ST STPS40H100CW User Manual

®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
RRM
Tj (max) 175 °C
V
(max) 0.61V
F
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
n
LOW LEAKAGE CURRENT
n
GOOD TRADE OFF BETWEEN LEAKAGE
n
CURRENT AND FORWARD VOLTAGE DROP
n
LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED
n
2x20A
100 V
STPS40H100CW
A1
K
A2
A2
K1
A1
TO-247
DESCRIPTION
Dual center tap Schottky rectifier suited for Switch Mode Power Supplies and high fre­quency DC to DC converters.
Packaged in TO-247, this device is intended for use in high frequency inverters.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
E
Repetitive peak reverse voltage 100 V RMS forward current 30 A Average forward current Tc = 160°C
δ = 0.5
Per diode
Per device Surge non repetitive forward current tp = 10 ms sinusoidal 300 A Repetitive peak reverse current tp=2µs F=1kHz square 1 A Non repetitive peak reverse current tp = 100 µs square 4 A Non repetitive avalanche energy Tj = 25°C L= 60 mH
AS
20 40
36 mJ
Ias=3A
P
ARM
T
Repetitive peak avalanche power tp = 1µs Tj = 25°C 26400 W Storage temperature range - 65 to + 175 °C
stg
Tj Maximum operating junction temperature 175 °C
dV/dt Critical rate of rise of rise voltage 10000 V/µs
A
July 2003 - Ed: 4D
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STPS40H100CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
V
F
Pulse test : * tp=5ms,δ<2%
To evaluate the maximum conduction losses use the following equation : P=0.5xI
Fig. 1: Average forward power dissipation versus average forward current (per diode).
Junction to case Per diode
(Per diode) + P(diode 2) x R
th(j-c)
* Reverse leakage current Tj = 25°CV
th(c)
R=VRRM
Tj = 125°C 5 15 mA
** Forward voltage drop Tj = 25°CI
Tj = 125°CI Tj=25°CI Tj = 125°CI
** tp = 380 µs, δ <2%
+ 0.0055 x I
F(AV)
F2(RMS)
= 20 A 0.73 V
F
= 20 A 0.58 0.61
F
= 40 A 0.85
F
= 40 A 0.67 0.72
F
Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode).
0.9
Total
0.55
Coupling 0.1
°C/W
10 µA
PF(av)(W)
16 14 12 10
8 6 4 2 0
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0
δ = 0.05
δ = 0.2
δ = 0.1
IF(av) (A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
IF(av)(A)
22 20 18 16 14 12 10
8 6 4 2 0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2 1
0.8
0.6
0.4
0.2 0
0 25 50 75 100 125 150
T (°C)
j
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STPS40H100CW
Fig. 5: Non repetitivesurgepeakforwardcurrentver-
sus overload duration (maximum values, per diode).
IM(A)
400 350 300 250 200 150 100
IM
50
0 1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=50°C
Tc=100°C
Tc=150°C
Fig. 7: Reverse leakage current versus reverse voltage applied (maximum values, per diode).
IR(mA)
1E+1
1E+0
1E-1
Tj=125°C
Tj=100°C
Tj=75°C
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
0.0 1E-3 1E-2 1E-1 1E+0
tp(s)
δ
=tp/T
T
tp
Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(nF)
3.0
1.0
F=1MHz Tj=25°C
1E-2
1E-3
1E-4
0 102030405060708090100
Tj=25°C
VR(V)
Fig. 9: Forward voltage drop versus forward
current (per diode).
IFM(A)
200 100
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Tj=125°C
Typical values
Tj=125°C
Maximum values
Maximum values
VFM(V)
Tj=25°C
0.1
VR(V)
1 2 5 10 20 50 100
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STPS40H100CW
PACKAGE MECHANICAL DATA
TO-247
V
V
H
L5
L
F2
F4
L1
F3
L3
F1
V2
F(x3)
G
= =
Dia.
L4L2
D
ME
A
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133
G 10.90 0.429
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216
M 2.00 3.00 0.078 0.118 V5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
n
Cooling method: C
n
Recommended torque value: 0.8 N.m.
n
Maximum torque value: 1 N.m.
Ordering type Marking Package Weight Base qty Delivery mode
STPS40H100CW STPS40H100CW TO-247 4.36g 30 Tube
n
Epoxy meets UL94,V0
Informationfurnished isbelievedto beaccurate and reliable.However, STMicroelectronics assumesno responsibility forthe consequences of useof suchinformation nor forany infringement ofpatents orotherrights ofthird parties whichmay result fromits use.No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval ofSTMicroelectronics.
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