ST STPS40H100CW User Manual

®	STPS40H100CW

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

IF(AV)	2 x 20 A
VRRM	100 V
Tj (max)	175 °C
VF (max)	0.61 V

FEATURES AND BENEFITS

nNEGLIGIBLE SWITCHING LOSSES

nLOW LEAKAGE CURRENT

nGOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP

nLOW THERMAL RESISTANCE

nAVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters.

Packaged in TO-247, this device is intended for use in high frequency inverters.

A1

K

A2

A2

K1

A1

TO-247

ABSOLUTE RATINGS (limiting values, per diode)

Symbol	Parameter				Value	Unit
VRRM	Repetitive peak reverse voltage				100	V
IF(RMS)	RMS forward current				30	A
IF(AV)	Average forward current	Tc = 160°C		Per diode	20	A
		δ = 0.5		Per device	40
IFSM	Surge non repetitive forward current	tp = 10 ms	sinusoidal		300	A
IRRM	Repetitive peak reverse current	tp = 2 µs F = 1kHz square			1	A
IRSM	Non repetitive peak reverse current	tp = 100 µs square			4	A
EAS	Non repetitive avalanche energy	Tj = 25°C	L= 60 mH		36	mJ
		Ias = 3 A
PARM	Repetitive peak avalanche power	tp = 1µs Tj = 25°C			26400	W
Tstg	Storage temperature range				- 65 to + 175	°C
Tj	Maximum operating junction temperature				175	°C
dV/dt	Critical rate of rise of rise voltage				10000	V/µs

July 2003 - Ed: 4D	1/4

STPS40H100CW

THERMAL RESISTANCES

Symbol		Parameter		Value	Unit
Rth (j-c)	Junction to case		Per diode	0.9	°C/W
			Total	0.55
Rth (c)			Coupling	0.1
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS

Symbol	Parameter	Tests Conditions		Min.	Typ.	Max.	Unit
IR *	Reverse leakage current	Tj = 25°C	VR = VRRM			10	µA
		Tj = 125°C			5	15	mA
VF **	Forward voltage drop	Tj = 25°C	IF = 20 A			0.73	V
		Tj = 125°C	IF = 20 A		0.58	0.61
		Tj = 25°C	IF = 40 A			0.85
		Tj = 125°C	IF = 40 A		0.67	0.72

Pulse test : * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = 0.5 x IF(AV) + 0.0055 x IF2(RMS)

Fig. 1: Average forward power dissipation versus average forward current (per diode).

Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode).

PF(av)(W)
16							δ = 0.5			22
14										20
				δ = 0.2						18
12
			δ = 0.1						δ = 1	16
10										14
		δ = 0.05
										12
8
										10
6
									T	8
4										6
2										4
				IF(av) (A)				δ=tp/T	tp	2
0
	2.5	5.0	7.5	10.0	12.5	15.0	17.5	20.0	22.5	0
0.0										25.0

IF(av)(A)
			Rth(j-a)=Rth(j-c)
			Rth(j-a)=15°C/W
	T
	δ=tp/T	tp	Tamb(°C)
0	25	50	75	100	125	150	175

Fig. 3: Normalized avalanche power derating versus pulse duration.

PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001			tp(µs)
0.01	0.1	1	10	100	1000
2/4

Fig. 4: Normalized avalanche power derating versus junction temperature.

	PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0			Tj(°C)
0	25	50	75	100	125	150