CW User Manual
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 175 °C
V
(max) 0.61V
F
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
n
LOW LEAKAGE CURRENT
n
GOOD TRADE OFF BETWEEN LEAKAGE
n
CURRENT AND FORWARD VOLTAGE DROP
n
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
n
2x20A
100 V
STPS40H100CW
A1
K
A2
A2
K1
A1
TO-247
DESCRIPTION
Dual center tap Schottky rectifier suited for
Switch Mode Power Supplies and high frequency DC to DC converters.
Packaged in TO-247, this device is intended for
use in high frequency inverters.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
E
Repetitive peak reverse voltage 100 V
RMS forward current 30 A
Average forward current Tc = 160°C
δ = 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10 ms sinusoidal 300 A
Repetitive peak reverse current tp=2µs F=1kHz square 1 A
Non repetitive peak reverse current tp = 100 µs square 4 A
Non repetitive avalanche energy Tj = 25°C L= 60 mH
AS
20
40
36 mJ
Ias=3A
P
ARM
T
Repetitive peak avalanche power tp = 1µs Tj = 25°C 26400 W
Storage temperature range - 65 to + 175 °C
stg
Tj Maximum operating junction temperature 175 °C
dV/dt Critical rate of rise of rise voltage 10000 V/µs
A
July 2003 - Ed: 4D
1/4
STPS40H100CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
V
F
Pulse test : * tp=5ms,δ<2%
To evaluate the maximum conduction losses use the following equation :
P=0.5xI
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Junction to case Per diode
(Per diode) + P(diode 2) x R
th(j-c)
* Reverse leakage current Tj = 25°CV
th(c)
R=VRRM
Tj = 125°C 5 15 mA
** Forward voltage drop Tj = 25°CI
Tj = 125°CI
Tj=25°CI
Tj = 125°CI
** tp = 380 µs, δ <2%
+ 0.0055 x I
F(AV)
F2(RMS)
= 20 A 0.73 V
F
= 20 A 0.58 0.61
F
= 40 A 0.85
F
= 40 A 0.67 0.72
F
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
0.9
Total
0.55
Coupling 0.1
°C/W
10 µA
PF(av)(W)
16
14
12
10
8
6
4
2
0
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
δ = 0.05
δ = 0.2
δ = 0.1
IF(av) (A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
IF(av)(A)
22
20
18
16
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
2/4
Loading...